Download RM75TC-M,-H,-24,-2H

MITSUBISHI DIODE MODULES
RM75TC-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM75TC-M,-H,-24,-2H
DC output current .................... 150A
Repetitive peak reverse voltage
.......... 400/800/1200/1600V
• 3 phase bridge
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
No
t
fo
R
r N ec
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De me
sig nd
n
• IO
• VRRM
APPLICATION
AC motor controllers, DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
23
23
14
Dimensions in mm
14
14
32
66
20
N
P
N
16
16
30
50
74
4–φ4.5
31
5–M6
6.5
78
90
20
P
Feb.1999
MITSUBISHI DIODE MODULES
RM75TC-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Voltage class
M
H
24
2H
Unit
Repetitive peak reverse voltage
400
800
1200
1600
V
VRSM
Non-repetitive peak reverse voltage
480
960
1350
1700
V
Ea
Recommended AC input voltage
110
220
370
440
V
No
t
fo
R
r N ec
ew om
De me
sig nd
n
VRRM
Symbol
Conditions
Ratings
Unit
IO
DC output current
Three-phase full wave rectifying circuit, TC=99°C
150
A
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
1500
A
I2t
I2t for fusing
Value for one cycle of surge current
9.4 × 103
A2s
f
Maximum operating frequency
1000
Hz
Tj
Junction temperature
–40~+150
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
Parameter
Charged part to case
Main terminal screw M6
—
Mounting torque
Mounting screw M4
—
Typical value
Weight
2500
V
1.96~2.94
N·m
20~30
kg·cm
0.98~1.47
N·m
10~15
kg·cm
405
g
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Test conditions
Parameter
Min.
Typ.
Max.
Unit
IRRM
Repetitive reverse current
Tj=150°C, VRRM applied
—
—
15
VFM
Forward voltage
Tj=25°C, IFM=150A, instantaneous meas.
—
—
1.3
V
Rth (j-c)
Thermal resistance
Junction to case
—
—
0.13
°C/ W
Rth (c-f)
Contact thermal resistance
Case to fin, conductive grease applied
—
—
0.04
°C/ W
Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
MΩ
—
mA
Feb.1999
MITSUBISHI DIODE MODULES
RM75TC-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10 4
7
5
3
2
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
1400
SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
FORWARD CURRENT (A)
No
t
fo
R
r N ec
ew om
De me
sig nd
n
1600
Tj=25°C
1200
10 3
7
5
3
2
1000
10 2
7
5
3
2
10 1
0.8
800
600
400
200
1.2
1.6
2.0
2.4
0
2.8
1
2 3 4 5 7 10
20 30
50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10 0 2 3 5 7 10 1
0.16
MAXIMUM POWER DISSIPATION
400
RESISTIVE, INDUCTIVE LOAD
350
0.14
POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE
(°C/W)
FORWARD VOLTAGE (V)
0.12
0.10
0.08
0.06
0.04
300
250
200
150
100
50
0.02
0
10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0
TIME (s)
0
0
20
40
60
80 100 120 140 160
DC OUTPUT CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. DC OUTPUT CURRENT
160
RESISTIVE, INDUCTIVE LOAD
CASE TEMPERATURE (°C)
150
140
130
120
110
100
90
80
0
20
40
60
80 100 120 140 160
DC OUTPUT CURRENT (A)
Feb.1999