Download KSH210 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings

KSH210
KSH210
D-PAK for Surface Mount Applications
•
•
•
•
High DC Current Gain
Low Collector Emitter Saturation Voltage
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
- 40
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
- 25
-8
V
V
IC
Collector Current (DC)
-5
A
ICP
Collector Peck Current (Pulse)
- 10
A
IB
Base Current
-1
A
PC
Collector Dissipation (TC = 25°C)
12.5
W
Collector Dissipation (Ta = 25°C)
1.4
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
VCE(sat)
* Collector-Emitter Saturation Voltage
Test Condition
IC = - 10mA, IB = 0
Min.
-25
Max.
Units
V
VCB = - 40V, IE = 0
-100
nA
VEBO = - 8V, IC = 0
-100
nA
70
45
10
IC = - 500mA, IB= - 50mA
IC = - 2A, IB = - 200mA
IC = - 5A, IB = - 1A
180
-0.3
-0.75
-1.8
V
V
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 5A, IB = - 1A
-2.5
V
VBE(on)
* Base-Emitter On Voltage
VCE = - 1V, IC = - 2A
-1.6
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 100mA
Cob
Output Capacitance
VCB = - 10V, IE = 0, f = 0.1MHz
65
MHz
120
pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH210
Typical Characteristics
-10
100
VCE=-2V
VCE=-1V
10
1
-0.01
-0.1
-1
-10
VCE(sat),VBE(sat)[V], SATURATION VOLTAGE
hFE, DC CURRENT GAIN
1000
IC =10IB
-1
VBE(sat)
-0.1
-0.01
-0.01
IC[A], COLLECTOR CURRENT
VCE(sat)
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
tR,tD[ns], TURN ON TIME
Cob[pF], CAPACITANCE
VCC =-30V
IC=10IB
100
10
1
-0.1
-1
-10
1
tR
0.1
tD
0.01
-0.01
-100
VCB[V], COLLECTOR BASE VOLTAGE
-10
Figure 4. Turn On Time
1000
-100
tSTG
100
tF
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
-10
-10
5m
s
s
0µ
10
IC[A], COLLECTOR CURRENT
VCC=-30V
IC=10IB
IB1=-IB2
tSTG,tF[ns], TURN OFF TIME
-1
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
10
-0.01
-0.1
50
0
1mµs
s
DC
-1
-0.1
-0.01
-0.1
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH210
Typical Characteristics
(Continued)
20.0
PC[W], POWER DISSIPATION
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH210
Package Dimensions
D-PAK
0.50 ±0.10
MIN0.55
0.91 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(2XR0.25)
(1.00)
(3.05)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.30 ±0.10
(0.10)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH210
Package Dimensions (Continued)
I-PAK
2.30 ±0.20
6.60 ±0.20
5.34 ±0.20
2.30TYP
[2.30±0.20]
±0.20
±0.30
16.10
±0.20
±0.30
9.30
0.76 ±0.10
1.80
0.80
MAX0.96
0.50 ±0.10
6.10
±0.20
(0.50)
0.70
(4.34)
±0.10
0.60
±0.20
(0.50)
2.30TYP
[2.30±0.20]
0.50 ±0.10
Dimensions in Millimeters
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©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2002 Fairchild Semiconductor Corporation
Rev. I1