Download KSP 10 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

KSP10
KSP10
VHF/UHF transistor
TO-92
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
30
Units
V
VCEO
VEBO
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
3.0
V
PC
Collector Power Dissipation (Ta=25°C)
350
mW
Derate above 25°C
2.8
mW/°C
PC
Collector Power Dissipation (TC=25°C)
1.0
W
Derate above 25°C
8.0
W/°C
°C
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55~150
°C
Rth(j-c)
Thermal Resistance, Junction to Case
125
°C/W
Rth(j-a)
Thermal Resistance, Junction to Ambient
357
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=100µA, IE=0
Min.
30
BVCEO
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
25
BVEBO
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
3.0
ICBO
Collector Cut-off Current
VCB=25V, IE=0
IEBO
Emitter Cut-off Current
VEB=2V, IC=0
hFE
DC Current Gain
VCE=10V, IC=4mA
Max.
Units
V
V
V
100
nA
100
nA
60
VCE (sat)
Collector-Emitter Saturation Voltage
IC=4mA, IB=0.4mA
0.5
V
VBE (on)
Base-Emitter On Voltage
VCE=10V, IC=4mA
0.95
V
fT
Current Gain Bandwidth Product
VCE=10V, IC=4mA, f=100MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
Crb
Collector Base Feedback Capacitance
VCB=10V, IE=0, f=1MHz
Cc·rbb´
Collector Base Time Constant
VCB=10V, IC=4mA,
f=31.8MHz
650
0.35
MHz
0.7
pF
0.65
pF
9.0
ps
* Pulse Test: PW≤300µs, Duty Cycle≤2%
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©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP10
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = 10V
100
10
1
1
10
100
1000
10000
IC = 10 IB
100
10
0.1
V CE(sat)
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
VBE(sat)
1000
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
140
VCE = 10V
f=100MHz
], INPUT ADMITTANCE
120
1000
100
100
80
gib
60
-bib
yib[
Ω
40
20
10
1
10
100
100
IC[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product
-20
1000MHz
-30
700
-40
200
Figure 4. Rectangular Form
], FORWARD TRANSFER ADMITTANCE
-10
yob[
Ω
], OUTPUT ADMITTANCE
0
400
100
-50
yfb[
Ω
-60
10
20
30
40
gib[
50
Ω
0
60
]
Figure 5. Polar Form
70
1000
f[MHz], FREQUENCY
80
90
100
90
80
70
bfb
60
50
40
30
-gfb
20
10
0
-10
-20
-30
100
1000
f[MHz], FREQUENCY
Figure 6. Rectangular Form
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©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP10
Typical Characteristics (Continued)
90
70
400
200
60
],
600
jbfb[
700
100
5
4
Ω
Ω
50
yfb[ ],
REVERSE TRANSFER ADMITTANCE
6
80
40
30
1000MHz
20
3
-brb
2
1
10
60
50
40
30
20
gfb[
Ω
70
10
0
-10
-20
-30
0
100
]
Figure 7. Polar Form
Figure 8. Rectangular Form
10
2
9
], OUTPUT ADMITTANCE
3
1
],
0
Ω
jbrb[
1000
f[MHz], FREQUENCY
-1
100
200
-2
400
7
6
5
4
bob
3
Ω
-3
8
yob[
700
-4
2
gob
1
-1.6
-1.2
-0.8
-0.4
0.0
gfb[
Ω
-5
-2.0
1000MHz
0.4
0.8
1.2
1.6
]
2.0
0
100
1000
f[MHz], FREQUENCY
Figure 9. Polar Form
Figure 10. Rectangular Form
16
14
12
10
],
1000MHz
jbob[
Ω
8
700
6
4
400
200
2
100
0
2
4
gob[
Ω
0
6
8
]
Figure 11. Polar Form
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©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP10
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
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©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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PRODUCT STATUS DEFINITIONS
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Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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design.
No Identification Needed
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Not In Production
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The datasheet is printed for reference information only.
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©2002 Fairchild Semiconductor Corporation
Rev. I1