Download FJL6920 NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings

FJL6920
FJL6920
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1
TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Rating
1700
Units
V
800
V
6
V
IC
Collector Current (DC)
20
A
ICP*
Collector Current (Pulse)
30
A
PC
Collector Dissipation
200
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current
Test Conditions
VCB=1400V, RBE=0
Min.
Typ.
Max.
1
Units
mA
ICBO
Collector Cut-off Current
VCB=800V, IE=0
10
µA
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
1
mA
BVCBO
Collector-Base Breakdown Voltage
IC=500µA, IE=0
1700
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
800
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
6
V
hFE1
hFE2
DC Current Gain
VCE=5V, IC=1A
VCE=5V, IC=11A
8
5.5
VCE(sat)
Collector-Emitter Saturation Voltage
IC=11A, IB=2.75A
3
VBE(sat)
Base-Emitter Saturation Voltage
IC=11A, IB=2.75A
1.5
V
tSTG*
Storage Time
3
µs
tF*
Fall Time
VCC=200V, IC=10A, RL=20Ω
IB1=2.0A, IB2= - 4.0A
0.2
µs
8.5
0.15
V
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
RθjC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
0.625
Units
°C/W
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©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FJL6920
Typical Characteristics
100
16
IB=4.0A
VCE = 5V
12
IB=2.0A
10
IB =1.5A
8
IB =1.0A
6
IB=0.5A
4
IB=0.2A
o
10
Ta = - 25 C
2
0
2
4
6
8
1
0.1
10
1
10
100
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. DC Current Gain
10
10
IC = 3 IB
VCE(SAT) [V], SATURATION VOLTAGE
VCE(SAT) [V], SATURATION VOLTAGE
Ta = 25 C
o
0
o
Ta = 125 C
1
o
Ta = 25 C
o
Ta = - 25 C
0.1
0.01
0.1
1
10
IC = 5 IB
o
Ta = 125 C
1
o
Ta = 25 C
o
Ta = - 25 C
0.1
0.01
0.1
100
IC [A], COLLECTOR CURRENT
1
10
100
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
16
VCC = 200V,
IC = 10A, IB1 = 2A
VCE = 5V
tSTG & tF [µs], SWITCHING TIME
14
IC [A], COLLECTOR CURRENT
o
Ta = 125 C
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
14
12
10
8
6
4
2
o
125 C
0
0.0
o
25 C
tSTG
1
tF
0.1
o
- 25 C
0.01
0.2
0.4
0.6
0.8
1.0
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
1.2
1
10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
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©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FJL6920
Typical Characteristics (Continued)
100
10
tSTG
1
VCC = 200V,
IB1 = 2A, IB2 = - 4A
10
tSTG & tF [µs], SWITCHING TIME
tSTG & tF [µs], SWITCHING TIME
VCC = 200V,
IC = 10A, IB2 = - 4A
tF
0.1
tSTG
1
tF
0.1
0.01
1
10
1
IB1 [A], FORWARD BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
100
40
IC (Pulse)
t = 100ms
35
IC [A], COLLECTOR CURRENT
IC (DC)
10
1
0.1
o
TC = 25 C
Single Pulse
0.01
1
RB2 = 0, IB1 = 15A
VCC = 30V, L = 200µ H
t = 10ms
t = 1ms
IC [A], COLLECTOR CURRENT
10
10
100
1000
10000
30
25
20
15
VBE(off) = -6V
10
V BE(off) = -3V
5
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area
Figure 10. Reverse Bias Safe Operating Area
300
PC [W], POWER DISSIPATION
250
200
150
100
50
0
0
25
50
75
100
125
150
175
O
TC [ C], CASE TEMPERATURE
Figure 11. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FJL6920
Package Demensions
(8.30)
(1.00)
(2.00)
(7.00)
20.00 ±0.20
2.50 ±0.10
4.90 ±0.20
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
(1.50)
20.00 ±0.50
(7.00)
(2.00)
(11.00)
1.50 ±0.20
)
.20
.00
0 ±0
0)
2.0
(R
(R1
(0.50)
ø3.3
(9.00)
(9.00)
(8.30)
(4.00)
20.00 ±0.20
6.00 ±0.20
TO-264
+0.25
1.00 –0.10
+0.25
0.60 –0.10
2.80 ±0.30
(2.80)
5.45TYP
[5.45 ±0.30]
(0.15)
(1.50)
3.50 ±0.20
5.00 ±0.20
5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. H2