Download PNP Bipolar Transistor

MMBT4403WT1G
Switching Transistor
PNP Silicon
Features
 Moisture Sensitivity Level: 1
 ESD Rating: Human Body Model; 4 kV,
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Machine Model; 400 V
 These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Symbol
Value
Unit
Collector -- Emitter Voltage
Rating
VCEO
--40
Vdc
Collector -- Base Voltage
VCBO
--40
Vdc
Emitter -- Base Voltage
VEBO
--5.0
Vdc
IC
--600
mAdc
Collector Current -- Continuous
2
EMITTER
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR--5 Board
TA = 25C
Thermal Resistance,
Junction--to--Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
150
mW
RθJA
833
C/W
TJ, Tstg
-- 55 to +150
C
2
SC-- 70
CASE 419
STYLE 3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2T MG
G
1
2T
M
G
= Specific Device Code
= Date Code
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT4403WT1G
SC--70
(Pb--Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 3
1
Publication Order Number:
MMBT4403WT1/D
MMBT4403WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector -- Emitter Breakdown Voltage (Note 1) (IC = --1.0 mAdc, IB = 0)
V(BR)CEO
--40
--
Vdc
Collector -- Base Breakdown Voltage (IC = --0.1 mAdc, IE = 0)
V(BR)CBO
--40
--
Vdc
Emitter -- Base Breakdown Voltage (IE = --0.1 mAdc, IC = 0)
V(BR)EBO
--5.0
--
Vdc
Base Cutoff Current (VCE = --35 Vdc, VEB = --0.4 Vdc)
IBEV
--
--0.1
mAdc
Collector Cutoff Current (VCE = --35 Vdc, VEB = --0.4 Vdc)
ICEX
--
--0.1
mAdc
30
60
100
100
20
---300
--
---
--0.4
--0.75
--0.75
--
--0.95
--1.3
fT
200
--
MHz
Collector--Base Capacitance (VCB = --10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
8.5
pF
Emitter--Base Capacitance (VBE = --0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
--
30
pF
Input Impedance (IC = --1.0 mAdc, VCE = --10 Vdc, f = 1.0 kHz)
hie
1.5
15
kΩ
Voltage Feedback Ratio (IC = --1.0 mAdc, VCE = --10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10-- 4
Small -- Signal Current Gain (IC = --1.0 mAdc, VCE = --10 Vdc, f = 1.0 kHz)
hfe
60
500
--
Output Admittance (IC = --1.0 mAdc, VCE = --10 Vdc, f = 1.0 kHz)
hoe
1.0
100
mmhos
(VCC = --30 Vdc, VEB = --2.0 Vdc,
IC = --150 mAdc, IB1 = --15 mAdc)
td
--
15
tr
--
20
(VCC = --30 Vdc, IC = --150 mAdc,
IB1 = IB2 = --15 mAdc)
ts
--
225
tf
--
30
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = --0.1 mAdc, VCE = --1.0 Vdc)
(IC = --1.0 mAdc, VCE = --1.0 Vdc)
(IC = --10 mAdc, VCE = --1.0 Vdc)
(IC = --150 mAdc, VCE = --2.0 Vdc) (Note 1)
(IC = --500 mAdc, VCE = --2.0 Vdc) (Note 1)
hFE
Collector -- Emitter Saturation Voltage (Note 1)
(IC = --150 mAdc, IB = --15 mAdc)
(IC = --500 mAdc, IB = --50 mAdc)
VCE(sat)
Base -- Emitter Saturation Voltage (Note 1)
(IC = --150 mAdc, IB = --15 mAdc)
(IC = --500 mAdc, IB = --50 mAdc)
VBE(sat)
--
Vdc
Vdc
SMALL-- SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product (IC = --20 mAdc, VCE = --10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
- 30 V
- 30 V
+2 V
0
- 16 V
200 Ω
< 2 ns
+14 V
0
1.0 kΩ
10 to 100 ms,
DUTY CYCLE = 2%
200 Ω
< 20 ns
CS* < 10 pF
1.0 kΩ
- 16 V
1.0 to 100 ms,
DUTY CYCLE = 2%
+ 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn--On Time
Figure 2. Turn--Off Time
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2
CS* < 10 pF
MMBT4403WT1G
TRANSIENT CHARACTERISTICS
25C
100C
30
Ceb
VCC = 30 V
IC/IB = 10
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
5.0
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.1
30
50
70
100
200
Figure 3. Capacitances
Figure 4. Charge Data
300
500
100
IC/IB = 10
70
70
VCC = 30 V
IC/IB = 10
50
50
20
t r , RISE TIME (ns)
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
30
20
10
10
7.0
7.0
10
20
30
50
70
100
200
300
5.0
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn--On Time
Figure 6. Rise Time
200
IC/IB = 10
t s, STORAGE TIME (ns)
t, TIME (ns)
30
20
IC, COLLECTOR CURRENT (mA)
100
5.0
10
REVERSE VOLTAGE (VOLTS)
100
IC/IB = 20
70
50
IB1 = IB2
ts = ts - 1/8 tf
30
20
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
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3
300
500
300
500
MMBT4403WT1G
SMALL--SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = --10 Vdc, TA = 25C; Bandwidth = 1.0 Hz
10
10
8
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1 kHz
IC = 1.0 mA, RS = 430 Ω
IC = 500 mA, RS = 560 Ω
IC = 50 mA, RS = 2.7 kΩ
IC = 100 mA, RS = 1.6 kΩ
6
4
2
6
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10
20
50
IC = 50 mA
100 mA
500 mA
1.0 mA
0
100
50
100
200
500
1k
2k
5k
10 k 20 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50 k
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high-- gain and a low-- gain unit were selected from the MMBT4403LT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
100 k
700
50 k
hfe, CURRENT GAIN
500
300
200
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
70
50
30
hie , INPUT IMPEDANCE (OHMS)
1000
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
20 k
10 k
5k
2k
1k
500
200
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
5.0 7.0 10
0.1
0.2
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
2.0
3.0
5.0 7.0
10
Figure 11. Input Impedance
500
10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
hoe , OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10- 4 )
0.5 0.7 1.0
IC, COLLECTOR CURRENT (mAdc)
20
0.1
0.3
100
50
20
5.0
2.0
1.0
0.1
5.0 7.0 10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
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4
5.0 7.0 10
MMBT4403WT1G
STATIC CHARACTERISTICS
h FE , NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125C
25C
1.0
- 55C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
0
COEFFICIENT (mV/ C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
0.1 0.2
0.5
0.5
1.0
1.5
2.0
VCE(sat) @ IC/IB = 10
0
θVC for VCE(sat)
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
2.5
0.1 0.2
500
Figure 16. “On” Voltages
θVS for VBE
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
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5
500
MMBT4403WT1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
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MMBT4403WT1/D