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FOR IMMEDIATE RELEASE
No. 2638
Product Inquiries
High Frequency Device Marketing Sect.
Mitsubishi Electric Corporation
Tel +81-3-3218-3014
[email protected]
http://www.MitsubishiElectric.com/semiconductors/
Media Contact
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-3380
[email protected]
http://www.MitsubishiElectric.com/news/
Mitsubishi Electric Develops C-band Gallium Nitride High-Electron
Mobility Transistors for Satellite Earth Stations
Tokyo, November 29, 2011 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has
developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz)
amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of
an industry-leading 100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012.
Left: MGFC50G5867
Right: MGFC47G5867
Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters. In
recent years, however, Gallium Nitride (GaN) amplifiers have become increasingly popular due to their high
breakdown-voltage and power density, high saturated electron speed and ability to contribute to power
saving and the downsizing of power transmitter equipment. Mitsubishi Electric first began sample shipments
of high-output GaN HEMT amplifiers for C-band space application in March 2010.
High output power, efficiency and high-voltage operation
- 100 W or 50 W output power
- More than 43% of power added efficiency
- 40 V high-voltage operation
Low Distortion
- Output power meeting 3rd-order Inter Modulation (IM3) = -25dBc of 46dBm
- Internally impedance- matched
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Fig. Example of simplified schematic of amplifier
GaAs HFET 1（conventionl）
25W
HFET
Input
25W
HFET
25W
HFET
GaN HEMT
50W
HFET
MGFC50G5867
50W
HFET
Input
Output
100W
50W
HFET
25W
HFET
50W
HEMT
100W
HEMT
100W
HEMT
Output
100W
MGFC47G5867
50W
HFET
1 Heterostructure Field Effect Transistor
Other Features
Operating
Conditions
Frequency
Output Power of
3dB Compression
Linear Power
Gain
Power Added
Efficiency
VDS 2
IDQ 3
P3dB
(Typ.)
Glp 4
(Typ.)
PAE5
(Typ.)
MGFC50G5867
MGFC47G5867
40 V
40 V
1.15 A
0.58 A
5.8~6.7 GHz （C band）
50 dBm
47 dBm
(100 W)
(50 W)
10 dB
10 dB
43 %
45 %
2
Drain to Source Voltage
Quiescent Drain Current
4
@ frequency = 6.4 GHz
5
Power Added Efficiency (@P3dB, frequency = 6.4 GHz)
3
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About Mitsubishi Electric
With 90 years of experience in providing reliable, high-quality products to both corporate clients and general
consumers all over the world, Mitsubishi Electric Corporation (TOKYO: 6503) is a recognized world leader
in the manufacture, marketing and sales of electrical and electronic equipment used in information
processing and communications, space development and satellite communications, consumer electronics,
industrial technology, energy, transportation and building equipment. The company recorded consolidated
group sales of 3,645.3 billion yen (US$ 43.9 billion*) in the fiscal year ended March 31, 2011. For more
information visit http://www.MitsubishiElectric.com
*At an exchange rate of 83 yen to the US dollar, the rate given by the Tokyo Foreign Exchange
Market on March 31, 2011
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