Download MJE 2955T PNP Silicon Transistor Absolute Maximum Ratings

MJE2955T
MJE2955T
General Purpose and Switching Applications
• DC Current Gain Specified to IC = 10 A
• High Current Gain Bandwidth Product : fT = 2MHz (Min.)
TO-220
1
1.Base
2.Collector
3.Emitter
PNP Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Value
- 70
Units
V
- 60
V
-5
V
- 10
A
IB
Base Current
-6
A
PC
Collector Dissipation (TC=25°C)
75
W
PC
Collector Dissipation (Ta=25°C)
0.6
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector- Emitter Breakdown Voltage
Test Condition
IC= - 200mA, IB = 0
ICEO
Collector Cut-off Current
VCE = - 30V, IB = 0
-700
µA
ICEX1
Collector Cut-off Current
VCE = - 70V, VBE(off) = 1.5V
-1
mA
ICEX2
Collector Cut-off Current
VCE = - 70V, VBE(off) = 1.5V
@ TC = 150°C
-5
mA
-5
mA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE
* DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = - 10A
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A
VBE (on)
* Base-Emitter ON Voltage
VCE = - 4V, IC = - 4A
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 500mA
Min.
-60
20
5
Max.
100
-1.1
-8
-1.8
2
Units
V
V
V
V
MHz
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
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©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE2955T
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristic
1000
hFE, DC CURRENT GAIN
VCE = -2V
100
10
1
-0.01
-0.1
-1
-10
-10
IC = 10IB
VBE(sat)
-1
-0.1
V CE(sat)
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
-10
-100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
105
-100
1m s
s
5m s
0µ
DC
PC[W], POWER DISSIPATION
-10
10
IC[A], COLLECTOR CURRENT
90
-1
75
60
45
30
15
0
-0.1
-1
-10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
-100
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 4. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE2955T
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. G