Download FDS8672S N-Channel PowerTrench SyncFET

FDS8672S
®
N-Channel PowerTrench SyncFET
tm
™
30V, 18A, 4.8mΩ
Features
General Description
„ Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30V
MOSFET is designed to maximize power conversion efficiency,
providing a low rDS(on) and low gate charge. The FDS8672S
includes a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s monolithic
SyncFET technology.
„ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A
„ Includes SyncFET Schottky body diode
„ High performance trench technology for extremely low rDS(on)
and fast switching
Application
„ High power and current handling capability
„ Synchronous Rectifier for DC/DC Converters
„ 100% Rg (Gate Resistance) tested
„ Notebook Vcore low side switch
„ Termination is Lead-free and RoHS Compliant
„ Point of load low side switch
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Ratings
30
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous
18
ID
Parameter
-Pulsed
80
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 3)
216
Power Dissipation
TA = 25°C
(Note 1a)
2.5
Power Dissipation
TA = 25°C
(Note 1b)
1.0
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS8672S
Device
FDS8672S
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
Package
SO8
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
December 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 10mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
500
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3.0
V
33
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1mA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10mA, referenced to 25°C
-5
VGS = 10V, ID = 18A
3.8
4.8
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 15A
5.3
7.0
VGS = 10V, ID = 18A, TJ = 125°C
5.3
7.8
VDS = 5V, ID = 18A
78
gFS
Forward Transconductance
1.0
2.1
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
2005
2670
pF
985
1310
pF
135
205
pF
0.6
2.0
Ω
12
22
ns
4
10
ns
26
42
ns
3
10
ns
29
41
nC
15
21
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15V, ID = 18A,
VGS = 10V, RGEN = 6Ω
VDD = 15V,
ID = 18A
5.5
nC
3.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 18A
0.8
1.2
VGS = 0V, IS = 1.8A
0.4
0.7
27
43
ns
31
50
nC
IF = 18A, di/dt = 300A/µs
V
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b) 125°C/W when mounted on a
minimum pad.
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 12A, VDD = 30V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
2
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
ID, DRAIN CURRENT (A)
VGS = 3.5V
60
VGS = 10V
VGS = 4.5V
40
VGS = 4V
VGS = 3V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
VGS = 3V
3.0
2.5
VGS = 3.5V
VGS = 4V
2.0
1.5
VGS = 4.5V
1.0
VGS = 10V
0.5
3
0
20
40
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
15
ID = 18A
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID = 18A
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
12
9
TJ = 125oC
6
TJ = 25oC
3
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
80
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
60
VDD = 5V
40
TJ = 125oC
20
TJ = 25oC
0
60
0
1
2
TJ = -55oC
3
VGS = 0V
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
4
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
3
1.2
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
Typical Characteristics TJ = 25°C unless otherwise noted
5000
ID = 18A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 10V
VDD = 15V
6
VDD = 20V
4
Crss
2
100
5
10
15
20
25
f = 1MHz
VGS = 0V
60
0.1
0
0
Coss
1000
30
1
Figure 7. Gate Charge Characteristics
20
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
30
Figure 8. Capacitance vs Drain
to Source Voltage
30
10
TJ = 25oC
TJ = 125oC
15
VGS = 10V
10
VGS = 4.5V
5
o
RθJA = 50 C/W
1
0.01
0.1
1
10
100
0
25
500
50
tAV, TIME IN AVALANCHE(ms)
100
125
150
o
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
P(PK), PEAK TRANSIENT POWER (W)
3000
100
1ms
10
1
75
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
1s
SINGLE PULSE
TJ = MAX RATED
0.1
10s
RθJA = 125oC/W
DC
TA = 25oC
0.01
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
10
1
0.5
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
VGS = 10V
1000
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.001
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.0001
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
5
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
Typical Characteristics TJ = 25°C unless otherwise noted
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
Schottky barrier diodes exhibit significant leakage at high
parallel with PowerTrench MoSFET. This diode exhibits similar
temperature and high reverse voltage. This will increase the
characteristics to a discrete external Schottky diode in parallel
power in the device.
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDS8672S.
CURRENT: 0.8A/Div
IDSS, REVERSE LEAKAGE CURRENT (A)
-2
TIME: 12.5nS/Div
10
TJ = 125oC
-3
10
TJ = 100oC
-4
10
-5
10
TJ = 25oC
-6
10
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. FDS8672S SyncFET Body Diode
Reverse Recovery Characteristics
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
Figure 15. SyncFET Body Diode Reverse
Leakage vs Drain to Source Voltage
6
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
Typical Characteristics TJ = 25°C unless otherwise noted
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
2.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
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A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I32
©2007 Fairchild Semiconductor Corporation
FDS8672S Rev.D2
7
www.fairchildsemi.com
FDS8672S N-Channel PowerTrench® SyncFET™
TRADEMARKS