Download Power Semiconductor MG12200D BN2MM Datasheet

Power Module
1200V 200A IGBT Module
MG12200D-BN2MM
RoHS ®
Features
• F
ast switching and short
tail current
igh short circuit
• H
capability, self limiting
short circuit current
• IGBT3 CHIP(Trench+Field
Stop technology)
• V
CE(sat) with positive
temperature coefficient
• F
ree wheeling diodes
with fast and soft reverse
recovery
• Low switching losses
Applications
Agency Approvals
AGENCY
AGENCY FILE NUMBER
• Medical applications
• Motion/servo control
• H
igh frequency switching
application
• UPS systems
E71639
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
TJ op
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Test Conditions
Min
Typ
Max
Unit
150
°C
-40
125
°C
-40
125
°C
AC, t=1min
3000
V
350
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M6)
2.5
5
N·m
Weight
320
g
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
TJ =25°C
1200
V
±20
V
TC=25°C
290
A
TC=80°C
200
A
tp=1ms
400
A
1050
W
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I 2t
TJ =25°C
1200
V
TC=25°C
290
A
TC=80°C
200
A
400
A
TJ =125°C, t=10ms, VR =0V
7750
A2s
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG12200D-BN2MM
www.BDTIC.com/littelfuse
197
1
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 200A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=8mA
5.0
5.8
6.5
V
Collector - Emitter
IC=200A, VGE=15V, TJ=25°C
1.7
Saturation Voltage
IC=200A, VGE=15V, TJ=125°C
1.9
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=200A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=200A
RG =3.6Ω
tf
Fall Time
VGE=±15V
Inductive Load
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
V
V
1
mA
5
mA
400
nA
3.8
Ω
1.9
μC
14
nF
0.5
nF
TJ=25°C
160
ns
TJ=125°C
170
ns
TJ=25°C
40
ns
TJ=125°C
45
ns
TJ=25°C
450
ns
TJ=125°C
520
ns
TJ=25°C
100
ns
TJ=125°C
160
ns
TJ=25°C
10
mJ
TJ=125°C
15
mJ
TJ=25°C
16.5
mJ
TJ=125°C
25
mJ
tpsc≤10μS , VGE=15V, TJ=125°C , VCC=900V
800
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.12
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=200A, VGE=0V, TJ =25°C
1.65
IF=200A, VGE=0V, TJ =125°C
1.65
V
IF=200A, VR=600V
diF/dt=-4000A/µs
TJ=125°C
190
ns
Junction-to-Case Thermal Resistance (Per Diode)
MG12200D-BN2MM
V
36
A
17
mJ
0.2
www.BDTIC.com/littelfuse
2
198
K/W
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 200A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: Typical Output Characteristics
400
400
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
320
TJ =25°C
240
IC (A)
IC (A)
320
160
240
TJ =125°C
160
TJ =125°C
80
80
0
0
0.5
1.0
1.5
2.0
VCE˄V˅
2.5
0
3.0
Figure 3: Typical Transfer characteristics
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
400
100
VCE=600V
IC=200A
VGE=±15V
TJ =125°C
VCE =20V
80
TJ =25°C
240
160
Eon Eoff (mJ)
IC (A)
320
TJ =125°C
80
0
Eon
40
Eoff
20
5
6
7
9
8
VGE˄V˅
10
11
0
12
Figure 5: Switching Energy vs. Collector Current
60
50
20
MG12200D-BN2MM
12 16 20 24 28 32
RG˄Ω˅
8
36
400
350
300
250
Eoff
200
RG=3.6Ω
VGE=±15V
TJ =125°C
150
Eon
100
10
0
0
4
450
VCE=600V
RG=3.6Ω
VGE=±15V
TJ =125°C
40
30
0
Figure 6: Reverse Biased Safe Operating Area
IC (A)
Eon Eoff (mJ)
60
50
0
50 100 150 200 250 300 350 400
IC˄A˅
0
200
400
600 800 1000 1200 1400
VCE˄V˅
www.BDTIC.com/littelfuse
199
3
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 200A IGBT Module
Figure 7: Diode Forward Characteristics
Figure 8: Switching Energy vs. Gate Resistor
24
400
20
Erec (mJ)
320
240
IF (A)
IF=200A
VCE=600V
Tj =125°C
16
12
160
8
TJ =125°C
80
4
TJ =25°C
0
0
0.6
1.2
VF˄V˅
1.8
0
2.4
Figure 9: Switching Energy vs. Forward Current
4
8
12
16 20 24
RG˄Ω˅
28
32 36
Figure 10: Transient Thermal Impedance
1
24
RG=3.6Ω
VCE=600V
Tj =125°C
20
Diode
ZthJC (K/W)
16
Erec (mJ)
0
12
0.1
IGBT
0.01
8
4
0
0
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
50 100 150 200 250 300 350 400
IF (A)
MG12200D-BN2MM
www.BDTIC.com/littelfuse
4
200
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14
Power Module
1200V 200A IGBT Module
Dimensions-Package D
Circuit Diagram
M6
8.5
30.0
30.5
2.8x0.5
22.0
93.0
6.0
ž6.5
2
28.0
3
28.0
62.0
15.0
6.0
1
4 5
48.0
16.0
7 6
6.0
18
20.0
108.0
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12200D-BN2MM
MG12200D-BN2MM
320g
Bulk Pack
60
Part Marking System
Part Numbering System
MG12200 D - B N2 MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
CIRCUIT TYPE
2x(IGBT+FWD)
CURRENT RATING
PACKAGE TYPE
MG12200D-BN2MM
LOT NUMBER
200: 200A
MG12200D-BN2MM
www.BDTIC.com/littelfuse
5
201
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/06/14