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Transcript 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
SOT-323
DAP202U
SWITCHING DIODE
FEATURES:
z
z
z
z
Four types of packaging are available
High speed
Suitable for high packing density layout
High reliability
1
3
2
BDTIC
M
MARKING:P
Maximum Ratings @Ta=25 ℃
Parameter
Symbol
Limit
Unit
Peak reverse voltage
VRM
80
V
DC reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
℃
Tstg
-55~+150
Storage temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
Test
V(BR)
IR= 100μA
conditions
Min
Max
80
Unit
V
Reverse voltage leakage current
IR
VR=70V
0.1
μA
Forward voltage
VF
IF=100mA
1.2
V
Diode capacitance
CD
VR=6V, f=1MHz
3.5
pF
Reverse recovery time
trr
VR=6V, IF=5mA
4
ns
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Typical Characteristics
Forward
100
Characteristics
DAP202U
Reverse
1000
Pulsed
(nA)
(mA)
REVERSE CURRENT IR
T=
a 2
5℃
T=
a 1
00
℃
IF
FORWARD CURRENT
10
1
0.1
0.2
Characteristics
Pulsed
Ta=100℃
100
10
Ta=25℃
1
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
0
20
(V)
40
REVERSE VOLTAGE
60
VR
80
(V)
BDTIC
Capacitance Characteristics
1.4
Power Derating Curve
250
Ta=25℃
(mW)
200
PD
1.3
150
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
1.2
1.1
1.0
100
50
0
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
150
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