Download BFR360F

BFR360F
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier for low current applications
• Collector design supports 5 V supply voltage
2
3
1
• For oscillators up to 3.5 GHz
• Low noise figure 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
BDTIC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR360F
Marking
FBs
Pin Configuration
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
6
Collector-emitter voltage
VCES
15
Collector-base voltage
VCBO
15
Emitter-base voltage
VEBO
2
Collector current
IC
35
Base current
IB
4
Total power dissipation1)
Ptot
210
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
V
mA
TS ≤ 98°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1T
S is
2For
Value
Unit
250
K/W
measured on the collector lead at the soldering point to the pcb
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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2013-11-06
BFR360F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
6
9
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-emitter cutoff current
nA
ICES
VCE = 4 V, VBE = 0
-
1
30
VCE = 10 V, VBE = 0, TA = 85°C
-
2
50
ICBO
-
1
30
IEBO
-
1
500
hFE
90
120
160
BDTIC
Verified by random sampling
Collector-base cutoff current
VCB = 4 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 15 mA, VCE = 3 V, pulse measured
2
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2013-11-06
BFR360F
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
11
14
-
Ccb
-
0.32
0.5
Cce
-
0.2
-
Ceb
-
0.4
-
NFmin
-
1
-
IC = 15 mA, VCE = 3 V, ZS = ZSopt, Z L = ZLopt,
f = 1.8 GHz
-
15.5
-
f = 3 GHz
-
11
-
AC Characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 15 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
BDTIC
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
IC = 3 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum available1)
Gma
|S21e|2
Transducer gain
dB
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
-
13
-
f = 3 GHz
-
9
-
IP3
-
24
-
P-1dB
-
9
-
Third order intercept point at output2)
dBm
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
1dB compression point at output
IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
1G
1/2
ma = |S21e / S12e| (k-(k²-1) )
2IP3 value depends on termination
of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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2013-11-06
BFR360F
Total power dissipation P tot = ƒ(TS)
Collector-base capacitance Ccb = ƒ(VCB )
f = 1MHz
240
0.8
mW
pF
0.6
Ccb
Ptot
180
150
0.5
120
0.4
90
0.3
60
0.2
30
0.1
BDTIC
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
2
4
6
8
10
12
TS
V
16
VCB
Third order Intercept Point IP3=ƒ(IC)
Transition frequency fT= ƒ(IC)
(Output, ZS=ZL=50Ω)
f = 1GHz
VCE = parameter, f = 1.8GHz
VCE = parameter
30
17
GHz
dBm
14
5V
20
12
fT
IP 3
3V
15
10
2V
8
10
6V
4V
3V
2V
1V
5
1V
6
4
0
-5
0
0.7V
2
5
10
15
20
25
30
mA
0
0
40
5
10
15
20
IC
25
30
mA
40
IC
4
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2013-11-06
BFR360F
Power gain Gma, Gms = ƒ(IC )
Power gain Gma, Gms = ƒ(IC)
f = 0.9GHz
f = 1.8GHz
VCE = parameter
VCE = parameter
18
24
dB
5V
dB
22
5V
3V
21
2V
3V
G
G
20
19
14
2V
18
BDTIC
1V
17
12
1V
16
15
0.7V
10
14
0.7V
13
12
0
5
10
15
20
25
30
mA
8
0
40
5
10
15
20
25
30
IC
40
IC
Power Gain Gma, Gms = ƒ(f)
Insertion Power Gain |S21|² = ƒ(f)
VCE = parameter
VCE = parameter
49
36
dB
dB
Ic = 15mA
34
24
Ic = 15mA
5V
2V
1V
0.7V
G
28
G
39
29
20
24
16
19
12
9
5V
2V
1V
0.7V
4
0
0.5
14
mA
8
4
1
1.5
2
2.5
3
3.5 GHz
0
0
4.5
0.5
1
1.5
2
2.5
f
3
3.5 GHz
4.5
f
5
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2013-11-06
BFR360F
Power Gain Gma, Gms = ƒ(VCE ): 
Power gain Gma, Gms = ƒ (IC)
|S21|² = ƒ(VCE): - - - -
VCE = 3V
f = parameter
f = parameter
24
dB
22
dB
Ic = 15mA
0.9GHz
0.9GHz
19
0.9GHz
18
17
18
G
G
20
1.8GHz
16
15
16
1.8GHz
BDTIC
14
1.8GHz
14
13
2.4GHz
12
11
12
3GHz
10
9
10
4GHz
8
8
0
1
2
3
4
5
V
7
0
7
5
10
15
20
25
VCE
30
35 mA
45
IC
Noise figure NF = ƒ (IC )
VCE = 3V, f = 1,8 GHz
Noise figure F = ƒ(f)
VCE = 3V, ZS = ZSopt
3
dB
F50
2.4
2.2
NFmin
F
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35 mA
45
IC
6
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2013-11-06
BFR360F
Source impedance for min.
noise figure vs. frequency
VCE = 3 V
+j50
+j25
+j100
+j10
2.4GHz
1.8GHz
3GHz
0
10
25
50
0.9GHz
100
BDTIC
4GHz
3mA
15mA
-j10
-j25
-j100
-j50
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2013-11-06
Package TSFP-3
BFR360F
BDTIC
8
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2013-11-06
BFR360F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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