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FDPC8014S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
„ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
dual package. The switch node has been internally connected to
„ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
enable easy placement and routing of synchronous buck
Q2: N-Channel
SyncFETTM (Q2) have been designed to provide optimal power
converters. The control MOSFET (Q1) and synchronous
„ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A
efficiency.
„ Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A
Applications
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ Computing
„ Communications
„ MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
„ General Purpose Point of Load
„ RoHS Compliant
PAD10
V+(HSD)
PIN1
PIN1
HSG
SW
GR
PAD9
GND(LSS)
V+
V+
Top
LSG
LSG HSG
GR
SW
SW
SW
V+
SW
SW
V+
SW
Bottom
Power Clip 5X6
Pin
Name
Description
1
HSG
High Side Gate
3,4,10
Pin
V+(HSD)
Name
High Side Drain
Description
Pin
2
GR
Gate Return
5,6,7
SW
Switching Node, Low Side Drain 9
8
Name
LSG
Description
Low Side Gate
GND(LSS) Low Side Source
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
PD
TJ, TSTG
Q2
25
Units
V
V
±12
±12
-Continuous
TC = 25 °C
60
110
-Continuous
TA = 25 °C
20Note1a
41Note1b
75
160
-Pulsed
EAS
Q1
25Note5
TA = 25 °C (Note 4)
Single Pulse Avalanche Energy
(Note 3)
73
253
Power Dissipation for Single Operation
TC = 25 °C
21
42
Power Dissipation for Single Operation
TA = 25 °C
2.1Note1a
2.3 Note1b
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
6.0
3.0
RθJA
Thermal Resistance, Junction to Ambient
60Note1a
55Note1b
RθJA
Thermal Resistance, Junction to Ambient
130Note1c
120Note1d
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
1
°C/W
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
April 2014
Device Marking
05OD/16OD
Device
FDPC8014S
Package
Power Clip 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
25
25
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
1
500
μA
μA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 12 V/-8 V, VDS= 0 V
VGS = 12 V/-8 V, VDS= 0 V
Q1
Q2
±100
±100
nA
nA
2.5
2.5
V
V
24
24
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1
Q2
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
-4
-3
VGS = 10V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A,TJ =125 °C
Q1
2.8
3.4
3.9
3.8
4.7
5.3
VGS = 10V, ID = 41 A
VGS = 4.5 V, ID = 37 A
VGS = 10 V, ID = 41 A ,TJ =125 °C
Q2
0.9
1.0
1.1
1.2
1.4
1.5
VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 41 A
Q1
Q2
182
315
Q1
Q2
1695
6580
2375
9870
pF
Q1
Q2
495
1720
710
2580
pF
Q1
Q2
54
204
100
370
pF
0.4
0.4
1.2
1.2
Ω
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
0.8
1.1
1.3
1.4
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
0.1
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
Q1:
VDD = 13 V, ID = 20 A, RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 41 A, RGEN = 6 Ω
VGS = 0 V to 10 V
Q1
V = 13 V, ID
VGS = 0 V to 4.5 V DD
= 20 A
Q2
VDD = 13 V, ID
= 41 A
2
Q1
Q2
8
16
16
28
ns
Q1
Q2
2
6
10
11
ns
Q1
Q2
24
47
38
75
ns
Q1
Q2
2
4
10
10
ns
Q1
Q2
25
93
35
130
nC
Q1
Q2
11
43
16
60
nC
Q1
Q2
3.4
13
nC
Q1
Q2
2.2
8.5
nC
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FDPC8014S PowerTrench® Power Clip
Package Marking and Ordering Information
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
0.8
1.2
1.2
V
Q1
Q2
60
110
A
Q1
Q2
75
160
A
Q1
Q2
25
36
40
58
ns
Q1
Q2
10
47
20
75
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
IS
Diode continuous forward current
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 41 A
(Note 2)
(Note 2)
TC = 25 °C
IS,Pulse
Diode pulse current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 41 A, di/dt = 300 A/μs
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 253 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 13 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 43 A.
4. Pulsed Id limited by junction temperature,td<=10 us. Please refer to SOA curve for more details.
5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
3
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
Electrical Characteristics TJ = 25 °C unless otherwise noted
75
5
ID, DRAIN CURRENT (A)
60
VGS = 4.5 V
45
VGS = 3.5 V
VGS = 3 V
30
VGS = 2.5 V
15
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0.8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
4
VGS = 2.5 V
3
2
VGS = 3 V
1
0
15
30
45
60
75
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
12
ID = 20 A
VGS = 10 V
1.5
rDS(on), DRAIN TO
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
0
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
ID = 20 A
6
TJ = 125 oC
3
TJ = 25 oC
0
-50
1
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On-Resistance vs. Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
IS, REVERSE DRAIN CURRENT (A)
75
VDS = 5 V
60
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3.5 V
45
TJ =
150 oC
30
TJ = 25 oC
15
TJ = -55 oC
0
1.0
1.5
2.0
2.5
10
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
4
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FDPC8014S PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10000
ID = 20 A
8
VDD = 13 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = 10 V
4
VDD = 15 V
1000
Ciss
Coss
100
f = 1 MHz
VGS = 0 V
2
0
0
6
12
18
24
10
0.1
30
1
Figure 7. Gate Charge Characteristics
25
Figure 8. Capacitance vs. Drain
to Source Voltage
70
30
ID, DRAIN CURRENT (A)
60
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
50
VGS = 10 V
40
VGS = 4.5 V
30
20
o
RθJC = 6.0 C/W
10
1
0.001
0.01
0.1
1
10
0
25
100
50
150
5000
P(PK), PEAK TRANSIENT POWER (W)
100
10 μs
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
10 ms
DC
SINGLE PULSE
TJ = MAX RATED
RθJC = 6.0 oC/W
CURVE BENT TO
MEASURED DATA
TC = 25 oC
0.1
0.1
125
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
1
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
10
75
o
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
IAS, AVALANCHE CURRENT (A)
Crss
1
10
80
o
RθJC = 6.0 C/W
1000
o
TC = 25 C
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
SINGLE PULSE
5
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FDPC8014S PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZθJC (t) = r(t) x RθJc
RθJC = 6.0 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
SINGLE PULSE
0.01
0.005
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
6
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FDPC8014S PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
6
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
120
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
160
VGS = 2.5 V
VGS = 3 V
80
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.00
0.25
0.50
0.75
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
VGS = 2.5 V
VGS = 10 V
0
0
40
80
ID, DRAIN CURRENT (A)
120
160
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
5
ID = 41 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 3.5 V
VGS = 4.5 V
1.00
Figure 14. On- Region Characteristics
4
ID = 41 A
3
2
TJ = 125 oC
1
TJ = 25 oC
2
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
120
VDS = 5 V
80
TJ = 125
TJ = 25 oC
40
TJ = -55 oC
1.5
2.0
2.5
200
100
8
10
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
6
Figure 17. On-Resistance vs. Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
oC
4
VGS, GATE TO SOURCE VOLTAGE (V)
160
0
1.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
-50
Figure 16. Normalized On-Resistance
vs. Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 3 V
2
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
7
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FDPC8014S PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
10
10000
ID = 41 A
Ciss
8
VDD = 10 V
CAPACITANCE (pF)
VDD = 13 V
6
VDD = 15 V
4
1000
Coss
2
f = 1 MHz
VGS = 0 V
0
0
20
40
60
80
Crss
100
0.1
100
1
10
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 21. Capacitance vs. Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
180
100
TJ
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
160
= 100 oC
10
TJ = 25 oC
TJ = 125 oC
140
VGS = 10 V
120
100
80
Limited by Package
60
RθJC = 3.0 C/W
VGS = 4.5 V
o
40
20
1
0.001
0.01
0.1
1
10
100
0
25
1000
50
4
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
150
10
10 μs
100
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
RθJC = 3.0 oC/W
CURVE BENT TO
MEASURED DATA
TC = 25 oC
0.1
0.1
125
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
2000
1000
1
100
TC, CASE TEMPERATURE ( C)
Figure 22. Unclamped Inductive
Switching Capability
10
75
o
tAV, TIME IN AVALANCHE (ms)
1
10
DC
80
TC = 25 oC
3
10
2
10
1
10 -5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Single Pulse Maximum
Power Dissipation
Figure 24. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
SINGLE PULSE
RθJC = 3.0 oC/W
8
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FDPC8014S PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
ZθJC (t) = r(t) x RθJc
RθJC = 3.0 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
0.01
SINGLE PULSE
0.001
-5
10
-4
10
-3
-2
10
10
-1
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
9
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8014S.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
-2
IDSS, REVERSE LEAKAGE CURRENT (A)
50
CURRENT (A)
40
30
di/dt = 300 A/us
20
10
0
-10
100
200
300
400
500
-3
TJ = 125 oC
-4
TJ = 100 oC
10
10
-5
10
TJ = 25 oC
-6
10
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 27. FDPC8014S SyncFETTM Body
Diode Reverse Recovery Characteristic
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
10
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-source Voltage
10
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FDPC8014S PowerTrench® Power Clip
Typical Characteristics (continued)
5.10
4.90
0.10 C
2X
PKG
CL
4
5.00
A
4.56
B
4.20
1
1.27
4
2
3
1
3.30
PKG
2.48
2.08
6.10
5.90
CL
1.01
6.60
0.00
0.40
2.65
5
8
0.10 C
2X
0.82
TOP VIEW
3.30
6
5
SEE
DETAIL A
7
8
1.08
1.48
1.53
2.29
1.53
1.01
0.75
0.00
PIN #1
INDICATOR
0.83
1.43
1.98
2.48
RECOMMENDED LAND PATTERN
SIDE VIEW
0.10
0.05
3.15±.05
C A B
C
3.81
1.27
0.51
5
7
6
8
1.57±.05
0.65±.05
NOTES: UNLESS OTHERWISE SPECIFIED
0.65±.05
2.46±.05
1.37±.05
0.53±.05
0.91±.05
0.49±.05
0.48±.05
4
3
2
1
0.51±.05
3.90±.05
4.22±.05
5.00±.05
BOTTOM VIEW
0.10 C
0.08 C
0.80
0.70
0.30
0.20
0.05
0.00
A) DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION, MO-229,
DATED 11/2001.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE
BURRS OR MOLD FLASH. MOLD
FLASH OR BURRS DOES NOT
EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
E) DRAWING FILE NAME: PQFN08KREV2
C
SEATING
PLANE
(SCALE: 2X)
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©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
11
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
Dimensional Outline and Pad Layout
tm
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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Formative / In Design
Datasheet contains the design specifications for product development. Specifications
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Obsolete
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
12
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
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AccuPower™
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®*
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AX-CAP®*
FRFET®
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Global Power Resource
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GreenBridge™
PowerXS™
Build it Now™
TinyBuck®
Programmable Active Droop™
CorePLUS™
Green FPS™
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®
QFET
CorePOWER™
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CROSSVOLT™
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Gmax™
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DEUXPEED®
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™
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Marking Small Speakers Sound Louder
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Saving our world, 1mW/W/kW at a time™
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SignalWise™
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TRUECURRENT®*
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®
Solutions for Your Success™
MicroPak™
®
SPM®
MicroPak2™
Fairchild
®
UHC®
STEALTH™
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Ultra FRFET™
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®
VCX™
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SuperSOT™-6
FAST
®
VisualMax™
OPTOLOGIC
SuperSOT™-8
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®
®
VoltagePlus™
OPTOPLANAR
SupreMOS
FETBench™
SyncFET™
XS™
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