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Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description Features The AS358/358A consist of two independent, high gain and internally frequency compensated operational amplifiers, they are specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. Typical applications include transducer amplifiers, DC gain blocks and most conventional operational amplifier circuits. · The AS358/358A series are compatible with industry standard 358. AS358A has more stringent input offset voltage than AS358. · The AS358 is available in DIP-8, TDIP-8, SOIC-8, TSSOP-8 and MSOP-8 packages, AS358A is available in DIP-8 and SOIC-8 packages. Applications SOIC-8 · · · · · · · · · Internally Frequency Compensated for Unity Gain Large Voltage Gain: 100dB (Typical) Low Input Bias Current: 20nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current: 0.5mA (Typical) Wide Power Supply Voltage: Single Supply: 3V to 36V Dual Supplies: ± 1.5V to ± 18V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: 0V to VCC -1.5V Battery Charger Cordless Telephone Switching Power Supply TDIP-8 DIP-8 TSSOP-8 AS358/358A MSOP-8 Figure 1. Package Types of AS358/358A Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 1 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Pin Configuration M/G/MM Package P/PT Package (SOIC-8/TSSOP-8/MSOP-8) (DIP-8/TDIP-8) OUTPUT 1 1 8 VCC OUTPUT 2 INPUT 1- 2 7 OUTPUT 2 6 INPUT 2- INPUT 1+ 3 6 INPUT 2- 5 INPUT 2+ GND 4 5 INPUT 2+ OUTPUT 1 1 8 VCC INPUT 1- 2 7 INPUT 1+ 3 GND 4 Figure 2. Pin Configuration of AS358/358A (Top View) Functional Block Diagram VCC 6μA 4μA 100μA Q5 Q6 Q2 - Q3 Cc Q7 Q4 Q1 Rsc INPUTS OUTPUT + Q11 Q10 Q8 Q9 Q13 Q12 50μA Figure 3. Functional Block Diagram of AS358/358A (Each Amplifier) Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 2 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Ordering Information - AS358 E1: Lead Free G1: Green Circuit Type TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 PT: TDIP-8 G: TSSOP-8 MM: MSOP-8 Blank: AS358 A: AS358A Package SOIC-8 DIP-8 TDIP-8 TSSOP-8 MSOP-8 Temperature Range -40 to 85oC -40 to 85oC -40 to Part Number Lead Free Marking ID Green Lead Free Green Packing Type AS358M-E1 AS358M-G1 AS358M-E1 AS358M-G1 Tube AS358MTR-E1 AS358MTR-G1 AS358M-E1 AS358M-G1 Tape & Reel AS358AM-E1 AS358AM-G1 AS358AM-E1 AS358AM-G1 Tube AS358AMTR-E1 AS358AMTR-G1 AS358AM-E1 AS358AM-G1 Tape & Reel AS358P-E1 AS358P-G1 AS358P-E1 AS358P-G1 Tube AS358AP-E1 AS358AP-G1 AS358AP-E1 AS358AP-G1 Tube AS358PT-G1 Tube AS358PT-G1 85oC oC AS358GTR-E1 AS358GTR-G1 EG3A GG3A Tape & Reel oC AS358MMTR-E1 AS358MMTR-G1 AS358MM-E1 AS358MM-G1 Tape & Reel -40 to 85 -40 to 85 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 3 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Absolute Maximum Ratings (Note 1) Parameter Symbol VCC Value Unit 40 V Differential Input Voltage VID 40 V Input Voltage VIC Power Supply Voltage -0.3 to 40 DIP-8 SOIC-8 TSSOP-8 MSOP-8 V 830 550 500 470 Power Dissipation (TA=25oC) PD Operating Junction Temperature TJ 150 oC TSTG -65 to 150 oC TLEAD 260 oC Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) mW Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Operating Temperature Range Symbol Min Max VCC 3 36 V TA -40 85 oC Jan. 2013 Rev. 2. 2 Unit BCD Semiconductor Manufacturing Limited 4 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Electrical Characteristics Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless otherwise specified. Parameter Symbol VIO Input Offset Voltage Average Temperature Coefficient of Input Offset Voltage Test Conditions VO=1.4V, RS=0Ω, VCC=5V to 30V Min AS358 IIO IIN+ - IIN-, VCM=0V Input Common Mode Voltage Range (Note 3) VIR VCC=30V Supply Current ICC TA=-40 to 85oC, RL=∞, VCC=30V Large Signal Voltage Gain GV Power Ratio Mode Supply Rejection Rejection Channel Separation Source VCC=5V to 30V CS f=1kHz to 20kHz ISC Thermal Resistance (Junction to Case) nA V VCC -1.5 0.7 2 0.5 1.2 mA 100 dB 70 dB 100 dB -120 VIN+=0V, VIN-=1V, VCC=15V, VO=2V 20 40 10 mA 15 mA 5 12 μA 50 40 VCC=5V, RL= 10kΩ dB 20 VCC=15V VCC=30V, RL=10kΩ θJC 30 60 VOH VOL nA 80 70 VCC=30V, RL=2kΩ Output Voltage Swing 200 60 VIN+=0V,VIN-=1V,VCC=15V, VO=0.2V Output Short Circuit Current to Ground 85 60 ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V ISINK μV/oC 100 VCC=15V, VO=1V to 11V, RL ≥ 2kΩ PSRR Output Current Sink 5 RL=∞, VCC=5V DC, VCM=0V to (VCC-1.5)V mV 200 0 CMRR Unit 5 20 Input Offset Current 85oC, 3 7 IIN+ or IIN-, VCM=0V Common Ratio 5 2 ΔVIO/ΔT TA=-40 to 85oC TA=-40 to Max 2 7 AS358A IBIAS Input Bias Current Typ 60 mA 26 26 27 V 28 27 5 20 30 DIP-8 53 SOIC-8 78 mV oC/W Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 5 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Electrical Characteristics (Continued) Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or both inputs can go to +36V without damages, independent of the magnitude of the VCC. Typical Performance Characteristics 15 20 18 Input Current (nA) Input Voltage (+VDC) 16 10 NEGATIVE POSITIVE 5 14 12 10 8 6 4 2 0 0 5 10 0 15 -25 0 Power Supply Voltage (+VDC) 25 50 75 100 125 o Temperature ( C) Figure 4. Input Voltage Range Figure 5. Input Current 120 1.0 0.9 105 0.7 Voltage Gain (dB) Supply Current (mA) 0.8 0.6 0.5 0.4 0.3 RL=2KΩ RL=20KΩ 90 75 0.2 0.1 0.0 60 0 5 10 15 20 25 30 35 40 Supply Voltage (V) 0 8 16 24 32 40 Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 6 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Performance Characteristics (Continued) 4 120 Output Voltage (V) 110 100 90 Voltage Gain (dB) 80 70 2 1 0 60 Input Voltage (V) 50 40 30 20 10 0 3 1 10 100 1k 10k 100k 3 2 1 0 0 1M 4 8 Frequency (Hz) 12 16 20 24 28 32 36 40 Time (μs) Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response 20 800 15 600 Output Swing (V) Output Voltage (mV) 700 500 400 300 200 10 5 100 0 4 8 12 16 0 1k 20 Time (μs) 10k 100k 1M Frequency (Hz) Figure 10. Voltage Follower Pulse Response Figure 11. Large Signal Frequency Response (Small Signal) Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 7 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Performance Characteristics (Continued) 10 7 6 Output Voltage (V) Output Voltage Referenced to Vcc (V) 8 5 4 3 1 VCC=5V VCC=15V 0.1 2 1 0 0.1 1 10 0.01 1E-3 100 0.01 0.1 1 10 100 Output Sink Current (mA) Output Source Current (mA) Figure 12. Output Characteristics: Current Sourcing Figure 13. Output Characteristics: Current Sinking 100 90 Output Current (mA) 80 70 60 50 40 30 20 10 0 -25 0 25 50 75 100 125 o Temperature ( C) Figure 14. Current Limiting Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 8 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Application R1 Opto Isolator R6 - VCC 1/2 AS358/A AC Line + SMPS Battery Pack GND R7 R3 R4 R5 VCC 1/2 AS358/A + GND - Current R2 Sense AZ431 R8 Figure 15. Battery Charger R1 910K R1 100k +V1 R2 100K R3 91K VCC +V2 1/2 AS358/A R3 100k VO + VIN(+) + R2 100k +V4 Figure 16. Power Amplifier 1/2 AS358/A VO - R6 100k +V3 RL R5 100k R4 100k Figure 17. DC Summing Amplifier Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 9 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Application (Continued) VCC R2 1M R1 100k C1 0.1μF - CO VO 1/2 AS358/A RB 6.2k + CIN R3 1M AC + 2V - RL 10k R1 2K R2 1/2 AS358/A R4 100k VCC C2 10μF + 2V - R3 2K R5 100k I1 + R4 3K AV=1+R2/R1 I2 1mA AV=11 (As shown) Figure 19. Fixed Current Sources Figure 18. AC Coupled Non-Inverting Amplifier R1 1M C1 0.01μF 0.001μF R2 100k R1 16K - R2 16k + VIN 1/2 AS358/A C2 0.01μF VO 1/2 AS358/A - + R3 100k VO R5 100k VCC VO R3 100k 0 R4 100k fO fO=1kHz Q=1 AV=2 R4 100k Figure 21. DC Coupled Low-Pass Active Filter Figure 20. Pulse Generator Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 10 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 5° 6° 2.540(0.100) TYP 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 11 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) TDIP-8 1.500(0.059) 1.700(0.067) Unit: mm(inch) 0.500(0.020)MIN 0.600(0.024) 0.800(0.031) 3.300(0.130)MAX 7.570(0.298) 8.200(0.323) 3.100(0.122) 3.500(0.138) 0.940(0.037) 1.040(0.041) 0.390(0.015) 0.550(0.022) 8.200(0.323) 9.400(0.370) 1.470(0.058) 1.670(0.066) 2.540(0.100) BCS 9.150(0.360) 9.350(0.368) 6.250(0.246) 6.450(0.254) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 12 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1° 5° R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 13 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) SEE DETAIL A 2.900(0.114) 3.100(0.122) 0.050(0.002) 0.150(0.006) 0.090(0.004) 0.200(0.008) 1.200(0.047) MAX 0.800(0.031) 1.050(0.041) 12 ° TOP & BOTTOM GAGE PLANE TYP 6.400(0.252) 4.500(0.177) R0.090(0.004) 0° 8° 0.650(0.026) TYP 0.400(0.016) 4.300(0.169) R0.090(0.004) 0.450(0.018) 0.750(0.030) SEATING PLANE 0.190(0.007) 0.300(0.012) 1.000(0.039) REF 0.250(0.010) TYP 1.950(0.077) TYP DETAIL A Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 14 www.BDTIC.com/DIODES Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) MSOP-8 Unit: mm(inch) 0.300(0.012)TYP P 0.150(0.006)TY 2.900(0.114) 3.100(0.122) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0.650(0.026)TYP 0° 6° 0.760(0.030) 0.970(0.038) 0.200(0.008) 2.900(0.114) 3.100(0.122) 0.000(0.000) 0.800(0.031) 1.200(0.047) ` Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 15 www.BDTIC.com/DIODES BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT IMPORTANT NOTICE NOTICE BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifiBCD cations herein. herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any cations particular purpose, nor nor does does BCD BCD Semiconductor particular purpose, Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of circuits. BCD of any any its its products products or or circuits. BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights of of others. others. other rights rights nor nor the the rights MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788 www.BDTIC.com/DIODES