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NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ZTX849
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
Base-Emitter
Turn-On Voltage
VBE(on)
MIN.
Static Forward
Current Transfer
Ratio
hFE
Transition Frequency
fT
100
MHz
IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
75
pF
VCB=10V, f=1MHz*
Switching Times
ton
toff
45
630
ns
ns
IC=1A, IB!=100mA
IB2=100mA, VCC=10V
100
100
100
30
TYP.
MAX.
UNIT
CONDITIONS.
850
950
mV
IC=5A, VCE=1V*
200
200
170
65
IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=5A, VCE=1V*
IC=20A, VCE=1V*
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
Thermal Resistance: Junction to Ambient
Junction to Case
ZTX849
ISSUE 2 – MARCH 94
FEATURES
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltages
APPLICATIONS
* LCD backlight converter
* Flash gun converters
* Battery powered circuits
* Motor drivers
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
6
V
A
Peak Pulse Current
ICM
20
Continuous Collector Current
IC
5
A
Practical Power Dissipation*
Ptotp
1.58
W
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1.2
W
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
4.0
3.0
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Ca
se
2.0
te
m
pe
ra
tu
re
Amb
ient te
mpe
ratu
1.0
-40 -20
0
20 40
re
60 80 100 120 140 160 180 200
D.C.
150
t1
100
D=t1/tP
tP
D=0.6
50
D=0.2
D=0.1
0
0.0001
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
80
120
V
IC=100µA
Collector-Emitter Breakdown
Voltag
V(BR)CER
80
120
V
IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown
Voltage
V(BR)CEO
30
40
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
6
8
V
IE=100µA
Collector Cut-Off Current
ICBO
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1KΩ
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
Emitter Cut-Off Current
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
25
50
110
180
50
100
200
220
mV
mV
mV
mV
IC=0.5A, IB=20mA*
IC=1A, IB=20mA*
IC=2A, IB=20mA*
IC=5A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
930
1050
mV
IC=5A, IB=200mA*
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-292
PARAMETER
MAX.
www.BDTIC.com/DIODES
3-291
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ZTX849
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
Base-Emitter
Turn-On Voltage
VBE(on)
MIN.
Static Forward
Current Transfer
Ratio
hFE
Transition Frequency
fT
100
MHz
IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
75
pF
VCB=10V, f=1MHz*
Switching Times
ton
toff
45
630
ns
ns
IC=1A, IB!=100mA
IB2=100mA, VCC=10V
100
100
100
30
TYP.
MAX.
UNIT
CONDITIONS.
850
950
mV
IC=5A, VCE=1V*
200
200
170
65
IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=5A, VCE=1V*
IC=20A, VCE=1V*
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
Thermal Resistance: Junction to Ambient
Junction to Case
ZTX849
ISSUE 2 – MARCH 94
FEATURES
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltages
APPLICATIONS
* LCD backlight converter
* Flash gun converters
* Battery powered circuits
* Motor drivers
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
6
V
A
Peak Pulse Current
ICM
20
Continuous Collector Current
IC
5
A
Practical Power Dissipation*
Ptotp
1.58
W
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
1.2
W
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
4.0
3.0
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Ca
se
2.0
te
m
pe
ra
tu
re
Amb
ient te
mpe
ratu
1.0
-40 -20
0
20 40
re
60 80 100 120 140 160 180 200
D.C.
150
t1
100
D=t1/tP
tP
D=0.6
50
D=0.2
D=0.1
0
0.0001
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
80
120
V
IC=100µA
Collector-Emitter Breakdown
Voltag
V(BR)CER
80
120
V
IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown
Voltage
V(BR)CEO
30
40
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
6
8
V
IE=100µA
Collector Cut-Off Current
ICBO
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1KΩ
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
Emitter Cut-Off Current
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
25
50
110
180
50
100
200
220
mV
mV
mV
mV
IC=0.5A, IB=20mA*
IC=1A, IB=20mA*
IC=2A, IB=20mA*
IC=5A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
930
1050
mV
IC=5A, IB=200mA*
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
www.BDTIC.com/DIODES
3-292
PARAMETER
3-291
MAX.
ZTX849
TYPICAL CHARACTERISTICS
1.6
300
hFE - Normalised Gain
VCE(sat) - (Volts)
1.4
0.6
0.4
IC/IB=10
IC/IB=50
0.2
0
1.2
1.0
0.6
0.1
1
100
0.2
100
10
VCE=5V
VCE=1V
0.4
0
0.01
200
0.8
hFE - Typical Gain
0.8
0.01
IC - Collector Current (Amps)
0.1
100
10
1
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
VCE=1V
2.0
1.5
VBE - (Volts)
VBE(sat) - (Volts)
2.0
IC/IB=10
IC/IB=50
1.0
1.0
0.5
0.5
0.001
0.01
0.1
1
10
0.001
100
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
100
Single Pulse Test at Tamb=25°C
100
IC - Collector Current (Amps)
1.5
10
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
0.1
1
10
100
VCE - Collector Voltage (Volts)
www.BDTIC.com/DIODES
Safe Operating Area
3-293
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