Download 2 3 1 BF799W

BF799W
NPN Silicon RF Transistor
• For linear broadband amplifier
application up to 500 MHz
3
• SAW filter driver in TV tuners
2
1
• Pb-free (RoHS compliant) package
BDTIC
Type
Marking
BF799W
LKs
Pin Configuration
1=B
2=E
Package
3=C
SOT323
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
20
Collector-emitter voltage
VCES
30
Collector-base voltage
VCBO
30
Emitter-base voltage
VEBO
3
Collector current
IC
35
Base current
IB
10
Total power dissipation
Ptot
280
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
mA
TS = 107 °C
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
≤ 155
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
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2011-09-21
BF799W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
20
-
-
V(BR)CBO
30
-
-
V(BR)EBO
3
-
-
DC characteristics
Collector-emitter breakdown voltage
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
BDTIC
Collector-base cutoff current
ICBO
-
-
100
nA
VCB = 20 V, IE = 0
DC current gain
hFE
-
IC = 5 mA, VCE = 10 V
35
95
-
IC = 20 mA, VCE = 10 V
40
100
250
VCEsat
-
0.1
0.3
VBEsat
-
-
0.95
Collector-emitter saturation voltage
V
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
AC characteristics
MHz
fT
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
-
800
-
IC = 20 mA, VCE = 8 V, f = 100 MHz
-
1100
-
Cob
-
0.96
-
Ccb
-
0.7
-
Cce
-
0.28
-
F
-
3
-
dB
g22e
-
60
-
µS
Output capacitance
pF
VCB = 10 V, IE = 0 mA, f = 1 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Noise figure
IC = 5 mA, VCE = 10 V, f = 100 MHz,
ZS = 50 Ω
Output conductance
IC = 20 mA, VCE = 10 V, f = 35 MHz
2
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2011-09-21
BF799W
Total power dissipation P tot = f (TS )
300
mW
240
Ptot
220
200
180
BDTIC
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (t p)
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 2
Ptotmax / PtotDC
10 3
RthJS
K/W
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
10
-6
10
-5
10
-4
tp
10
-3
10
-2
s
10
0
tp
3
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2011-09-21
BF799W
Transition frequency fT = f (IC)
Collector-base capacitance Ccb = f (VCB )
f = 100MHz
f = 1 MHz
1200
fT
BF 799
EHT07116
1.5
MHz
Ccb
1000
BF 799
EHT07117
pF
VCE = 5 V
1.0
800
BDTIC
600
2V
0.5
400
200
0
0
10
20
30
0
40 mA 50
0
10
ΙC
V
20
VCB
4
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2011-09-21
Package SOT323
BF799W
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
BDTIC
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
5
www.BDTIC.com/infineon
2011-09-21
BF799W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
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2011-09-21