Download CJZM718 DFNWB3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS
CJZM718
DFNWB3×2-8L-G
PNP Transistor and N-ch MOSFET
DESCRIPTIONS
The CJZM718 is Integrated a 20V N-ch MOSFET with low
on-state resistance, and an independently connected PNP transistor
with low collector-to-emitter saturation voltage. This device is
suitable for use in charging circuit and other power management.
BDTIC
FEATURES
 High DC current gain
 Low Threshold
 Small package DFNWB3x2-8L-G
 Including a CJP718 transistor and a CJ1012 MOSFET independently in a package
APPLICATIONS
 Charging circuit
 Other power management in portable equipments
MARKING:
front
back
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
-25
V
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-7.5
V
Collector Current
-3
A
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±6
V
ID
Drain Current -Continuous
0.5
A
IDM
Drain Current - Pulse
2
A
1
W
Thermal Resistance from Junction to Ambient (note1)
175
℃/W
Thermal Resistance from Junction to Ambient (note2)
110
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
IC
N-MOSFET
Power Dissipation, Temperature and Thermal Resistance
PD
RθJA
Power Dissipation
www.BDTIC.com/jcst
A,Nov,2013
TL
Lead Temperature
℃
260
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
*
Test
conditions
Min
Typ
Max
Unit
IC=-0.1mA, IE=0
-25
V
IC=-10mA, IB=0
-25
V
-7.5
V
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA, IC=0
Collector cut-off current
ICBO
VCB=-20V, IE=0
-25
nA
Emitter cut-off current
IEBO
VEB=-6V, IC=0
-25
nA
-30
mV
hFE *
DC current gain
VCE=-2V, IC=-0.01A
300
VCE=-2V, IC=-0.1A
300
VCE=-2V, IC=-2A
150
VCE=-2V, IC=-6A
15
IC=-0.1A, IB=-10mA
BDTIC
Collector-emitter saturation voltage
*
VCE(sat)
IC=-1A, IB=-20mA
-220
mV
IC=-1.5A, IB=-50mA
-250
mV
IC=-2.5A, IB=-150mA
-350
mV
IC=-3.5A, IB=-350mA
-380
mV
VBE(sat)
*
IC=-3.5A, IB=-350mA
-1.075
V
Base-emitter voltage
VBE(on)
*
VCE=-2V, IC=-3.5A
-0.95
V
Transition frequency
fT
Base-emitter saturation voltage
VCE=-10V, IC=-50mA, f=100MHz
150
MHz
N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=250µA
Zero gate voltage drain current
IDSS
VDS =16V, VGS = 0V
0.1
µA
Gate-body leakage current
IGSS
VGS =±4.5V, VDS = 0V
±1
µA
Gate threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.2
V
Drain-source on-resistance
RDS(on)
VGS =4.5V, ID =0.6A
0.7
Ω
VGS =2.5V, ID =0.5A
0.85
Ω
Forward tranconductance
gfs
Diode forward voltage
VSD
VDS =10V, ID =0.4A
*
20
0.45
0.5
IS=0.15A, VGS = 0V
1.2
V
S
V
DYNAMIC PARAMETERS (note 3)
Input Capacitance
Ciss
100
pF
Output Capacitance
Coss
16
pF
Reverse Transfer Capacitance
Crss
12
pF
td(on)
5
ns
VDD=10V, VGEN=4.5V, RG=10Ω,
5
ns
RL=47Ω, ID=0.2A
25
ns
11
ns
750
nC
75
nC
225
nC
VDS =16V, VGS =0V, f =1MHz
SWITCHING PARAMETERS (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
tr
td(off)
tf
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =10V, VGS =4.5V,
ID =0.25A
Note:
1. When mounted on a minimum pad.
2
2. When mounted on 1 in of 2oz copper board.
3. These parameters have no way to verify.
* Pulse test: pulse width≤300μs, duty cycle≤ 2%
www.BDTIC.com/jcst
A,Nov,2013
Typical Characteristics
CJZM718
PNP Transistor
3000
-0.30
-810uA
(A)
VCE= -2V
COMMON
EMITTER
Ta=25℃
-900uA
1000
IC
-0.25
DC CURRENT GAIN
-630uA
-540uA
-0.20
o
Ta=100 C
hFE
-720uA
COLLECTOR CURRENT
IC
hFE ——
Static Characteristic
-0.35
-450uA
-0.15
-360uA
-270uA
-0.10
o
Ta=25 C
100
-180uA
-0.05
IB=-90uA
BDTIC
-0.00
-0
-1
-2
-3
-4
-5
COLLECTOR-EMITTER VOLTAGE
10
-0.01
-6
-0.1
(V)
VCE
IC —— VBE
VBEsat ——
IC
(A)
IC
-1.4
-6
-6
-1
COLLECTOR CURRENT
β=10
VCE=-2V
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
-1.2
COLLECTOR CURRENT
IC (A)
-1
o
-0.1
Ta=100 C
o
Ta=25 C
-1.0
Ta=25℃
-0.8
-0.6
-0.01
Ta=100℃
-0.4
-1E-3
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
BASE-EMITTER VOLTAGE
VCEsat ——
-1.2
-0.2
-1E-3
-1.4
VBE(V)
-0.1
-1
COLLECTOR CURRENT
IC
VCEsat ——
-3
-3
IC
-6
(A)
IC
β=50
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-0.01
-0.1
β=50
-0.01
β=10
-1
Ta=100℃
-0.1
Ta=25℃
Ta=25℃
-1E-3
-1E-3
-0.01
-0.1
COLLECTOR CURRENT
-1
IC
(A)
-6
-0.01
-1E-3
-0.01
-0.1
COLLECTOR CURRENT
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-1
IC
(A)
-6
fT
300
——
Cob / Cib
IC
VCB / VEB
——
1000
o
Ta=25 C
250
(pF)
Cib
C
200
CAPACITANCE
TRANSITION FREQUENCY
fT
(MHz)
f=1MHz
IE=0 / IC=0
150
100
50
100
Cob
VCE=-10V
BDTIC
o
Ta=25 C
0
-0
-20
-40
-60
COLLECTOR CURRENT
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
1.2
——
-80
IC
-100
(mA)
10
-0.1
-1
REVERSE BIAS VOLTAGE
Ta
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
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-10
V
(V)
Typical Characteristics
CJZM718
MOSFET
Output Characteristics
5
Transfer Characteristics
500
Ta=25℃
5.5V
VDS=16V
Pulsed
Pulsed
4.5V
4
400
(mA)
ID
3
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
3.5V
2.5V
2
1
300
Ta=100℃
200
Ta=25℃
100
VGS=1.5V
BDTIC
0
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
600
2.5
VDS
0
0.0
3.0
0.5
1.0
(V)
1.5
2.0
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
500
——
2.5
VGS
3.0
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
450
300
RDS(ON)
RDS(ON)
400
ON-RESISTANCE
(mΩ)
(mΩ)
500
200
ON-RESISTANCE
VGS=2.5V
VGS=4.5V
350
ID=0.6A
300
250
100
0
100
200
200
300
400
500
DRAIN CURRENT
500
400
600
ID
700
0
800
2
4
6
8
GATE TO SOURCE VOLTAGE
(mA)
IS —— VSD
VGS
10
(V)
Threshold Voltage
1.00
Ta=25℃
Pulsed
0.95
VTH
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (mA)
(V)
100
10
1
0.90
ID=250uA
0.85
0.80
0.75
0.1
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
1.0
VSD (V)
1.2
0.70
25
50
75
JUNCTION TEMPERATURE
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100
TJ
(℃ )
125