Download ZXMS6005DT8 Product Summary Features and Benefits

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ZXMS6005DT8
ADVANCE INFORMATION
60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET® MOSFET
Product Summary
Features and Benefits

Continuos drain source voltage
60V

Compact Dual Package


On-state resistance
Nominal load current (VIN = 5V)
200m
1.8A

Low Input Current

Logic Level Input (3.3V and 5V)

Clamping Energy
210mJ

Short Circuit Protection with Auto Restart

Over Voltage Protection (active clamp)
Description

Thermal Shutdown with Auto Restart

Over-Current Protection
The ZXMS6005DT8 is a dual self protected low side MOSFET with

Input Protection (ESD)
logic level input. It integrates over-temperature, over-current, over-

High Continuous Current Rating
voltage (active clamp) and ESD protected logic level functionality. The

Lead-Free Finish; RoHS compliant (Note 1 & 2)
ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V

Halogen and Antimony Free. “Green” Device (Note 3)
or 5V microcontrollers in harsh environments where standard

Qualified to AEC-Q101 Standards for High Reliability
MOSFETs are not rugged enough.
Mechanical Data
Applications

Lamp Driver

Motor Driver

Relay Driver

Solenoid Driver


Case: SM-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
SM-8

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish

Weight: 0.117 grams (approximate)
D1
D2
IN1
1
IN1
D1
S1
D1
IN2
D2
S2
D2
IN2
S1
Top View
S2
Top view
Pin-Out
Device Symbol
Ordering Information (Note 4)
Product
ZXMS6005DT8TA
Notes:
Marking
ZXMS6005D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Pin 1
ZXMS
6005D
ZXMS6005D = Product Type Marking Code
Top View
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ADVANCE INFORMATION
ZXMS6005DT8
Functional Block Diagram
Application Information

Two completely isolated independent channels

Especially suited for loads with a high in-rush current such as lamps and motors.

All types of resistive, inductive and capacitive loads in switching applications.

μC compatible power switch for 12V DC applications.

Automotive rated.

Replaces electromechanical relays and discrete circuits.

Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation.
The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the
protection circuitry. This does not compromise the product’s ability to self-protect at low VDS.
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ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Continuous Drain-Source Voltage
Drain-Source Voltage For Short Circuit Protection
Continuous Input Voltage
Continuous Input Current @ -0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
Pulsed Drain Current @VIN = 3.3V ( Note 7)
Pulsed Drain Current @VIN = 5V ( Note 7)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
TJ = +25C, ID = 0.5A, VDD = 24V
Electrostatic Discharge (Human Body Model)
Charged Device Model
Symbol
VDS
VDS(SC)
VIN
Units
V
V
V
IDM
IDM
IS
ISM
Value
60
24
-0.5 ... +6
No limit
│IIN │≤2
5
6
2.5
10
EAS
210
mJ
VESD
VCDM
4000
1000
V
V
IIN
mA
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25C (Notes 5 & 8)
Linear Derating Factor
Power Dissipation at TA = +25C (Notes 5 & 9)
Linear Derating Factor
Power Dissipation at TA = +25C (Notes 6 & 8)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Notes 5 & 8)
Thermal Resistance, Junction to Ambient (Notes 5 & 9)
Thermal Resistance, Junction to Case (Notes 6 & 8)
Thermal Resistance, Junction to Case (Note 10)
Operating Temperature Range
Storage Temperature Range
Notes:
Symbol
PD
PD
PD
RθJA
RθJA
RθJC
RθJC
TJ
TSTG
Value
1.16
9.28
1.67
13.3
2.13
17
108
75
58.7
26.5
-40 to +150
-55 to +150
Units
W
mW/C
W
mW/C
W
mW/C
C/W
C/W
C/W
C/W
C
C
5. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions.
6. For a dual device surface mounted on FR4 PCB measured at t≤ 10sec
7. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient thermal
impedance graph.
8. For a dual device with one active die.
9. For a dual device with 2 active die running at equal power.
10. Thermal resistance from junction to the mounting surface of the drain pin.
Recommended Operating Conditions
The ZXMS6005DT8 is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low Level Input Voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
VIN
TA
VIH
VIL
VP
Min
0
-40
3
0
0
Max
5.5
125
5.5
0.7
24
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Unit
V
°C
V
V
V
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ID Drain Current (A)
Limited
Limited by Over-Current Protection
10 by RDS(on)
1ms
1
DC
100m
10m
1s
Single Pulse
Tamb=25°C
100ms
25X25X1.6mm FR4 10ms
Single 1oz Cu
One active die
Limit of s/c protection
1
10
Max Power Dissipation (W)
Thermal Characteristics
1.6
1.4
2 active die
1.2
1.0
0.8
0.6
0.4
1 active die
0.2
0.0
0
25
VDS Drain-Source Voltage (V)
100
80
25X25X1.6mm FR4
Single 1oz Cu
One active die
Tamb=25°C
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
75
100
125
150
Derating Curve
Maximum Power (W)
120
50
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
ZXMS6005DT8
1k
25X25X1.6mm FR4
Single 1oz Cu
One active die
Single Pulse
T amb=25°C
100
10
1
100µ
Pulse Width (s)
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Static Characteristics
Drain-Source Clamp Voltage
Symbol
Min
Typ
Max
Unit
VDS(AZ)
60
—
—
0.7
—
—
—
—
—
1.4
1.6
1.7
1.8
2.2
3.3
65
—
—
1
60
120
—
170
150
—
—
—
—
5
7
70
1
2
1.5
100
200
300
250
200
—
—
—
—
—
—
V
td(on)
tr
td(off)
ff
—
—
—
—
6
14
34
19
—
—
—
—
µs
µs
µs
µs
TJT
ff
150
—
175
10
—
—
C
C
Off State Drain Current
IDSS
Input Threshold Voltage
VIN(th)
Input Current
IIN
Input Current while Over Temperature Active
—
Static Drain-Source On-State Resistance
RDS(on)
Continuous Drain Current (Notes 5 & 9)
ID
Continuous Drain Current (Notes 5 & 8)
Current Limit (Note 11)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 12)
Thermal Hysteresis (Note 12)
Notes:
ID(LIM)
µA
V
µA
µA
m
A
A
Test Condition
ID = 10mA
VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
VDS = VGS, ID = 1mA
VIN = +3V
VIN = +5V
VIN = +5V
VIN = +3V, ID = 1A
VIN = +5V, ID = 1A
VIN = 3V; TA = +25C
VIN = 5V; TA = +25C
VIN = 3V; TA = +25C
VIN = 5V; TA = +25C
VIN = +3V
VIN = +5V
VDD = 12V, ID = 1A, VGS = 5V
—
—
11. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the
fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated
outside saturation makes current limit unnecessary.
12. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
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ZXMS6005DT8
4.5V
5V
8
7
4V
6
3.5V
3V
5
2.5V
4
3
2V
2
VIN
1
0
120
T A = 25°C
IIN Input Current (A)
ID Drain Current (A)
9
1.5V
0
1
2
3
4
5
6
7
8
80
60
40
20
0
1
2
3
4
5
VIN Input Voltage (V)
Input Current vs Input Voltage
Typical Output Characteristic
1.4
ID = 1A
0.4
T J = 150°C
0.2
T J = 25°C
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VTH Threshold Voltage (V)
RDS(on) On-Resistance ()
100
0
9 10 11 12
VDS Drain-Source Voltage (V)
VIN = VDS
1.3
ID = 1mA
1.2
1.1
1.0
0.9
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ Junction Temperature (°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
0.40
10
0.35
0.30
VIN = 3V
0.25
0.20
0.15
VIN = 5V
0.10
0.05
0.00
-75 -50 -25
0
25
50
75 100 125 150
IS Source Curent (A)
RDS(on) On-Resistance ()
ADVANCE INFORMATION
Typical Characteristics
T J=150°C
1
T J=25°C
0.1
0.01
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
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Drain-Source Voltage (V)
Drain-Source Voltage (V)
12
ID=1A
10
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
ID=1A
VDS
10
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (s)
Time (s)
Switching Speed
Switching Speed
ID Drain Current (A)
ADVANCE INFORMATION
Typical Characteristics – (cont.)
VIN = 5V
8
VDS = 15V
RD = 0
6
4
2
0
0
5
10
15
Time (ms)
Typical Short Circuit Protection
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ZXMS6005DT8
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
SM-8
Dim Min Max
Typ
A
1.7


A1
0.02
0.1

b
0.7


c
0.24 0.32

D
6.3
6.7

e
1.53


e1
4.59


E
6.7
7.3

E1
3.3
3.7

L
0.9


All Dimensions in mm
A
E1
A1
b
D
e
15°
e1
Pin #1
45°
c
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y (8x)
Dimensions
C
C1
X
Y
Y1
C1
Y1
X (8x)
Value (in mm)
1.52
4.6
0.95
2.80
6.80
C
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ZXMS6005DT8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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