Download BU407/ 407H NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

BU407/407H
BU407/407H
High Voltage Switching
• Use In Horizontal Deflection Output Stage
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
7
A
10
A
ICP
Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
Value
330
Units
V
150
V
4
A
60
W
Junction Temperature
150
°C
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current
Test Condition
VCE = 330V, VBE = 0
VCE = 200V, VBE = 0
VCE = 200V, VBE = 0 @ TC= 150°C
IEBO
Emitter Cut-off Current
VBE = 6V, IC = 0
1
mA
VCE(sat)
Collector-Emitter Saturation Voltage
: BU407
: BU407H
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
1
1
V
V
Base-Emitter Saturation Voltage
: BU407
: BU407H
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
1.2
1.2
V
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
tOFF
Turn OFF Time
VBE(sat)
: BU407
: BU407H
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
Min.
Max.
5
100
1
10
Units
mA
µA
mA
MHz
0.75
0.4
µs
µs
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU407/407H
Typical Characteristics
5
00m
A
IB =
mA
180
1000
IB = 160mA
A
IB = 140m
A
IB = 120m
VCE = 5V
0m A
IB = 10
4
IB = 80
mA
IB = 60
3
IB
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 2
mA
= 4 0 mA
2
IB = 20mA
1
0
0
1
2
3
4
5
6
7
8
9
100
10
1
10
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10000
1000
IC = 10 IB
f = 1MHz
Cob [pF], CAPACITANCE
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
100
VBE(sat)
1000
100
VCE(sat)
10
100
10
1
1
10
100
1000
1
10000
10
IC[mA], COLLECTOR CURRENT
100
V CB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
IC Max. (Continuous)
s
1m
s
m
10
s
0m
10 ited
m
Li
1
VCE MAX.
d
ite
im
bL
S/
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
PD [W], POWER DISSIPATIOAN
10
n
io
at
ip
ss
Di
IC[A], COLLECTOR CURRENT
70
IC Max. (Pulsed)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU407/407H
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
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©2000 Fairchild Semiconductor International
Rev. E