Download FDS6681Z 30 Volt P-Channel PowerTrench MOSFET

FDS6681Z
30 Volt P-Channel PowerTrench® MOSFET
Features
General Description
• –20 A, –30 V.
This P-Channel MOSFET is produced using Fairchild
®
Semiconductor’s advanced PowerTrench process that
RDS(ON) = 4.6 mΩ @ VGS = –10 V
RDS(ON) = 6.5 mΩ @ VGS = –4.5 V
has been especially tailored to minimize the on-state
• Extended VGSS range (–25V) for battery applications
resistance.
• HBM ESD protection level of 8kV typical (note 3)
This device is well suited for Power Management and
• High performance trench technology for extremely
low RDS(ON)
load switching applications common in Notebook
• High power and current handling capability
Computers and Portable Battery Packs.
• Termination is Lead-free and RoHS Compliant
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
VDSS
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
–30
V
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation for Single Operation
– Continuous
(Note 1a)
– Pulsed
V
A
–105
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
±25
–20
W
1.0
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6681Z
FDS6681Z
13’’
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6681Z Rev B (W)
FDS6681Z
June 2005
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
ID = –250 µA
–30
V
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
–1
Gate–Body Leakage
VGS = ±25 V, VDS = 0 V
±10
µA
µA
–3
V
On Characteristics
VGS = 0 V,
–26
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –20 A
VGS = –4.5 V, ID = –17 A
VGS = –10 V, ID = –20 A,TJ=125°C
VDS = –5 V, ID = –20 A
–1
–1.8
6
3.8
5.2
5.0
79
mV/°C
4.6
6.5
6.3
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
7540
pF
1400
pF
1120
pF
(Note 2)
tf
Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at VGS = –10V
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
VDS = –15 V, ID = –20 A
20
35
ns
9
18
ns
660
1060
ns
380
610
ns
185
260
nC
150
Qg(TOT)
Total Gate Charge at VGS = –5V
105
Qgs
Gate–Source Charge
26
nC
nC
Qgd
Gate–Drain Charge
47
nC
FDS6681Z Rev B (W)
FDS6681Z
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
(Note 2)
tRR
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
Voltage
IF = –20 A,
Reverse Recovery Time
QRR
Reverse Recovery Charge
(Note 2)
VSD
dIF/dt = 100 A/µs
–0.7
–2.1
A
–1.2
V
125
ns
94
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
2
1in pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6681Z Rev B (W)
FDS6681Z
Electrical Characteristics
FDS6681Z
Typical Characteristics
105
2.4
VGS = -10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.0V
90
-ID, DRAIN CURRENT (A)
-6.0V
-4.5V
75
-3.5V
60
45
30
-3.0V
15
0
2
1.8
-4.0V
1.6
-4.5V
1.4
-5.0V
1.2
-6.0V
-8.0V
0.5
1
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
0
Figure 1. On-Region Characteristics.
15
30
45
60
75
-ID, DRAIN CURRENT (A)
90
105
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
1.6
ID = -20A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
ID = -10A
1.4
1.2
1
0.8
0.6
0.01
0.008
TA = 125oC
0.006
0.004
o
TA = 25 C
0.002
-50
-30
-10
10
30
50
70
90
110
o
TJ, JUNCTION TEMPERATURE ( C)
130
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
1000
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
90
-ID, DRAIN CURRENT (A)
-10V
1
0.8
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
2.2
75
60
45
TA = 125oC
-55oC
30
15
o
25 C
100
10
TA = 125oC
1
o
25 C
0.1
-55oC
0.01
0.001
0
1
1.25
1.5
1.75
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.25
0
0.2
0.4
0.6
0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6681Z Rev B (W)
FDS6681Z
Typical Characteristics
10000
f = 1MHz
VGS = 0 V
ID = -20A
8000
8
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
VDS = -10V
6
-20V
4
-15V
Ciss
6000
4000
Coss
2
2000
0
0
Crss
0
40
80
120
Qg, GATE CHARGE (nC)
160
0
200
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
1ms
10ms
100ms
10
1s
10s
1
DC
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
o
TA = 25 C
0.01
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
30
50
100us
0.1
10
15
20
25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
100
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6681Z Rev B (W)
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16