Download NDT3055L.pdf

August 1998
NDT3055L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V,
RDS(ON) = 0.120 Ω @ VGS = 4.5 V.
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance, and withstand high energy pulse
in the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such as
DC motor control and DC/DC conversion where fast
switching, low in-line power loss, and resistance to
transients are needed.
SuperSOTTM-3
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SuperSOTTM-8
SuperSOTTM-6
D
D
SO-8
D
D
S
S
D
SOT-223
SOIC-16
SOT-223
D
G
G
S
SOT-223*
G
G
S
(J23Z)
Absolute Maximum Ratings
TA = 25oC unless otherwise noted
Symbol
Parameter
NDT3055L
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Maximum Drain Current - Continuous
4
A
(Note 1a)
- Pulsed
PD
25
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
3
W
1.3
1.1
-65 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
* Order option J23Z for cropped center drain lead.
© 1998 Fairchild Semiconductor Corporation
NDT3055L Rev.A1
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
V
∆BVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
o
mV/o C
55
TJ =125°C
ON CHARACTERISTICS
1
µA
50
µA
100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)/∆TJ
Gate Threshold Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 oC
1
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 4 A
VGS = 4.5 V, ID = 3.7 A
On-State Drain Current
VGS = 5 , VDS = 10 V
gFS
Forward Transconductance
VDS = 5 V, ID = 4 A
2
V
mV /oC
-4
TJ =125°C
ID(ON)
1.6
0.07
0.1
0.125
0.18
0.103
0.12
10
Ω
A
7
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25, VGS = 0 V,
f = 1.0 MHz
345
pF
110
pF
30
pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 25, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 40 V, ID = 4 A,
VGS = 10 V
5
20
ns
7.5
20
ns
20
50
ns
7
20
ns
13
20
nC
1.7
nC
3.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A
0.8
(Note 2)
2.5
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
a. 42oC/W when mounted on a 1 in2 pad of
b. 95oC/W when mounted on a
2oz Cu.
pad of 2oz Cu.
0.066 in2
c. 110oC/W when mounted on a 0.00123
in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDT3055L Rev.A1
Typical Electrical Characteristics
2
VGS= 10V
6.0V
20
R DS(ON) , NORMALIZED
5.0V
4.5V
15
4.0V
10
3.5V
5
3.0V
0
0
1
2
3
4
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
25
1.8
VGS = 4.0V
1.6
4.5V
5.0V
1.4
6.0V
1.2
8.0V
10V
1
0.8
5
0
5
10
15
I D, DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
0.28
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 2A
I D = 4.0 A
VGS = 10 V
1.4
1.2
1
0.8
0.6
-50
0.24
0.2
0.16
TA = 125°C
0.12
0.08
25°C
0.04
0
-25
0
25
50
75
100
125
150
2
4
Figure 3. On-Resistance Variation
with Temperature.
8
10
Figure 4. On-Resistance Variation with
Gate-to- Source Voltage.
10
30
8
IS , REVERSE DRAIN CURRENT (A)
TJ = -55°C
25°C
125°C
VDS = 5V
ID , DRAIN CURRENT (A)
6
V GS , GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE (°C)
6
4
2
0
25
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.6
20
1
1.5
2
2.5
3
3.5
4
4.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
10 V GS = 0V
1
TA = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Current and
Temperature.
NDT3055L Rev.A1
Typical Electrical Characteristics (continued)
I D = 4A
500
VDS = 10V
30V
8
CAPACITANCE (pF)
VGS , GATE-SOURCE VOLTAGE (V)
1000
10
40V
6
4
Ciss
200
Coss
100
50
2
0
Crss
f = 1 MHz
VGS = 0V
20
0
2
4
6
8
10
12
10
0.1
14
0.3
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1m
10m
10
1s
10
s
DC
0.3
VGS = 10V
SINGLE PULSE
R θJA = 110o C/W
TA = 25°C
0.2
0.5
0m
0u
30
60
SINGLE PULSE
RθJA =110°C/W
TA = 25°C
s
s
60
POWER (W)
N)
S(O
RD
1
s
s
40
20
1
2
5
10
30
0
0.001
60 100
0.01
VDS , DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
300
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID , DRAIN CURRENT (A)
10
IT
LIM
3
0.01
0.1
10
80
10
0.03
4
Figure 8. Capacitance Characteristics.
50
0.1
1
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
R θJA (t) = r(t) * R θJA
R θJA = 110 °C/W
P(pk)
0.01
t1
0.005
Single Pulse
0.002
0.001
0.0001
t2
TJ - TA = P * R JA (t)
θ
Duty Cycle, D = t1 / t 2
0.001
0.01
0.1
1
10
100
300
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
NDT3055L Rev.A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.