Download SMBT2907A/MMBT2907A 2 3 1

SMBT2907A/MMBT2907A
PNP Silicon Switching Transistor
• Low collector-emitter saturation voltage
2
3
• Complementary type:
1
SMBT2222A / MMBT2222A (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BDTIC
Type
Marking
SMBT2907A/MMBT2907A s2F
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
60
Collector-base voltage
VCBO
60
Emitter-base voltage
VEBO
5
Collector current
IC
600
Base current
IB
100
Peak base current
IBM
200
Total power dissipation
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
V
mA
TS ≤ 77 °C
-65 ... 150
Value
≤ 220
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 60
Unit
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
60
-
-
V(BR)EBO
5
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
BDTIC
Collector-base cutoff current
µA
ICBO
VCB = 50 V, IE = 0
-
-
0.01
VCB = 50 V, IE = 0 , TA = 150 °C
-
-
10
-
-
10
Emitter-base cutoff current
IEBO
nA
VEB = 5 V, IC = 0
DC current gain1)
-
hFE
IC = 100 µA, VCE = 10 V
75
-
-
IC = 1 mA, VCE = 10 V
100
-
-
IC = 10 mA, VCE = 10 V
100
-
-
IC = 150 mA, VCE = 10 V
100
-
300
IC = 500 mA, VCE = 10 V
50
-
-
Collector-emitter saturation voltage1)
V
VCEsat
IC = 150 mA, IB = 15 mA
-
-
0.4
IC = 500 mA, IB = 50 mA
-
-
1.6
IC = 150 mA, IB = 15 mA
-
-
1.3
IC = 500 mA, IB = 50 mA
-
-
2.6
Base emitter saturation voltage-1)
1Puls
VBEsat
test: t ≤ 300µs, D = 2%
2
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
200
-
-
MHz
Ccb
-
-
8
pF
Ceb
-
-
30
AC Characteristics
Transition frequency
fT
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
BDTIC
Delay time
td
-
-
10
tr
-
-
40
tstg
-
-
80
tf
-
-
30
ns
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
Storage time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
Fall time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
3
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
Test circuit
Delay and rise time
-30 V
Input
Z 0 = 50 Ω
t r < 2ns
200 Ω
Osc.
t r < 5 ns
BDTIC
0
-16 V
1 kΩ
50 Ω
200 ns
EHN00053
Storage and fall time
-30 V
+15 V
Input
Z 0 = 50 Ω
t r < 2 ns
0
-30 V
1 kΩ
1 kΩ
200 Ω
Osc.
t r < 5 ns
50 Ω
200 ns
EHN00069
Oscillograph: R > 100, C < 12pF, t r < 5ns
4
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 3
Saturation voltage IC = ƒ(VBEsat ; VCEsat)
hFE = 10
SMBT 2907/A
EHP00754
SMBT 2907/A
10 3
EHP00750
mA
h FE
ΙC
5
V CE
10 2
150 ˚C
V BE
5
25 ˚C
BDTIC
10
2
10 1
-50 ˚C
5
5
10 0
5
10 1
-1
10
10
0
10
1
2
10
ΙC
mA 10 3
0.4
0.6
0.8
1.0
V
1.2
1.6
Emitter-base capacitance Ceb = ƒ(VEB)
SMBT 2907/A
EHP00749
30
pF
26
5
10
0.2
Collector-base capacitance Ccb = ƒ(VCB)
CCB0(CEB0)
fT
0
VBE sat , VCE sat
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 3
MHz
10 -2
10 -1
2
24
22
20
18
16
14
12
5
CEB
10
8
6
4
10
1
10 0
5
10 1
5
10 2 mA 5
2
0
10 3
CCB
4
8
12
ΙC
16
V
22
VCB0(VEB0
5
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
Collector-base capacitance CCB = ƒ (VCB)
Total power dissipation P tot = ƒ(TS)
f = 1MHz
10 2
pF
Ccb
SMBT 2907/A
EHP00747
360
mW
5
300
Ptot
270
240
210
BDTIC
10
1
180
150
5
120
90
60
30
10
0
10 -1
5
10 0
5
10 1
5
V
0
0
10 2
15
30
45
60
75
90 105 120
VCB
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
10 3
SMBT 2907/A
Ptot max
5
Ptot DC
EHP00748
tp
D=
T
°C 150
TS
10 3
SMBT 2907/A
ns
tp
t r, t d
T
10 2
10 1
VBE = 0 V, VCC = 10 V,
VBE = 20 V, VCC = 30 V
5
tr
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
EHP00751
10 2
td
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 1
0
10
10 0
5 10 1
5 10 2 mA 5 10 3
ΙC
tp
6
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
Storage time tstg = ƒ(IC)
10 3
t stg
Fall time tf = ƒ(IC)
SMBT 2907/A
EHP00752
10 3
ns
tf
5
SMBT 2907/A
EHP00753
ns
VCC = 30 V
5
h FE = 20
h FE = 10
BDTIC
10 2
5
10 2
h FE = 10
5
h FE = 20
10 1
0
10
5 10
1
5 10
2
mA 5 10
10 1
0
10
3
5 10 1
5 10 2 mA 5 10 3
ΙC
ΙC
7
www.BDTIC.com/infineon
2011-09-30
Package SOT23
SMBT2907A/MMBT2907A
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
BDTIC
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
8
www.BDTIC.com/infineon
2011-09-30
SMBT2907A/MMBT2907A
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
9
www.BDTIC.com/infineon
2011-09-30