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MIG15J503H
TOSHIBA Intelligent Power Module
MIG15J503H
MIG15J503H is an intelligent power module for three-phase
inverter system. The 4th generation low saturation voltage
trench gate IGBT and FRD are connected to a three-phase full
bridge type, and IC by the original high-voltage SOI
(silicon-on-insulator) process drives these directly in response to a
PWM signal. Moreover, since high-voltage level-shifter is built in
high-voltage IC, while being able to perform a direct drive
without the interface with which the upper arm IGBT is
insulated, the drive power supply of an upper arm can be driven
with a bootstrap system, and the simplification of a system is
possible. Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at
Weight: 18 g (typ.)
the time of vector control by current detection resistance of a
lower arm. The protection function builds in Under Voltage
Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is
adopted as a package, and low heat resistance is realized.
Features
•
The 4th generation trench gate thin wafer NPT IGBT is adopted.
•
FRD is built in.
•
The level shift circuit by high-voltage IC is built in.
•
The simplification of a high side driver power supply is possible by the bootstrap system.
•
Short circuit protection, over temperature protection, and the power supply under voltage protection function
are built in.
•
Short circuit protection and over temperature protection state are outputted.
•
The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at
the time of vector control.
•
Low thermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
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2003-10-30
MIG15J503H
Pin Assignment
1
PGND U
2
U
3
VBB U
4
PGND V
5
V
6
Mark side
VBB V
7
PGND W
8
W
9
VCC U
FO U
IN U
IN X
SGND U
BS U
CU
VCC V
FO V
IN V
IN Y
SGND V
BS V
CV
VCC W
FO W
IN W
IN Z
SGND W
BS W
CW
VBB W
30
29
28
26
27
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
Marking
Toshiba logo type
Lot No.
※
MIG15J503H
JAPAN
product number
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2003-10-30
MIG15J503H
Block Diagram
29
IN U
28
IN X
27
VBB U
2
U
1
PGND U
6
VBB V
High
VCC U 30
FO U
3
Side
Under
Under
Voltage
Voltage
Driver
Low Side
Driver
SGND U 26
BS U
25
CU
24
VCC V
23
FO V
22
IN V
21
IN Y
20
Over
Over
Temp
Current
High
Side
Under
Under
Voltage
Voltage
Driver
5
V
Low Side
Driver
SGND V 19
BS V
18
CV
17
VCC W
16
FO W
15
IN W
14
IN Z
13
Over
Over
Temp
Current
4
PGND V
9
VBB W
High
Side
Under
Under
Voltage
Voltage
Driver
8
W
Low Side
Driver
SGND W 12
BS W
11
CW
10
Over
Over
Temp
Current
3
7
PGND W
2003-10-30
MIG15J503H
Pin Description
Pin No.
Symbol
Pin Description
1
PGND U
2
U
3
VBB U
4
PGND V
5
V
6
VBB V
7
PGND W
8
W
9
VBB W
10
CW
W-Phase bootstrap capacitor connecting pin (−)
11
BS W
W-Phase bootstrap capacitor connecting pin (+)
12
SGND W
13
IN Z
W-Phase low-side input pin (negative logic)
14
IN W
W-Phase high-side input pin (negative logic)
15
FO W
W-Phase Diagnosis output pin (open drain output. Wired or
connection can be performed with the diagnosis output pin
of other phase.)
16
VCC W
W-Phase control power supply (+15 V typ.)
17
CV
V-Phase bootstrap capacitor connecting pin (−)
18
BS V
V-Phase bootstrap capacitor connecting pin (+)
19
SGND V
20
IN Y
V-Phase low-side input pin (negative logic)
21
IN V
V-Phase high-side input pin (negative logic)
22
FO V
V-Phase Diagnosis output pin (open drain output. Wired or
connection can be performed with the diagnosis output pin
of other phase.)
23
VCC V
V-Phase control power supply (+15 V typ.)
24
CU
U-Phase bootstrap capacitor connecting pin (−)
25
BS U
U-Phase bootstrap capacitor connecting pin (+)
26
SGND U
27
IN X
U-Phase low-side input pin (negative logic)
28
IN U
U-Phase high-side input pin (negative logic)
29
FO U
U-Phase Diagnosis output pin (open drain output. Wired or
connection can be performed with the diagnosis output pin
of other phase.)
30
VCC U
U-Phase control power supply (+15 V typ.)
U-Phase Power Ground pin (connect a current detecting
resistor between this pin and SGND U pin)
U-Phase output pin
U-Phase high-voltage power supply pin
V-Phase Power Ground pin (connect a current detecting
resistor between this pin and SGND V pin)
V-Phase output pin
V-Phase high-voltage power supply pin
W-Phase Power Ground pin (connect a current detecting
resistor between this pin and SGND W pin)
W-Phase output pin
W-Phase high-voltage power supply pin
W-Phase Signal Ground pin
V-Phase Signal Ground pin
U-Phase Signal Ground pin
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2003-10-30
MIG15J503H
Truth Table
Protection Circuit Detection State
Input
IGBT State
Fault Output
High Side
Under
Voltage
Low Side
Under
Voltage
Short Circuit
Over
Temperature
IN (X) High
Side Arm
IN (X) Low
Side Arm
High Side
Arm
Low Side
Arm
FO (X)
Un-Detecting
Un-Detecting
Un-Detecting
Un-Detecting
H
H
OFF
OFF
OFF
Un-Detecting
Un-Detecting
Un-Detecting
Un-Detecting
H
L
OFF
ON
OFF
Un-Detecting
Un-Detecting
Un-Detecting
Un-Detecting
L
H
ON
OFF
OFF
Un-Detecting
Un-Detecting
Un-Detecting
Un-Detecting
L
L
OFF
OFF
OFF
Detecting
Un-Detecting
Un-Detecting
Un-Detecting
H
H
OFF
OFF
OFF
Detecting
Un-Detecting
Un-Detecting
Un-Detecting
H
L
OFF
OFF
OFF
Detecting
Un-Detecting
Un-Detecting
Un-Detecting
L
H
OFF
OFF
OFF
Detecting
Un-Detecting
Un-Detecting
Un-Detecting
L
L
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting
Un-Detecting
H
H
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting
Un-Detecting
H
L
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting
Un-Detecting
L
H
OFF
OFF
OFF
Un-Detecting
Detecting
Un-Detecting
Un-Detecting
L
L
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting
Un-Detecting
H
H
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting
Un-Detecting
H
L
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting
Un-Detecting
L
H
OFF
OFF
OFF
Detecting
Detecting
Un-Detecting
Un-Detecting
L
L
OFF
OFF
OFF
Un-Detecting
Un-Detecting
Detecting
Un-Detecting
H
H
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Un-Detecting
H
L
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Un-Detecting
L
H
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Un-Detecting
L
L
OFF
OFF
ON
Un-Detecting
Un-Detecting
Un-Detecting
Detecting
H
H
OFF
OFF
ON
Un-Detecting
Un-Detecting
Un-Detecting
Detecting
H
L
OFF
OFF
ON
Un-Detecting
Un-Detecting
Un-Detecting
Detecting
L
H
OFF
OFF
ON
Un-Detecting
Un-Detecting
Un-Detecting
Detecting
L
L
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Detecting
H
H
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Detecting
H
L
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Detecting
L
H
OFF
OFF
ON
Un-Detecting
Un-Detecting
Detecting
Detecting
L
L
OFF
OFF
ON
•
•
The above has indicated a part for single arm.
There is no relevance of operation between arms.
•
When the input of a high side arm and a low side arm is simultaneously set to “L”, IGBT of a high side arm and
a low side arm turns off.
FO (X) terminal is turned on in the meantime at the same time, as for the output of Phase which detected the
load short circuit state, it will maintain the OFF between 10 ms, if a Short Current Protection detects a Short
Current state. Although an incoming signal is reset by an upper arm and a lower arm being simultaneously set
to “H” in the back in this state, OFF of an output and FO (X) are maintained between 10 ms. Although FO (X) is
turned off when FO (X) terminal for 10 ms will not be in the simultaneous “H” state of an upper arm and a
lower arm in during ON time, an output maintains OFF. This release is made by an upper arm and a lower arm
being simultaneously set to “H”.
(Short current protection is a non-repetition. When FO (X) turns on, please turn off the input of all phase.)
If an Over Temperature Protection circuit detects an Over Temperature state, while the output of Phase which
detected the Over Temperature Protection state is turned off, FO (X) terminal turns it on. This state will return
operation, if temperature falls to Over Temperature Protection detection return temperature (over temperature
protection temperature-over temperature protection hysteresis).
•
•
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2003-10-30
MIG15J503H
Absolute Maximum Rating (Tj = 25°C)
Characteristics
Power supply voltage
Symbol
Rating
VBB
450
VBB (surge)
500
VCC
20
Unit
V
VBS
20
VCES
600
V
Each collector current (DC)
IC
±15
A
Each collector current (PEAK)
ICP
±30
A
Input voltage
VIN
5.5
V
Fault output supply voltage
VFO
20
V
Fault output current
IFO
15
mA
VPGND-SGND
±5
V
dv/dt
20
kV/µs
PC
43
W
PC
25
W
TOPE
−20 to 100
°C
Tj
150
°C
Tstg
−40 to 125
°C
VISO
2500 (1 min)
Vrms

0.5
N· m
Collector-emitter voltage
PGND-SGND voltage difference
Output voltage rate of change
Collector power dissipation
(per 1 IGBT chip) (Tc = 25°C)
Collector power dissipation
(per 1 FRD chip) (Tc = 25°C)
Operating temperature
Junction temperature
Storage temperature
Isolation voltage
(60 Hz sinusoidal, AC)
Screw torque (M3)
(Note 1)
Note 1: Although a junction temperature is 150°C the own maximum moment of a power chips which it builds in this
module, the average operation junction temperature for carrying out safe operation specifies it as 125°C or
less.
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2003-10-30
MIG15J503H
Electrical Characteristics (Tj = 25°C)
Characteristics
Operating power supply voltage
Symbol
Test Condition
Min
Typ.
Max
VBB

50
300
400
VCC

13.5
15
17
VBS

13.5
15
17
VBB = 400 V, VIN = 5 V (1 arm)


1
VCC = 15 V, VIN = 5 V (1 arm)

0.8
1.5
VCC = 15 V, VIN = 0 V (1 arm)

1.1
1.5
VCC = 15 V, VIN = 5 V (1 arm)

330
600
VCC = 15 V, VIN = 0 V (1 arm)

470
1000
VIH
VIN = “H”
2.2
3.0
3.7
VIL
VIN = “L”
2.2
3.0
3.7
IIH
VCC = 15 V, VIN = 5 V
−30
−5
0
IIL
VCC = 15 V, VIN = 0 V
−60
−30
−15
IBB
Current dissipation
ICC
IBS
Input voltage
Input current
Unit
V
mA
µA
V
µA
VsatU
VCC = 15 V, VBS = 15 V, IC = 15 A,
upper arm

1.8
2.3
VsatL
VCC = 15 V, IC = 15 A, lower arm

1.8
2.3
VFU
IF = 15 A, upper arm

1.4
2.0
VFL
IF = 15 A, lower arm

1.4
2.0
Fault output voltage
VFO
IFO = 5 mA

0.8
1.2
V
Short current protection voltage
VR
Short current protection
1.16
1.28
1.41
V
Short current protection delay time
VR t d
Short current protection
1.0
1.5
2.0
µs
Fault output pulse width
VR t h
Short current protection

10

ms
Over temperature protection
TSD
Over temperature protection
150
165
200
°C
IGBT saturation voltage
FRD forward voltage
(Note 2)
V
V
∆TSD
Over temperature protection return

20

°C
Under voltage protection
VBSUVD
Upper arm under voltage protection
10.0
11.0
12.0
V
Under voltage protection recovery
VBSUVR
Upper arm under voltage protection
recovery
10.5
11.5
12.5
V
Under voltage protection
VCCUVD
Lower arm under voltage protection
10.5
11.5
12.5
V
Under voltage protection recovery
VCCUVR
Lower arm under voltage protection
recovery
11.0
12.0
13.0
V

0.5

µs

0.04
0.08
µs

0.5
0.9
µs

0.5

µs

0.09
0.13
µs
Over temperature protection hys.
IGBT turn-on propagation delay time
IGBT rise time
IGBT turn-on time
IGBT turn-off propagation delay time
IGBT fall time
IGBT turn-off time
tdON
tr
tON
tdOFF
tf
VBB = 300 V,
VCC = 15 V,
VBS = 15 V,
IC = 15 A,
inductive load
(Note 3)
tOFF

0.6
1.0
µs

0
300
ns
IGBT vertical arm turn-on, a turn-off
propagation delay time lag
tONH −
tOFFL
VBB = 300 V, VCC = 15 V, VBS = 15 V,
IC = 15 A, inductive load
(include each phase)
IGBT vertical arm turn-on, a turn-off
propagation delay time lag
tOFFL −
tONH
VBB = 300 V, VCC = 15 V, VBS = 15 V,
IC = 15 A, inductive load
(include each phase)

0
300
ns
tdead
VBB = 300 V, VCC = 15 V, VBS = 15 V,
IC = 15 A, inductive load
1


µs
trr
VBB = 300 V, VCC = 15 V, VBS = 15 V,
IF = 15 A
(Note 3)

100

ns
Transistor stage


2.9
Diode stage


5.0
Daed time
FRD reverse recovery time
Thermal resistance
Rth (j-c)
7
°C/W
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MIG15J503H
Note 2: VR measurement circuit
U-Phase
V-Phase
15 V
5V
15 V
5V
30 VCC U
PGND U 1
29 Fo U
Fo U
23 VCC V
PGND V 4
22 Fo V
VR
Fo V
26 SGND U
VR
19 SGND V
W-Phase
Timing Chart
15 V
5V
VR
16 VCC W
Fo W
PGND W 7
15 Fo W
VR
0V
VR
12 SGND W
Fo
VR is measured by giving the sweep voltage from the outside like the above-mentioned.
When the overcurrent detection value is set by an actual application, it is necessary to consider the
resistance of the internal bonding wire.
The resistance of the internal bonding wire is 11 mΩ.
Note 3: Switching waveform
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2003-10-30
MIG15J503H
The Example of an Application Circuit (in the case of not insulating with a control side)
3
5V
VCC U
FO U
IN U
IN X
30
29
28
27
SGND U
26
+
BS U
場
CONTROL CIRCUIT
CU
VCC V
FO V
IN V
IN Y
SGND V
+ BS V
CV
VCC W
FO W
IN W
IN Z
SGND W
+ BS W
Under Under
Volt
Volt
age
age
Over
Temp
25
High
Side
Driver
Under Under
Volt
Volt
age
age
20
19
Over
Temp
18
High
Side
Driver
Under Under
Volt
Volt
age
age
13
12
11
V
Over
Curre
nt
+
PGND V
4
9 V
BB W
16
14
M
5
Low
Side
Driver
17
15
PGND U
1
VBB V
23
21
U
6
24
22
2
Low
Side
Driver
Over
Curre
nt
VBB U
Over
Temp
High
Side
Driver
8
Low
Side
Driver
Over
Curre
nt
W
PGND W
7
10
CW
+
15 V
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2003-10-30
High
voltage
MIG15J503H
IC – VCE
IC – VCE
40
40
Common emitter
Common emitter
35 Tc = 100°C
20
30
25
Collector current
VD = 17 V
(A)
15 V
IC
(A)
25
Collector current
30
IC
35 Tc = 25°C
13 V
15
10
5
15 V
VD = 17 V
20
13 V
15
10
5
0
0
0.5
1
1.5
2
2.5
0
0
3
0.5
Collector-emitter voltage VCE (V)
1
VCE (sat) – Tc
3
IF – VF
Common cathode
35
IC = 15 A
2
(A)
3
30
IF
VCC = 15 V
25
Forward current
Collector-emitter saturation voltage
VCE (sat) (V)
2.5
40
Common emitter
1
20
15
100°C
10
Tc = 25°C
1.5 A
5
0
0
25
50
75
100
0
0
125
0.5
Case temperature Tc (°C)
1
1.5
2
Forward voltage
High Side Arm
Switching Time – IC
VF
2.5
3
(V)
High Side Arm
Switching Time – IC
10
10
Common emitter
Common emitter
VBB = 300 V
VCC = VBS = 15 V
VBB = 300 V
VCC = VBS = 15 V
L-Load
L-Load
1
(µs)
Tc = 25°C
toff
Switching time
(µs)
2
Collector-emitter voltage VCE (V)
4
Switching time
1.5
ton
tf
0.1
Tc = 100°C
toff
1
ton
tf
0.1
tr
tr
0.01
0.1
1
Collector current
10
IC
0.01
0.1
100
(A)
1
Collector current
10
10
IC
100
(A)
2003-10-30
MIG15J503H
Low Side Arm
Switching Time – IC
Low Side Arm
Switching Time – IC
10
10
Common emitter
Common emitter
VBB = 300 V
VCC = VBS = 15 V
VBB = 300 V
VCC = VBS = 15 V
(µs)
L-Load
Tc = 25°C
toff
1
Switching time
Switching time
(µs)
L-Load
ton
tf
0.1
Tc = 100°C
toff
1
ton
tf
0.1
tr
0.01
0.1
1
tr
10
Collector current
IC
0.01
0.1
100
1
Collector current
(A)
High Side Arm
(A)
trr, Irr – IF
10
10
Common cathode
Peak reverse recovery current Irr (×10 A)
Reverse recovery time trr (µs)
Common cathode
Peak reverse recovery current Irr (×10 A)
Reverse recovery time trr (µs)
IC
100
High Side Arm
trr, Irr – IF
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 25°C
1
Irr
0.1
trr
0.01
0.1
1
10
Forward current
IF
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 100°C
1
Irr
trr
0.1
0.01
0.1
100
(A)
1
10
Forward current
Low Side Arm
IF
100
(A)
Low Side Arm
trr, Irr – IF
trr, Irr – IF
10
10
Common cathode
Peak reverse recovery current Irr (×10 A)
Reverse recovery time trr (µs)
Common cathode
Peak reverse recovery current Irr (×10 A)
Reverse recovery time trr (µs)
10
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 25°C
1
Irr
0.1
0.01
0.1
trr
1
Forward current
10
IF
VBB = 300 V
VCC = VBS = 15 V
L-Load
Tc = 100°C
1
Irr
trr
0.1
0.01
0.1
100
1
Forward current
(A)
11
10
IF
100
(A)
2003-10-30
MIG15J503H
High Side Arm
High Side Arm
Eon, Eoff – IC
Eon, Eoff – IC
1
10
Common emitter
Common emitter
VBB = 300 V
VCC = VBS = 15 V
VBB = 300 V
VCC = VBS = 15 V
L-Load
Eon
(mJ)
Tc = 25°C
0.1
Eoff
Switching loss
Switching loss
(mJ)
L-Load
0.01
Tc = 100°C
1
Eon
0.1
Eoff
0.001
0.1
1
10
Collector current
IC
0.01
0.1
100
1
(A)
Collector current
Low Side Arm
(A)
Eon, Eoff – IC
10
10
Common emitter
Common emitter
VBB = 300 V
VCC = VBS = 15 V
VBB = 300 V
VCC = VBS = 15 V
L-Load
L-Load
(mJ)
Tc = 25°C
1
Switching loss
(mJ)
IC
100
Low Side Arm
Eon, Eoff – IC
Switching loss
10
Eon
0.1
Tc = 100°C
1
Eon
0.1
Eoff
Eoff
0.01
0.1
1
10
Collector current
IC
0.01
0.1
100
1
(A)
Collector current
High Side Arm
IC
100
(A)
Low Side Arm
UVD, UVR – Tc
UVD, UVR – Tc
Under voltage protection UVD, UVR
(V)
20
(V)
20
Under voltage protection UVD, UVR
10
16
Reset level UVR
12
Trip level UVD
8
4
0
0
25
50
75
100
16
Reset level UVR
12
Trip level UVD
8
4
0
0
125
Case temperature Tc (°C)
25
50
75
Case temperature Tc
12
100
125
(°C)
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MIG15J503H
VR – Tc
rth (t) – tw
300
100
1.6
Transient thermal impedance
rth (t) (°C/W)
Short current protection voltage VR
(V)
2
VD = 13, 15, 17 V
1.2
0.8
0.4
0
0
25
50
75
100
10
Case temperature Tc (°C)
Diode
IGBT
1
0.1
0.01
0.001
0.0001
125
Tc = 25°C
0.001
0.01
0.1
Pulse width
13
1
tw
10
100
(s)
2003-10-30
MIG15J503H
Package Dimensions: TOSHIBA 2-63A1A
Unit: mm
Weight: 18 g (typ.)
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2003-10-30
MIG15J503H
RESTRICTIONS ON PRODUCT USE
030619EBA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2003-10-30