Download RM75TPM-M,-H,-24,-2H

MITSUBISHI DIODE MODULES
RM75TPM-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM75TPM-M,-H,-24,-2H
IO
VRRM
DC output current ..................... 150A
Repetitive peak reverse voltage
............ 400/800/1200/1600V
3 phase bridge
Insulated Type
UL Recognized
Yellow Card No. E80276
File No. E80271
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APPLICATION
AC motor controllers , DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
80
20
20
MOUNTING
2–φ5.5 HOLES
3
~
~
11.5 10.5
40
~
~~~
+
-
+
30
68 ±0.25
5–M5 NUTS
-
CIRCUIT DIAGRAM
LABEL
8
+1.5
24.1 -0.5
10
Feb. 2009
MITSUBISHI DIODE MODULES
RM75TPM-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
M
H
24
2H
Repetitive peak reverse voltage
400
800
1200
1600
VRSM
Non-repetitive peak reverse voltage
480
V
960
1350
1700
V
Ea
Recommended AC input voltage
110
220
370
440
Vrms
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VRRM
Symbol
Conditions
Ratings
Unit
IO
DC output current
Three-phase full wave rectifying circuit, TC=99°C
150
A
IFSM
Surge (non-repetitive) forward current
One half cycle at 60Hz, peak value
1500
A
I2t
I2t for fusing
Value for one cycle of surge current
9380
A2s
f
Maximum operating frequency
1000
Hz
Tj
Junction temperature
–40~+150
°C
Tstg
Storage temperature
–40~+125
°C
Viso
Isolation voltage
2500
Vrms
Main terminal M5 screw
1.47~1.96
N·m
Mounting M5 screw
1.47~1.96
N·m
200
g
Parameter
—
Mounting torque
—
Weight
Charged part to base plate, f=60Hz, AC 1 minute
Typical value
ELECTRICAL AND THERMAL RESISTANCE CHARACTERISTICS
Symbol
Conditions
Parameter
Limits
Min.
Typ.
Max.
Unit
IRRM
Repetitive reverse current
Tj=150°C, VRRM applied
—
—
15
VFM
Forward voltage
Tj=25°C, IFM=150A, instantaneous meas.
—
—
1.3
V
Rth (j-c)
Thermal resistance
Junction to case
—
—
0.13
K/ W
Rth (c-f)
Contact thermal resistance
Case to heat sink, conductive grease applied
—
—
0.06
K/ W
Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
MΩ
—
mA
Feb. 2009
2
MITSUBISHI DIODE MODULES
RM75TPM-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVE
MAXIMUM FORWARD CHARACTERISTICS
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
104
7 Tj = 25°C
5
3
2
SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
FORWARD CURRENT (A)
No
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1600
103
7
5
3
2
102
7
5
3
2
101
0.8
1.2
1.6
2.0
2.4
1400
1200
1000
800
600
400
200
0
100
2.8
2 3 4 5 7 10
20 30 50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
MAXIMUM POWER DISSIPATION
0.14
350
POWER DISSIPATION (W)
400
TRANSIENT THERMAL IMPEDANCE
(K/W)
100 2 3 5 7 101
0.16
0.12
0.10
0.08
0.06
0.04
0.02
300
250
200
150
100
50
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
0
TIME (s)
0
20
40
60
80 100 120 140 160
DC OUTPUT CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. DC OUTPUT CURRENT
CASE TEMPERATURE (°C)
160
150
140
130
120
110
100
90
80
0
20
40
60
80 100 120 140 160
DC OUTPUT CURRENT (A)
Feb. 2009
3