Download Power Semiconductor MG12300D BA1MM Datasheet

Power Module
1200V 300A IGBT Module
MG12300D-BA1MM
RoHS ®
Features
• Ultra low loss
• P
ositive temperature
coefficient
• High ruggedness
• W
ith fast free-wheeling
diodes
• H
igh short circuit
capability
Applications
• SMPS and UPS
• Converter
• Induction heating
• Welder
Agency Approvals
AGENCY
• Inverter
AGENCY FILE NUMBER
E71639
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Max
Unit
Junction-to-Case Thermal
Resistance
Per IGBT
0.07
K/W
Per Inverse Diode
0.15
K/W
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M6)
2.5
5
N·m
RthJC
RthJCD
Weight
Min
Typ
285
g
Values
Unit
V
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
IGBT
VCES
Collector - Emitter Voltage
1200
VGES
Gate - Emitter Voltage
±20
V
450
A
A
IC
TC=25°C
DC Collector Current
ICpuls
Pulsed Collector Current
TC=80°C
310
TC=25°C, tp=1ms
900
TC=80°C, tp=1ms
620
A
Ptot
Power Dissipation Per IGBT
1800
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
AC, t=1min
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
1200
V
TC=25°C
380
A
TC=80°C
260
A
380
A
TJ =45°C, t=10ms, Sine
2260
TJ =45°C, t=8.3ms, Sine
2560
Average Forward Current
RMS Forward Current
IF(RMS)
Non-Repetitive Surge Forward
Current
IFSM
A
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG12300D-BA1MM
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©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 300A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=12mA
5.0
6.2
7.0
V
Collector - Emitter
Saturation Voltage
IC=300A, VGE=15V, TJ=25°C
1.9
IC=300A, VGE=15V, TJ=125°C
2.1
VCE=1200V, VGE=0V, TJ=25°C
0.4
IGBT
VGE(th)
VCE(sat)
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V,VGE=±20V
Qge
Gate Charge
VCC=600V, IC=300A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE=1200V, VGE=0V, TJ=125°C
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=25V, VGE=0V, f =1MHz
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
10
-400
mA
mA
400
3060
nA
nC
1.42
nF
0.94
VCC=600V
IC=300A
RG =3.4Ω
tf
V
2
21.2
Turn - on Delay Time
td(on)
V
VGE=±15V
Inductive Load
TJ =25°C
190
ns
TJ =125°C
220
ns
TJ =25°C
60
ns
TJ =125°C
60
ns
TJ =25°C
460
ns
TJ =125°C
530
ns
TJ =25°C
55
ns
TJ =125°C
75
ns
TJ =25°C
22.4
mJ
TJ =125°C
33.4
mJ
TJ =25°C
19.6
mJ
TJ =125°C
30.6
mJ
Diode
VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
MG12300D-BA1MM
IF=300A , VGE=0V, TJ =25°C
2.0
2.44
IF=300A , VGE=0V, TJ =125°C
1.7
2.20
IF=300A , VR=800V
diF/dt=-1000A/μs
TJ =125°C
410
V
ns
120
A
25
μC
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142
V
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 300A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: T
ypical Transfer characteristics
600
600
500
500
400
TJ =25°C
IC (A)
IC (A)
400
300
TJ =125°C
200
300
200
TJ =125°C
100
0
0
1
0.5
1.5
2.5
2
VCE(sat)˄V˅
3.5
3
0
4
6
8
VGE˄V˅
10
12
14
100
VCC=600V
RG=3.4ohm
VGE=±15V
TJ =125°C
80
Eon
100
VCC=600V
IC=300A
VGE=±15V
TJ =125°C
60
Eon Eoff (mJ)
Eon Eoff (mJ)
2
0
Figure 4: Switching Energy vs. Gate Resistor
250
150
TJ =25°C
100
Figure 3: Switching Energy vs. Collector Current
200
VCE=20V
Eon
40
Eoff
Eoff
50
20
0
0
200
400
600
IC˄A˅
800
0
1000
Figure 5: Switching Times vs. Collector Current
0
5
15
10
RG˄ohm˅
20
25
Figure 6: Switching Times vs. Gate Resistor
4
103
10
td(off)
103
102
td(off)
t (ns)
t (ns)
td(on)
tr
tf
101
0
MG12300D-BA1MM
120 180 240
IC˄A˅
300
360
tf
102
VCC=600V
RG=3.4ohm
VGE=±15V
TJ =125°C
60
td(on)
101
420
tr
0
VCC=600V
IC=300A
VGE=±15V
TJ =125°C
5
10
15 20
25
RG˄ohm˅
30
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©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 300A IGBT Module
Figure 7: Gate Charge characteristics
Figure 8: Typical Capacitances vs. VCE
25
100
VGE =0V
f=1MHz
VCC=600V
IC=300A
TJ =25°C
20
Cies
10
C (nF)
VGE (V)
15
10
Coes
1
Cres
5
0
0
0.8
1.2
Qg˄µC˅
0.4
1.6
0.1
2.0
10
15
20
25
30
35
Figure 10: Short Circuit Safe Operating Area
6000
1000
5000
800
4000
ICsc (A)
1200
600
3000
400
2000
TJ =150°C
TC =25°C
VGE =15V
200
0
0
200
400
TJ =150°C
TC =25°C
VGE =15V
tscİ10µs
1000
0
600 800 1000 1200 1400
VCE˄V˅
Figure 11: Rated Current vs. TC
0
200
400 600 800 1000 1200 1400
VCE˄V˅
Figure 12: Diode Forward Characteristics
600
600
TJ =150°C
VGE ı15V
500
500
400
400
300
300
TJ =125°C
IF (A)
IC(A)
5
VCE˄V˅
Figure 9: Reverse Biased Safe Operating Area
ICpuls (A)
0
200
200
100
100
TJ =25°C
0
0
MG12300D-BA1MM
25
0
50
75 100 125 150 175
TC Case Temperature(°C)
0
0.5
1.0
1.5 2.0 2.5
VF˄V˅
3
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3.5
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 300A IGBT Module
Figure 13: Transient Thermal Impedance of IGBT
Figure 14: Transient Thermal Impedance of Diode
1
1
-1
-1
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-2
10
ZthJC (K/W)
ZthJC (K/W)
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-2
10
10-3
10-3
10-4 -4
-3
-2
-1
10
10
10
10
1
Rectangular Pulse Duration (seconds)
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Dimensions-Package D
Circuit Diagram
M6
1
2.8x0.5
2
8.5
30.0
30.5
3
4
22.0
93.0
6.0
5
6
7
ž6.5
2
28.0
3
28.0
62.0
15.0
6.0
1
4 5
48.0
16.0
7 6
6.0
18
20.0
108.0
Dimensions in mm
MG12300D-BA1MM
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145
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 300A IGBT Module
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12300D-BA1MM
MG12300D-BA1MM
285g
Bulk Pack
60
Part Marking System
Part Numbering System
MG12300 D - B A1 MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
1
3
2
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CIRCUIT TYPE
2x(IGBT+FWD)
CURRENT RATING
PACKAGE TYPE
4
MG12300D-BA1MM
5
6
7
LOT NUMBER
300: 300A
MG12300D-BA1MM
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146
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14