Download FDS5690 60V N-Channel PowerTrench MOSFET

FDS5690
60V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
•
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
RDS(on) = 0.033 Ω @ VGS = 6 V.
•
Low gate charge (23nC typical).
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
Applications
•
High power and current handling capability.
•
•
DC/DC converter
Motor drives
D
D
D
D
SO-8
S
S
S
4
6
3
7
2
8
1
G
Absolute Maximum Ratings
Symbol
5
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
±20
7
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
A
50
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS5690
FDS5690
13’’
12mm
2500 units
 2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C
FDS5690
March 2000
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
60
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
µA
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
4
V
On Characteristics
V
mV/°C
57
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C
ID(on)
On-State Drain Current
VGS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A, TJ=125°C
VGS = 6 V, ID = 6.5 A
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V, ID = 7 A
2
2.5
mV/°C
-5.9
0.022
0.037
0.025
0.028
0.050
0.033
25
Ω
A
24
S
Dynamic Characteristics
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1107
pF
149
pF
72
pF
(Note 2)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 30 V, ID = 7 A,
VGS = 10 V,
10
18
9
18
ns
ns
24
39
ns
10
18
ns
23
32
nC
4
nC
6.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
(Note 2)
0.75
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a 0.003 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS5690 Rev. C
FDS5690
DMOS Electrical Characteristics
FDS5690
Typical Characteristics
50
2
VGS = 10V
6.0V
40
1.8
5.0V
1.6
4.5V
30
VGS = 4.0V
4.5V
1.4
5.0V
20
1.2
4.0V
6.0V
7.0V
10V
10
1
3.5V
0.8
0
0
1
2
3
4
5
0
6
10
20
30
40
50
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
2
0.07
ID = 7A
VGS = 10V
1.8
ID = 3.5A
0.06
1.6
0.05
1.4
o
TA = 125 C
0.04
1.2
0.03
1
0.8
0.02
0.6
0.01
0.4
o
TA = 25 C
0
-50
-25
0
25
50
75
100
125
150
3
4
5
o
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
50
VGS = 0V
VDS = 5V
o
o
25 C
TA = -55 C
40
10
o
o
TA = 125 C
125 C
1
o
25 C
30
o
0.1
-55 C
20
0.01
10
0.001
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS5690 Rev. C
FDS5690
Typical Characteristics
(continued)
10
1600
f = 1MHz
VGS = 0 V
ID = 7A
VDS = 10V
20V
8
30V
1200
CISS
6
800
4
400
2
COSS
CRSS
0
0
0
5
10
15
20
25
0
10
Qg, GATE CHARGE (nC)
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
SINGLE PULSE
o
100µs
1ms
RDS(ON) LIMIT
10
POWER (W)
10ms
10s
DC
VGS = 10V
SINGLE PULSE
0.1
o
TA=25 C
100ms
1s
1
RθJA=125 C/W
40
o
30
20
10
RθJA = 125 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
D = 0.5
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
Single Pulse
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
t2
TJ - TA = P * RθJA (t)
0.005
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS5690 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E