Download FQA90N15 / FQA90N15_F109 N-Channel MOSFET Absolute Maximum Ratings

FQA90N15 / FQA90N15_F109
N-Channel QFET MOSFET
150 V, 90 A, 18 mΩ
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• 90 A, 150 V, RDS(on) = 18 mΩ (Max)@VGS = 10 V, ID = 45 A
• Low Gate Charge (typical 220 nC)
• Low Crss (typical 200 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
G
TO-3PN
FQA Series
G DS
S
Absolute Maximum Ratings
Symbol
Parameter
FQA90N15_F109
Unit
VDSS
Drain-Source Voltage
150
V
ID
Drain Current
- Continuous (TC = 25°C)
90
A
IDM
Drain Current
- Pulsed
- Continuous (TC = 100°C)
63.5
A
(Note 1)
360
A
± 25
V
1400
mJ
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
90
A
EAR
Repetitive Avalanche Energy
(Note 1)
37.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Derate above 25°C
6.0
V/ns
375
W
2.5
W/°C
-55 to +175
°C
300
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
1
Typ
Max
--
0.4
Unit
°C/W
0.24
--
°C/W
--
40
°C/W
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
March 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA90N15
FQA90N15_F109
TO-3PN
--
--
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Unit
150
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, Referenced to 25°C
--
0.15
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
--
--
1
µA
VDS = 120 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 45 A
gFS
Forward Transconductance
VDS = 40 V, ID = 45 A
(Note 4)
--
0.014
0.018
Ω
--
68
--
S
--
6700
8700
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1400
1800
pF
--
200
260
pF
--
105
220
ns
--
760
1500
ns
--
470
950
ns
--
410
830
ns
--
220
285
nC
--
43
--
nC
--
110
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDD = 75 V, ID = 90A,
RG = 25 Ω
(Note 4, 5)
VDS = 120 V, ID = 90A,
VGS = 10 V
(Note 4, 5)
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
90
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
360
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 90 A
--
--
1.5
V
trr
Reverse Recovery Time
--
175
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 90 A,
dIF / dt = 100 A/µs
--
0.97
--
µC
(Note 4)
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS =90A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 90A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
2
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
Package Marking and Ordering Information
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
ID, Drain Current [A]
2
10
ID , Drain Current [A]
2
10
1
10
1
10
175℃
25℃
-55℃
0
10
※ Notes :
1. VDS = 30V
2. 250µ s Pulse Test
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR , Reverse Drain Current [A]
RDS(on) [Ω],
Drain-Source On-Resistance
0.12
0.09
VGS = 10V
0.06
VGS = 20V
0.03
2
10
1
10
0
10
175℃ 25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0.00
-1
10
0
50
100
150
200
250
300
0.0
0.4
0.8
Figure 5. Capacitance Characteristics
18000
Ciss
Coss
9000
2.0
2.4
12
VGS, Gate-Source Voltage [V]
Capacitance [pF]
12000
1.6
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
15000
1.2
VSD , Source-Drain Voltage [V]
ID , Drain Current [A]
6000
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
3000
VDS = 30V
10
VDS = 75V
VDS = 120V
8
6
4
2
※ Note : ID = 90 A
0
-1
10
0
10
0
1
10
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
0
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 45 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
Operation in This Area
is Limited by R DS(on)
3
10
10
DC
ID, Drain Current [A]
ID, Drain Current [A]
80
10 µs
100 µs
2
1 ms
10 ms
1
10
※ Notes :
0
10
60
40
20
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
75
100
125
150
175
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Zθ JC(t), Thermal Response
Figure 11. Transient Thermal Response Curve
D = 0 .5
10
-1
※ N o te s :
1 . Z θ J C ( t) = 0 .4 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
0 .0 5
PDM
0 .0 2
10
0 .0 1
-2
10
-5
t1
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
4
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
5
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
6
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
7
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2000 Fairchild Semiconductor Corporation
FQA90N15 / FQA90N15_F109 Rev. C0
8
www.fairchildsemi.com
www.BDTIC.com/FAIRCHILD
FQA90N15 / FQA90N15_F109 N-Channel MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FPS™
Sync-Lock™
2Cool™
®
F-PFS™
AccuPower™
®*
®
®
®
FRFET
PowerTrench
AX-CAP *
SM
BitSiC™
Global Power Resource
PowerXS™
TinyBoost™
Green Bridge™
Build it Now™
Programmable Active Droop™
TinyBuck™
Green FPS™
CorePLUS™
QFET®
TinyCalc™
Green FPS™ e-Series™
QS™
CorePOWER™
TinyLogic®
CROSSVOLT™
Gmax™
Quiet Series™
TINYOPTO™
CTL™
GTO™
RapidConfigure™
TinyPower™
Current Transfer Logic™
IntelliMAX™
™
TinyPWM™
®
DEUXPEED
ISOPLANAR™
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK®
and Better™
SignalWise™
TriFault Detect™
EfficentMax™
MegaBuck™
SmartMax™
TRUECURRENT®*
ESBC™
MICROCOUPLER™
SMART START™
μSerDes™
MicroFET™
Solutions for Your Success™
®
MicroPak™
SPM®
STEALTH™
MicroPak2™
Fairchild®
UHC®
SuperFET®
MillerDrive™
Fairchild Semiconductor®
Ultra
FRFET™
SuperSOT™-3
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-6
mWSaver™
FACT®
VCX™
SuperSOT™-8
OptoHiT™
FAST®
VisualMax™
SupreMOS®
OPTOLOGIC®
FastvCore™
VoltagePlus™
OPTOPLANAR®
SyncFET™
FETBench™
XS™