Download FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6898AZ_F085
tm
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 9.4 A, 20 V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 18 mΩ @ VGS = 2.5 V
• Low gate charge (16 nC typical)
• ESD protection diode (note 3)
low RDS(ON)
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
DD1
DD1
D2
D
5
DD2
6
SO-8
Pin 1 SO-8
G2
S2 S
S
Symbol
3
Q1
7
G1
S1 G
S
Absolute Maximum Ratings
4
8
2
Q2
1
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
9.4
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
38
2
Power Dissipation for Single Operation
TJ, TSTG
(Note 1a)
W
1.6
(Note 1b)
1
(Note 1c)
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6898AZ
FDS6898AZ_F085
13’’
12mm
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6898AZ_F085 Rev. A
1
www.fairchildsemi.com
FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
February 2010
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
20
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 16 V,
V
mV/°C
21
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
10
µA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–10
µA
1
–3.5
1.5
V
mV/°C
10
13
14
14
18
21
mΩ
On Characteristics
(Note 2)
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
0.5
ID(on)
On–State Drain Current
VGS = 4.5 V, ID = 9.4 A
VGS = 2.5 V, ID = 8.3 A
VGS = 4.5 V, ID = 9.4 A,TJ = 125°C
VGS = 4.5V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 9.4 A
47
S
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
1821
pF
19
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
440
pF
208
pF
(Note 2)
10
20
ns
15
27
ns
Turn–Off Delay Time
34
55
ns
tf
Turn–Off Fall Time
16
29
ns
Qg
Total Gate Charge
16
23
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 9.4 A,
3
nC
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
0.7
(Note 2)
1.3
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
2
mounted on a 0.5in
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
2
in pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
Electrical Characteristics
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
FDS6898AZ_F085 Rev. A
2
www.fairchildsemi.com
2.2
VGS = 4.5V
3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
2.5V
30
2.0V
20
10
2
VGS = 2.0V
1.8
1.6
1.4
2.5V
1.2
3.0V
1
0
0.5
1
1.5
0
2
10
Figure 1. On-Region Characteristics.
1.6
20
30
40
I D, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.038
I D = 9.4A
VGS = 4.5V
RDS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
0
1.4
1.2
1
0.8
0.6
ID = 4.7A
0.03
0.022
TA = 125oC
0.014
TA = 25o C
0.006
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
25o C
IS, REVERSE DRAIN CURRENT (A)
TA = -55o C
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
125o C
30
20
10
0
0.5
1
1.5
2
TA = 125oC
1
25o C
0.1
-55oC
0.01
0.001
0.0001
2.5
0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDS6898AZ_F085 Rev. A
VGS = 0V
10
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
Typical Characteristics
www.fairchildsemi.com
2500
VDS = 5V
ID = 9.4A
10V
8
6
4
1500
1000
2
500
0
0
C OSS
CRSS
0
5
10
15
20
25
30
0
35
5
10
Figure 7. Gate Charge Characteristics.
40
P(pk), PEAK TRANSIENT POWER (W)
100µs
RDS(ON) LIMIT
1ms
10
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 135o C/W
0.1
TA = 25o C
0.01
0.01
0.1
1
20
Figure 8. Capacitance Characteristics.
100
10
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
30
20
10
0
0.001
100
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q g, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
CISS
2000
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1 / t 2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
t , TIME (sec)
Figure 11. Transient Thermal Response Curve.
100
1000
FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
Typical Characteristics
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6898AZ_F085 Rev. A
4
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tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
PowerTrench®
FRFET®
The Power Franchise®
®
Auto-SPM™
Global Power ResourceSM
PowerXS™
Green FPS™
Build it Now™
Programmable Active Droop™
Green FPS™ e-Series™
CorePLUS™
QFET®
TinyBoost™
QS™
Gmax™
CorePOWER™
TinyBuck™
Quiet Series™
GTO™
CROSSVOLT™
TinyCalc™
IntelliMAX™
RapidConfigure™
CTL™
TinyLogic®
ISOPLANAR™
Current Transfer Logic™
™
TINYOPTO™
®
MegaBuck™
DEUXPEED
TinyPower™
Dual Cool™
Saving our world, 1mW/W/kW at a time™
MICROCOUPLER™
TinyPWM™
EcoSPARK®
SignalWise™
MicroFET™
TinyWire™
EfficentMax™
SmartMax™
MicroPak™
TriFault Detect™
SMART START™
MicroPak2™
®
TRUECURRENT™*
MillerDrive™
SPM®
μSerDes™
STEALTH™
MotionMax™
Fairchild®
SuperFET™
Motion-SPM™
Fairchild Semiconductor®
SuperSOT™-3
OptiHiT™
FACT Quiet Series™
UHC®
SuperSOT™-6
OPTOLOGIC®
FACT®
®
Ultra FRFET™
®
OPTOPLANAR
SuperSOT™-8
FAST
®
UniFET™
SupreMOS™
FastvCore™
VCX™
SyncFET™
FETBench™
VisualMax™
Sync-Lock™
FlashWriter® *
PDP SPM™
XS™
®*
FPS™
Power-SPM™
F-PFS™
Rev. I47
FDS6898AZ_F085 Rev. A
5
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