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KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature Range -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 ICBO Collector Cut-off Current VCB = 60V, IE = 0 hFE DC Current Gain * VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA V 0.01 35 50 75 100 40 VCE (sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE (sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 300 µA 300 0.3 1.0 V V 1.2 2.0 V V fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8 MHz pF NF Noise Figure IC = 100µA, VCE = 10V RS = 1KΩ, f = 1MHz 4 dB tON Turn On Time VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA 35 ns tOFF Turn Off Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 285 ns * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% www.BDTIC.com/FAIRCHILD ©2006 Fairchild Semiconductor Corporation KST2222A Rev. B 1 www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor May 2006 KST2222A NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 0.4 V ce=5V 250 B=10 Vce(sat), Saturation Current,[V] hfe, Current Gain 125C 200 75C 25C 150 100 50 0.3 0.2 125C 0.1 75C 25C 1 10 1 100 10 C o lle c to r C u rre n t, [m A ] Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current 1.0 Leakage current of Collector - Base(nA) 100 B=10 Vbe(sat), Saturation Current,[V] 0.9 0.8 0.7 0.6 25C 0.5 75C 0.4 125C 0.3 0.1 100 Collector Current, [mA] 1 10 V C B = 60V 10 1 25 100 50 75 100 125 150 Tem perature, ['C ] Collector Current, [m A] Figure 5. Output Capacitance Figure 6. Power Dissipation vs Ambient Temperature 0.4 IE = 0 f = 1M Hz PD - Power Dissipation (W) Cob [pF], Capacitance 10 1 0.3 0.2 0.1 0.0 0.1 1 10 0 100 25 50 75 100 125 150 O V C B [V ], C o lle cto r-B a se V o lta g e Temperature, [ C] www.BDTIC.com/FAIRCHILD 2 KST2222A Rev. B www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters www.BDTIC.com/FAIRCHILD 3 KST2222A Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 www.BDTIC.com/FAIRCHILD 4 KST2222A Rev. B www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor TRADEMARKS