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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
SOT-523
DAN222
SWITCHING DIODE
FEATURES:
z
z
z
z
Four types of packaging are available
High speed
Suitable for high packing density layout
High reliability
1
3
2
BDTIC
MARKING: N
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Unit
Peak reverse voltage
VRM
80
V
DC reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Power dissipation
PD
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
V(BR)
IR= 100μA
Reverse voltage leakage current
IR
VR=70V
0.1
μA
Forward voltage
VF
IF=100mA
1.2
V
Diode capacitance
CD
VR=0, f=1MHz
3.5
pF
Reverse recovery time
trr
VR=6V, IF=IR=5mA
4
ns
Reverse breakdown voltage
www.BDTIC.com/jcst
80
Unit
V
Typical Characteristics
Forward
Characteristics
DAN222
Reverse
10000
300
Characteristics
T=
a 2
5℃
REVERSE CURRENT IR
10
T=
a 1
00
℃
FORWARD CURRENT
IF
(nA)
(mA)
100
1
0.1
0.0
Ta=100℃
1000
100
Ta=25℃
10
1
0.4
0.8
1.2
FORWARD VOLTAGE
VF
1.6
0
20
(V)
40
REVERSE VOLTAGE
60
VR
80
(V)
BDTIC
Power Derating Curve
Capacitance Characteristics
1.6
200
(mW)
f=1MHz
150
PD
1.4
1.2
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
1.0
0.8
0.6
100
50
0
0
4
8
12
REVERSE VOLTAGE
16
VR
(V)
20
0
25
50
75
100
AMBIENT TEMPERATURE
www.BDTIC.com/jcst
125
Ta
(℃)
150
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