Download Power Semiconductor MG06400D BN1MM Datasheet

Power Module
600V IGBT Family
MG06400D-BN1MM Series 400A Dual IGBT
RoHS ®
Features
• Ultra low loss
• Positive temperature
coefficient
• High ruggedness
• High short circuit
capability
Applications
Agency Approvals
AGENCY
• Motor drives
• SMPS and UPS
• Inverter
• Welder
• Converter
• Induction Heating
AGENCY FILE NUMBER
E71639
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max)
TJ op
Operating Temperature
-40
TSTG
Storage Temperature Range
-40
Visol
Insulation Test Voltage
AC, t=1min
CTI
Comparative Tracking Index
Module case exposed to 0.1% ammonium
chloride solution per UL and IEC standards
RthJC
Junction-to-Case Thermal
Resistance
Per IGBT
RthJCD
Junction-to-Case Thermal
Resistance
Per Inverse Diode
Max
Unit
150
°C
150
°C
125
°C
3000
V
350
V
0.09
K/W
0.15
K/W
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M6)
2.5
5
N·m
Weight
310
g
Values
Unit
V
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
IGBT
VCES
Collector - Emitter Voltage
600
VGES
Gate - Emitter Voltage
±20
V
TC=25°C
460
A
TC=50°C
400
A
TC=25°C, tp=1ms
920
A
TC=50°C, tp=1ms
800
A
1400
W
600
V
TC=25°C
400
A
TC=50°C
320
A
570
A
IC
DC Collector Current
ICpuls
Pulsed Collector Current
Ptot
Power Dissipation Per IGBT
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMs)
RMS Forward Current
Non-Repetitive Surge
Forward Current
IFSM
TJ =45°C, t=10ms, Sine
1200
A
TJ =45°C, t=8.3ms, Sine
1320
A
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
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MG06400D-BN1MM
1
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
600V IGBT Family
Electrical Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=8mA
4.5
Collector - Emitter
Saturation Voltage
Ic=400A, VGE=15V, TJ=25°C
5.5
6.5
V
1.95
2.45
V
IC=400A, VGE=15V, TJ=125°C
2.2
1
mA
IGBT
VGE(th)
VCE(sat)
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Intergrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCE=600V, VGE=0V, TJ=25°C
VCE=600V, VGE=0V, TJ=125°C
VCE=0V, VGE=±20V
RG =3Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
VGE=±15V
Inductive Load
Turn - off Energy
mA
1.2
μA
Ω
1.8
μC
18
nF
1.8
nF
1.6
nF
TJ =25°C
195
ns
TJ =125°C
220
ns
TJ =25°C
65
ns
TJ=125°C
80
ns
VCE=25V, VGE=0V, f =1MHz
IC=400A
2
1.2
2.5
VCE=300V, IC=400A , VGE=±15V
VCC=300V
V
TJ =25°C
295
ns
TJ =125°C
350
ns
TJ =25°C
45
ns
TJ=125°C
60
ns
TJ =25°C
6.5
mJ
TJ =125°C
10
mJ
TJ =25°C
9.5
mJ
TJ=125°C
14.5
mJ
Free-Wheeling Diode
IF=400A , VGE=0V,TJ =25°C
1.25
IF=400A , VGE=0V, TJ =125°C
1.2
V
Reverse Recovery Time
IF=400A , VR=300V
249
ns
IRRM
Reverse Recovery Charge
diF/dt=-2000A/μs
214
A
Qrr
Reverse Recovery Charge
TJ =125°C
31
μC
VF
Forward Voltage
Trr
1.6
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MG06400D-BN1MM
2
V
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
600V IGBT Family
Figure 1: Typical Output Characteristics
Figure 2: T
ypical Transfer Characteristics
820
820
700
700
560
560
T Vj =25°C
IC (A)
IC (A)
V CE =20V
420
420
T Vj =125°C
280
280
140
140
T Vj =125°C
0
0
0.5
1
1.5
2.5
2
VCE(sat)˄V˅
0
3.5
3
Figure 3: Switching Energy vs. Collector Current
2
4
6
8
VGE˄V˅
10
12
14
Figure 4: Switching Energy vs. Gate Resistor
36
36
V CC =300V
R G =3ohm
V GE =±15V
T Vj =125°C
24
V CC =300V
IC =400A
V GE =±15V
T Vj =125°C
30
24
Eon Eoff (mJ)
30
Eon Eoff (mJ)
0
T Vj =25°C
18
E off
12
E on
18
E off
12
E on
6
6
0
0
120
240
360 480
IC˄A˅
600 720
0
840
Figure 5: Switching Times vs. Collector Current
0
3
6
9
12
15
RG˄ohm˅
18
21
Figure 6: Switching Times vs. Gate Resistor
1000
1000
td(off)
td(off)
td(on)
100
t (ns)
t (ns)
td(on)
tr
100
tr
tf
tf
10
0
V CC =300V
R G =3ohm
V GE =±15V
T Vj =125°C
80
160
240 320
IC˄A˅
400
480
10
560
V CC =300V
IC =400A
V GE =±15V
T Vj =125°C
0
2
4
6
8
10
RG˄ohm˅
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MG06400D-BN1MM
3
12
14
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
600V IGBT Family
Figure 7: Diode Forward Characteristics
Figure 8: Typical Capacitances vs. VCE
25
100
V CC =300V
IC =400A
T Vj =25°C
20
V GE =0V
f=1MHz
C ies
10
C (nF)
VGE (V)
15
10
C oes
1
C res
5
0
0
800
1200
Qg˄nC˅
400
1600
0.1
2000
0
5
25
30
35
1000
2000
800
1600
ICsc (A)
2400
ICpuls (A)
20
Figure 10: Short Circuit Safe Operating Area
1200
600
1200
400
0
0
15
VCE˄V˅
Figure 9: Reverse Biased Safe Operating Area
200
10
800
T Vj =150°C
T C =25°C
V GE =15V
100
200
T Vj =150°C
T C =25°C
V GE =15V
tsc İ10µs
400
300 400 500 600
VCE˄V˅
0
700
Figure 11: Rated Current vs. TC
0
100
200 300 400
VCE˄V˅
500 600
700
Figure12: Diode Forward Characteristics
600
820
T Vj =150°C
V GE ı15V
500
700
400
560
IC(A)
T Vj =125°C
IF (A)
300
420
200
280
100
140
0
0
T Vj =25°C
25
50
75 100 125 150
TC Case Temperature(°C)
0
175
0
0.5
1.0
1.5 2.0 2.5
V ˄V˅
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MG06400D-BN1MM
4
3
3.5
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
600V IGBT Family
Figure 13: Transient Thermal Impedance of IGBT
Figure 14:Transient Thermal Impedance of Diode
1
1
10-1
-1
10-2
10-3
ZthJC (K/W)
ZthJC (K/W)
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-3
10
-4
10
Duty
0.5
0.2
0.1
0.05
Single Pulse
-2
10
-4
10
10-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Dimensions-Package D
10-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Circuit Diagram and Pin Assignment
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MG06400D-BN1MM
5
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14
Power Module
600V IGBT Family
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG06400D-BN1MM
MG06400D-BN1MM
310g
Bulk Pack
60
Part Marking System
Part Numbering System
MG06400D-BN1MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
MODULE TYPE
G: IGBT
VOLTAGE RATING
06: 600V
WAFER TYPE
CURRENT RATING
PACKAGE TYPE
400: 400A
CIRCUIT TYPE
B: 2x(IGBT+FWD)
D: Package D
www.BDTIC.com/littelfuse
MG06400D-BN1MM
6
©2014 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:09/18/14