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FJB102
High Voltage Power Darlington Transistor
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Low Collector-Emitter Saturation Voltage
Equivalent Circuit
C
B
D2-PAK
1
1.Base
2.Collector
R1
3.Emitter
R2
R1 @ 10kW
R2 @ 0.6kW
E
Absolute Maximum Ratings
Value
Units
V CBO
Symbol
Collector-Base Voltage
Parameter
100
V
V CEO
Collector-Emitter Voltage
100
V
V EBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
* Collector Current (Pulse)
15
A
IB
Base Current (DC)
1
A
PC
Collector Dissipation (TC = 25°C)
80
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max.
Units
BV CEO(sus)
Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
100
BV EBO
Emitter-Base Breakdown Voltage
IE = 500mA, IC = 0
10
ICBO
Collector Cut-off Current
V CB = 100V, IE = 0
50
ICEO
Collector Cut-off Current
V CE = 50V, IE = 0
50
mA
IEBO
Emitter Cut-off Current
V EB = 5V, IC = 0
2
mA
hFE
DC Current Gain
V CE = 4V, IC = 3A
V CE = 4V, IC = 8A
V CE(sat)
Collector-Emitter Saturation Voltage
1000
200
V
V
mA
20000
IC = 3A, IB = 6mA
2.0
V
IC = 8A, IB = 80mA
2.5
V
V BE(ON)
Base-Emitter Saturation Voltage
V CE = 4V, IC = 8A
2.8
V
C ob
Output Capatitance
V E = 10V, IE = 0, f = 1MHz
200
pF
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.0.0
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FJB102 — High Voltage Power Darlington Transistor
October 2008
Device Marking
FJB102
Device
Package
Reel Size
Tape Width
Quantity
FJB102
D2-PAK
--
--
--
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.0.0
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FJB102 — High Voltage Power Darlington Transistor
Package Marking and Ordering Information
Figure 1. Static Characterstic
Figure 2. DC Current Gain
5
10k
VCE = 4V
4
3
IB = 300mA
2
IB = 200mA
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 1mA
1
1k
IB = 100mA
0
0
1
2
3
4
100
0.1
5
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Collector Output Capacitance
10k
10k
IE=0, f=1MHz
IC = 500 IB
Cob[pF], CAPACITANCE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 3. Saturation Voltage
VBE(sat)
1k
VCE(sat)
100
0.1
1
10
1k
100
10
1
0.1
100
Figure 5. Forward Biased Safe Operating Area
100
120
PC[W], COLLECTOR POWER DISSIPATION
1ms
10
5ms
DC
100ms
1
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.0.0
10
Figure 6. Power Derating
100
0.01
0.1
1
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
10
IC[A], COLLECTOR CURRENT
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FJB102 — High Voltage Power Darlington Transistor
Typical Performance Characteristics
FJB102 — High Voltage Power Darlington Transistor
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
FJB102 Rev. 1.0.0
www.fairchildsemi.com
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THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
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PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
2.
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
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A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJB102 Rev. A1
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FJB102 High Voltage Power Darlington Transistor
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