Download FDP0 32N08 B_ F10

FDP032N08B_F102
N-Channel PowerTrench® MOSFET
80V, 211A, 3.3mΩ
Features
Description
• RDS(on) = 2.85mΩ (Typ.)@ VGS = 10V, ID = 50A
• Low reverse recovery charge, Qrr
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
• Soft reverse recovery body diode
Application
• Enables highly efficiency in synchronous rectification
• Synchronous Rectification for ATX / Server / Telecom PSU
• Fast Switching Speed
• Battery Charger and Battery Protection circuit
• 100% UIL Tested
• DC motor drives and Uninterruptible Power Supplies
• RoHS Compliant
• Micro Solar Inverter
• Low FOM RDS(on)*QG
D
G
G
TO-220
D
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
Drain Current
ID
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Units
V
±20
V
- Continuous (TC = 25oC, Silicon Limited)
211*
- Continuous (TC = 100oC, Silicon Limited)
149*
- Continuous (TC = 25oC, Package Limited)
120
- Pulsed
(Note 1)
844
A
(Note 2)
649
mJ
6.0
V/ns
(Note 3)
A
(TC = 25oC)
263
W
- Derate above 25oC
1.75
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FDP032N08B_F102
80
-55 to +175
o
C
300
o
C
* Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
FDP032N08B_F102
RθJC
Thermal Resistance, Junction to Case, Max
0.57
RθJA
Thermal Resistance, Junction to Ambient, Max
62.5
Units
oC/W
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©2012 Fairchild Semiconductor Corporation
FDP032N08B_F102 Rev.C0
1
www.fairchildsemi.com
FDP032N08B_F102 Channel PowerTrench® MOSFET
October 2012
Device Marking
FDP032N08B
Device
FDP032N08B_F102
Package
TO-220
Description
F102: Trimmed Leads
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
80
-
-
V
-
0.04
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 64V, VGS = 0V
-
-
1
VDS = 64V, TC = 150oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.5
-
4.5
V
-
2.85
3.3
mΩ
-
168
-
S
-
8245
10965
pF
-
1250
1660
pF
-
28
-
pF
-
2337
-
pF
-
111
144
nC
-
44
-
nC
-
23
-
nC
(Note 4)
-
5.6
-
V
(Note 5)
-
98.2
-
nC
-
114
-
nC
-
38
86
ns
-
44
97
ns
-
71
152
ns
-
31
72
ns
-
2.3
-
Ω
ID = 250μA, Referenced to
25oC
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 100A
VDS = 10V, ID = 100A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss(er)
Energy Related Output Capacitance
Qg(tot)
Total Gate Charge at 10V
VDS = 40V, VGS = 0V
f = 1MHz
VDS = 40V, VGS = 0V
VDS = 40V, ID = 100A
VGS = 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
Vplateau
Gate Plateau Volatge
Qsync
Total Gate Charge Sync.
VDS = 0V, ID = 50A
Qoss
Output Charge
VDS = 40V, VGS = 0V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
ESR
Equivalent Series Resistance (G-S)
VDD = 40V, ID = 100A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
f = 1MHz
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
211*
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
844
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 100A
-
-
1.3
V
trr
Reverse Recovery Time
75
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, VDD=40V, ISD = 100A
dIF/dt = 100A/μs
-
102
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 20.8A, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. See the test circuit in page 8
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FDP032N08B_F102 Rev.C0
2
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
400
100
ID, Drain Current[A]
ID, Drain Current[A]
100
10
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
1
0.1
o
25 C
10
o
o
175 C
-55 C
1
1
VDS, Drain-Source Voltage[V]
10
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
6
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
IS, Reverse Drain Current [A]
4.0
RDS(ON) [mΩ],
Drain-Source On-Resistance
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
3.5
VGS = 10V
3.0
2.5
VGS = 20V
100
o
175 C
o
25 C
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
o
*Note: TC = 25 C
2.0
0
90
180
270
ID, Drain Current [A]
360
1
0.3
450
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
1000
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
VDS, Drain-Source Voltage [V]
VDS = 16V
VDS = 40V
VDS = 64V
8
6
4
2
Crss
*Note: ID = 100A
0
80
0
20
40
60
80
100
Qg, Total Gate Charge [nC]
120
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FDP032N08B_F102 Rev.C0
3
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-80
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
1.6
1.4
1.2
1.0
0
40
80
120 160
o
TJ, Junction Temperature [ C]
200
240
100μs
10
1ms
Operation in This Area
is Limited by R DS(on)
1
200
ID, Drain Current [A]
100
10ms
100ms
DC
SINGLE PULSE
o
TC = 25 C
0.1
160
VGS = 10V
120
80
o
40
TJ = 175 C
o
o
RθJC = 0.57 C/W
RθJC = 0.57 C/W
0
25
0.01
1
10
VDS, Drain-Source Voltage [V]
100
Figure 11. Eoss vs. Drain to Source Voltage
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 12. Unclamped Inductive
Switching Capability
100
5
IAS, AVALANCHE CURRENT (A)
4
EOSS, [μJ]
-40
Figure 10. Maximum Drain Current
1000
3
2
1
0
*Notes:
1. VGS = 10V
2. ID = 100A
0.8
0.6
-80
200
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
ID, Drain Current [A]
1.8
0
15
30
45
60
75
VDS, Drain to Source Voltage [V]
TJ = 25 oC
10
1
0.001
90
TJ = 150 oC
0.01
0.1
1
10
100
500
tAV, TIME IN AVALANCHE (ms)
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FDP032N08B_F102 Rev.C0
4
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.2
PDM
0.1
0.1
t1
*Notes:
0.05
o
0.02
0.01
1. ZθJC(t) = 0.57 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
-5
10
t2
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
-1
10
1
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FDP032N08B_F102 Rev.C0
5
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
D
G
S
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FDP032N08B_F102 Rev.C0
6
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
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FDP032N08B_F102 Rev.C0
7
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Total Gate Charge Qsync. Test Circuit & Waveforms
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FDP032N08B_F102 Rev. C0
8
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220
(F102: Trimmed Leads)
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FDP032N08B_F102 Rev.C0
9
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tm
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Product Status
Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I61
FDP032N08B_F102 Rev. C0
10
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FDP032N08B_F102 N-Channel PowerTrench® MOSFET
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