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SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
FZT968
ISSUE 3 – OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
TYPICAL CHARACTERISTICS
0.8
0.8
+25 °C
IC/IB=250
IC/IB=200
IC/IB=100
IC/IB=50
IC/IB=10
0.4
0.2
0
0
1m
800
400
10m
100m
1
10
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
100
IC/IB=50
1.6
+100 °C
-55 °C
+25 °C
+100 °C
1.2
0.8
-55 °C
0.4
0
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-20
A
Continuous Collector Current
IC
-6
A
Power Dissipation at Tamb=25°C
Ptot
3
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
PARAMETER
SYMBOL
MIN.
TYP.
Breakdown Voltages
V(BR)CBO
-15
-28
V(BR)CEO
-12
-20
V
IC=-10mA*
V(BR)EBO
-6
-8
V
IE=-100µA
0
1m
10m
100m
1
10
100
1m
IC - Collector Current (A)
10m
100m
1
10
100
IC - Collector Current (A)
hFE v IC
1.4
VBE(sat) v IC
100
VCE=1V
-55 °C
+25 °C
+100 °C
10
0.7
DC
1s
100ms
10ms
1ms
100µs
1
0
10m
100m
1
10
100
IC - Collector Current (A)
0.1
1
10
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 295
100
UNIT
CONDITIONS.
V
IC=-100µA
µA
nA
VCB=-12V
VCB=-12V, Tamb=100°C
-10
nA
VEB=-6V
-130
-170
-450
mV
mV
mV
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*
-1050
-1200
mV
IC=-6A, IB=-250mA*
-870
-1050
mV
IC=-6A, VCE=-1V*
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation
Voltage
VCE(sat)
-65
-132
-360
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
80
Output Capacitance
Cobo
Switching Times
ton
toff
300
300
200
150
MAX.
-10
-1.0
Collector Cut-Off Current
0.1
1m
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
+25 °C
200
C
ABSOLUTE MAXIMUM RATINGS.
IC - Collector Current (A)
VCE=1V
E
+100 °C
+25 °C
-55 °C
1m
100
C
PARTMARKING DETAIL – FZT968
0.4
0.2
600
IC/IB=50
0.6
0.6
FZT968
450
450
300
240
50
IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
1000
MHz
IC=-100mA, VCE=-10V
f=50MHz
161
pF
VCB=-20V, f=1MHz
120
116
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
www.BDTIC.com/DIODES
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 294
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
FZT968
ISSUE 3 – OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
TYPICAL CHARACTERISTICS
0.8
0.8
+25 °C
IC/IB=250
IC/IB=200
IC/IB=100
IC/IB=50
IC/IB=10
0.4
0.2
0
0
1m
800
400
10m
100m
1
10
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
100
IC/IB=50
1.6
+100 °C
-55 °C
+25 °C
+100 °C
1.2
0.8
-55 °C
0.4
0
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-20
A
Continuous Collector Current
IC
-6
A
Power Dissipation at Tamb=25°C
Ptot
3
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
PARAMETER
SYMBOL
MIN.
TYP.
Breakdown Voltages
V(BR)CBO
-15
-28
V(BR)CEO
-12
-20
V
IC=-10mA*
V(BR)EBO
-6
-8
V
IE=-100µA
0
1m
10m
100m
1
10
100
1m
IC - Collector Current (A)
10m
100m
1
10
100
IC - Collector Current (A)
hFE v IC
1.4
VBE(sat) v IC
100
VCE=1V
-55 °C
+25 °C
+100 °C
10
0.7
DC
1s
100ms
10ms
1ms
100µs
1
0
10m
100m
1
10
100
IC - Collector Current (A)
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
www.BDTIC.com/DIODES
3 - 295
UNIT
CONDITIONS.
V
IC=-100µA
µA
nA
VCB=-12V
VCB=-12V, Tamb=100°C
-10
nA
VEB=-6V
-130
-170
-450
mV
mV
mV
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*
-1050
-1200
mV
IC=-6A, IB=-250mA*
-870
-1050
mV
IC=-6A, VCE=-1V*
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation
Voltage
VCE(sat)
-65
-132
-360
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
80
Output Capacitance
Cobo
Switching Times
ton
toff
300
300
200
150
MAX.
-10
-1.0
Collector Cut-Off Current
0.1
1m
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
+25 °C
200
C
ABSOLUTE MAXIMUM RATINGS.
IC - Collector Current (A)
VCE=1V
E
+100 °C
+25 °C
-55 °C
1m
100
C
PARTMARKING DETAIL – FZT968
0.4
0.2
600
IC/IB=50
0.6
0.6
FZT968
450
450
300
240
50
IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
1000
MHz
IC=-100mA, VCE=-10V
f=50MHz
161
pF
VCB=-20V, f=1MHz
120
116
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 294
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