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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
DAN217
SWITCHING DIODE
SOT-23
FEATURES
z
Small surface mounting type
z
Two diode elements are connected in series
1
MARKING: BA1
3
2
BDTIC
Maximum Ratings @Ta=25 ℃
Parameter
Symbol
Unit
Limit
Peak reverse voltage
VRM
80
V
DC reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
1
A
Power dissipation
PD
200
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
V(BR)
IR= 100μA
Reversen voltage leakage current
IR
VR=70V
0.1
μA
Forward voltage
VF
IF=100mA
1.2
V
Reverse breakdown voltage
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80
V
Typical Characteristics
Forward
100
Characteristics
Characteristics
300
(nA)
(mA)
Ta
=2
5℃
3
REVERSE CURRENT IR
10
Ta
=1
00
℃
IF
Reverse
1000
30
FORWARD CURRENT
DAN217
1
Ta=100℃
100
30
Ta=25℃
10
3
0.3
0.1
0.0
1
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
1.2
0
20
(V)
40
REVERSE VOLTAGE
60
VR
80
(V)
BDTIC
Capacitance Characteristics
1.6
Power Derating Curve
300
Ta=25℃
f=1MHz
(mW)
PD
1.4
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
1.2
200
150
100
50
1.0
0
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃)
150
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