Download NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS.

NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ZTX658
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Transition Frequency f T
TYP.
MAX.
50
Output capcitance
C obo
Switching times
t on
t off
10
130
3300
CONDITIONS.
MHz
I C=20mA, V CE=20V
f=20MHz
pF
V CB=20V, f=1MHz
APPLICATIONS
* Telephone dialler circuits
ns
ns
I C=100mA, V C=100V
I B1=10mA, I B2=-20mA
ABSOLUTE MAXIMUM RATINGS.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient 1
Junction to Ambient 2
Junction to Case
MAX.
UNIT
°C/W
°C/W
°C/W
175
116
70
R th(j-amb)1
R th(j-amb)2 †
R th(j-case)
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
VALUE
UNIT
V CBO
400
V
Collector-Emitter Voltage
V CEO
400
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
1
A
Continuous Collector Current
IC
500
mA
Power Dissipation at T amb=25°C
derate above 25°C
P tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T j:T stg
-55 to +200
°C
UNIT
CONDITIONS.
400
V
I C=100 µ A
Collector-Emitter
Breakdown Voltage
V (BR)CEO)
400
V
I C=10mA*
Emitter-Base
Breakdown Voltage
V (BR)EBO
5
V
I E=100 µ A
Collector Cut-Off
Current
I CBO
100
nA
V CB=320V
D=0.5
Collector Cut-Off
Current
I CBO
100
nA
V CE=320V
D=0.2
Emitter Cut-Off Current I EBO
100
nA
V EB=4V
Collector-Emitter
Saturation Voltage
V CE(sat)
0.3
0.25
0.5
V
V
V
I C=20mA, I B=1mA
I C=50mA, I B=5mA*
I C=100mA, I B=10mA*
Base-Emitter
Saturation Voltage
V BE(sat)
0.9
V
I C=100mA, I B=10mA*
Base-Emitter
Turn On Voltage
V BE(on)
0.9
V
IC=100mA, V CE=5V*
Static Forward Current
Transfer Ratio
h FE
D=t1/tP
Single Pulse
0.001
0.01
0.1
1
10
TYP.
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-230
SYMBOL
SYMBOL MIN.
D=0.1
0
0.0001
PARAMETER
Collector-Base Voltage
V (BR)CBO
tP
100
E-Line
TO92 Compatible
Collector-Base
Breakdown Voltage
D=1 (D.C.)
t1
E
PARAMETER
200
2.0
C
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot=1 Watt
UNIT
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
ZTX658
50
50
40
MAX.
I C=1mA, V CE=5V*
I C=100mA, V CE=5V*
I C=200mA, V CE=10V*
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3-229
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ZTX658
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Transition Frequency f T
TYP.
MAX.
50
Output capcitance
C obo
Switching times
t on
t off
10
130
3300
CONDITIONS.
MHz
I C=20mA, V CE=20V
f=20MHz
pF
V CB=20V, f=1MHz
APPLICATIONS
* Telephone dialler circuits
ns
ns
I C=100mA, V C=100V
I B1=10mA, I B2=-20mA
ABSOLUTE MAXIMUM RATINGS.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance:Junction to Ambient 1
Junction to Ambient 2
Junction to Case
MAX.
UNIT
°C/W
°C/W
°C/W
175
116
70
R th(j-amb)1
R th(j-amb)2 †
R th(j-case)
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
VALUE
UNIT
V CBO
400
V
Collector-Emitter Voltage
V CEO
400
V
Emitter-Base Voltage
V EBO
5
V
Peak Pulse Current
I CM
1
A
Continuous Collector Current
IC
500
mA
Power Dissipation at T amb=25°C
derate above 25°C
P tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T j:T stg
-55 to +200
°C
UNIT
CONDITIONS.
400
V
I C=100 µ A
Collector-Emitter
Breakdown Voltage
V (BR)CEO)
400
V
I C=10mA*
Emitter-Base
Breakdown Voltage
V (BR)EBO
5
V
I E=100 µ A
Collector Cut-Off
Current
I CBO
100
nA
V CB=320V
D=0.5
Collector Cut-Off
Current
I CBO
100
nA
V CE=320V
D=0.2
Emitter Cut-Off Current I EBO
100
nA
V EB=4V
Collector-Emitter
Saturation Voltage
V CE(sat)
0.3
0.25
0.5
V
V
V
I C=20mA, I B=1mA
I C=50mA, I B=5mA*
I C=100mA, I B=10mA*
Base-Emitter
Saturation Voltage
V BE(sat)
0.9
V
I C=100mA, I B=10mA*
Base-Emitter
Turn On Voltage
V BE(on)
0.9
V
IC=100mA, V CE=5V*
Static Forward Current
Transfer Ratio
h FE
D=t1/tP
Single Pulse
0.001
0.01
0.1
1
10
TYP.
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
www.BDTIC.com/DIODES
3-230
SYMBOL
SYMBOL MIN.
D=0.1
0
0.0001
PARAMETER
Collector-Base Voltage
V (BR)CBO
tP
100
E-Line
TO92 Compatible
Collector-Base
Breakdown Voltage
D=1 (D.C.)
t1
E
PARAMETER
200
2.0
C
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot=1 Watt
UNIT
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
ZTX658
50
50
40
MAX.
I C=1mA, V CE=5V*
I C=100mA, V CE=5V*
I C=200mA, V CE=10V*
3-229
ZTX658
TYPICAL CHARACTERISTICS
1.4
IC/IB=10
IC/IB=20
IC/IB=50
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.4
0.01
0.1
1
10
1.0
0.8
0.6
0.4
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+175°C
VCE=10V
1.6
300
200
100
0.4
1.4
0.2
20
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
0
0.001
10 20
1
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
IC - Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
VCE=10V
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
1
10 20
10
20
Single Pulse Test at Tamb=25°C
1.0
VBE - (Volts)
10
VCE(sat) v IC
0.6
0
0.001
1
VCE(sat) v IC
0.8
1.4
0.1
IC - Collector Current (Amps)
1.0
1.6
0.01
IC - Collector Current (Amps)
1.2
0
0.001
1.2
0
0.001
20
VBE(sat) - (Volts)
hFE - Normalised Gain
1.6
IC/IB=10
0.2
hFE - Typical gain
0
0.001
-55°C
+25°C
+100°C
+175°C
Tamb=25°C
VCE(sat) - (Volts)
VCE(sat) - (Volts)
1.6
0.1
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
1000
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3-231