Download FDC2612 200V N-Channel PowerTrench MOSFET

FDC2612
200V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 1.1 A, 200 V.
Applications
• High power and current handling capability
RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• Fast switching speed
• DC/DC converter
• Low gate charge (8nC typical)
D
D
S
SuperSOT TM-6
D
D
6
2
5
3
4
G
Absolute Maximum Ratings
Symbol
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
200
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
(Note 1a)
1.1
A
PD
Maximum Power Dissipation
(Note 1a)
1.6
(Note 1b)
0.8
– Continuous
– Pulsed
TJ, TSTG
4
Operating and Storage Junction Temperature Range
W
−55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.262
FDC2612
7’’
8mm
3000 units
2002 Fairchild Semiconductor Corporation
FDC2612 Rev B3 (W)
FDC2612
February 2002
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
ID = 250 µA
200
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 160 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V ,
VDS = 0 V
–100
nA
4.5
V
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
mV/°C
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
ID(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On Resistance
On–State Drain Current
VGS = 10 V,
ID = 1.1 A
VGS = 10 V, ID = 1.1 A, TJ = 125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V,
RDS(on)
246
2
4
–8.7
605
1133
mV/°C
725
1430
mΩ
4
ID = 1.1 A
A
4.4
S
Dynamic Characteristics
VDS = 100 V,
f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
V GS = 0 V,
234
pF
18
pF
8
pF
(Note 2)
VDD = 100 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
6
12
ns
6
12
ns
ns
td(off)
Turn–Off Delay Time
17
30
tf
Turn–Off Fall Time
8
16
ns
Qg
Total Gate Charge
8
11
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 100 V,
VGS = 10 V
ID = 1.1 A,
1.6
nC
2.2
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V,
IS = 1.3 A(Note 2)
Voltage
Diode Reverse Recovery Time
IF = 1.1A,
(Note 2)
diF/dt = 300 A/µs
Diode Reverse Recovery Charge
1.3
0.8
1.2
74.5
194
A
V
nS
nC
Notes:
1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC2612 Rev B3(W)
FDC2612
Electrical Characteristics
FDC2612
Typical Characteristics
1.4
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4
6.0V
ID, DRAIN CURRENT (A)
6.5V
3
5.5V
2
1
1.3
VGS = 4.0V
1.2
4.5V
1.1
0
10V
1
2
4
6
8
0
10
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.6
1.5
ID = 0.6A
ID = 1.1A
VGS =10V
2.2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
0.9
0
1.8
1.4
1
0.6
0.2
-50
-25
0
25
50
75
100
125
1.3
1.1
TA = 125oC
0.9
0.7
TA = 25oC
0.5
150
4
o
5
TJ, JUNCTION TEMPERATURE ( C)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
IS, REVERSE DRAIN CURRENT (A)
8
VDS = 25V
ID, DRAIN CURRENT (A)
5.0V
6
4
TA = 125oC
2
25oC
-55oC
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
7
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC2612 Rev B3(W)
350
ID = 1.1A
100V
VDS = 50V
CISS
150V
9
6
250
200
150
100
COSS
3
50
CRSS
0
0
0
2
4
6
8
10
0
25
Qg, GATE CHARGE (nC)
50
100
125
150
Figure 8. Capacitance Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
40
100µs
RDS(ON) LIMIT
1ms
1
10ms
100ms
0.1
DC
1s
VGS = 10V
SINGLE PULSE
RθJA = 156oC/W
0.01
o
TA = 25 C
0.001
0.1
1
10
100
1000
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
75
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
300
12
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
15
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
0.2
0.1
P(pk)
0.1
t1
0.05
0.02
0.01
0.01
0.0001
0.001
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC2612 Rev B3(W)
FDC2612
Typical Characteristics
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4