Download TIP110

TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
TIP111, TIP112, TIP116, and TIP117 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
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Designed for general-purpose amplifier and low-speed switching
applications.
Features
•High DC Current Gain hFE = 2500 (Typ) @ IC
= 1.0 Adc
•Collector-Emitter Sustaining Voltage - @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) - TIP110, TIP115
= 80 Vdc (Min) - TIP111, TIP116
= 100 Vdc (Min) - TIP112, TIP117
•Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC
= 2.0 Adc
•Monolithic Construction with Built-in Base-Emitter Shunt Resistors
•Pb-Free Packages are Available*
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 1
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1
2
TIP11xG
AYWW
3
TIP11x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 6
1
Publication Order Number:
TIP110/D
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117
Unit
VCEO
60
80
100
Vdc
Collector-Base Voltage
VCB
60
80
100
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
2.0
4.0
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
50
0.4
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy - Figure 13
E
25
mJ
Collector Current - Continuous
- Peak
Operating and Storage Junction
TJ, Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RqJC
2.5
°C/W
Thermal Resistance, Junction-to-Ambient
RqJA
62.5
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ORDERING INFORMATION
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Device
TIP110
TIP110G
Package
Shipping
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TO-220
50 Units / Rail
TO-220
(Pb-Free)
50 Units / Rail
TIP111
TIP111G
TIP112
TIP112G
TIP115
TIP115G
TIP116
TIP116G
TIP117
TIP117G
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2
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
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www.BDTIC.com/ON
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
-
-
2.0
2.0
2.0
-
1.0
1.0
1.0
-
2.0
1000
500
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112 ,TIP117
ICEO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
mAdc
IEBO
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
hFE
-
Collector-Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
-
2.5
Vdc
Base-Emitter On Voltage
(IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
-
2.8
Vdc
hfe
25
-
-
-
200
100
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
pF
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
PD, POWER DISSIPATION (WATTS)
TA TC
3.0 60
2.0 40
TC
1.0 20
TA
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
Figure 1. Power Derating
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3
140
160
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
4.0
VCC
-30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
ts
IB1 = IB2
TJ = 25°C
2.0
RC
SCOPE
t, TIME (s)
μ
TUT
V2
approx
+8.0 V
RB
D1
51
0
V1
approx
-12 V
≈ 8.0 k
≈ 60
+4.0 V
25 ms
tr
0.6
0.4
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tf
1.0
0.8
0.2
0.04 0.06
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
0.3
0.02
4.0
Figure 3. Switching Times
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.01
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SINGLE PULSE
0.01
0.01
2.0
0.2
0.1
0.03
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
D = 0.5
0.2
0.07
0.05
td @ VBE(off) = 0
PNP
NPN
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
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4
20
50
100
200
500
1.0 k
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE-REGION SAFE-OPERATING AREA
10
4.0
1ms
5ms
2.0
1.0
TJ = 150°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.1
1.0
TIP115
TIP116
TIP117
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
10
4.0
2.0
TIP110
TIP111
TIP112
CURVES APPLY BELOW
RATED VCEO
0.1
1.0
10
40 60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 150°C
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
1.0
10
60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. TIP115, 116, 117
Figure 6. TIP110, 111, 112
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T J(pk) = 150°C;
T C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
TC = 25°C
C, CAPACITANCE (pF)
100
70
50
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30
Cob
Cib
20
PNP
NPN
10
0.04 0.06 0.1
0.2 0.4 0.6 1.0
2.0 4.0 6.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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5
20
40
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
NPN
TIP110, 111, 112
PNP
TIP115, 116, 117
6.0 k
6.0 k
TJ = 125°C
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
0.1
0.2
1.0
0.4 0.6
IC, COLLECTOR CURRENT (AMP)
2.0
3.0 k
25°C
2.0 k
-55°C
1.0 k
800
600
400
300
0.04 0.06
4.0
VCE = 3.0 V
TJ = 125°C
4.0 k
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
4.0 k
VCE = 3.0 V
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
3.4
3.0
TJ = 25°C
IC =
0.5 A
1.0 A
4.0 A
2.0 A
2.6
2.2
TJ = 25°C
3.0
2.6
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.2
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1.8
1.4
1.0
0.6
0.1
3.4
0.2
0.5
1.0 2.0
5.0 10
IB, BASE CURRENT (mA)
20
50
100
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0 2.0
5.0 10
IB, BASE CURRENT (mA)
20
50
100
Figure 9. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
VBE(sat) @ IC/IB = 250
1.4
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1.0
2.0
0.2
0.04 0.06
4.0
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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6
2.0
4.0
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
PNP
TIP115, 116, 117
+0.8
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
NPN
TIP110, 111, 112
*APPLIES FOR IC/IB ≤ hFE/3
0
-0.8
-1.6
25°C to 150°C
*qVC for VCE(sat)
-2.4
-55°C to 25°C
25°C to 150°C
-3.2
qVC for VBE
-55°C to 25°C
-4.0
-4.8
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
+0.8
*APPLIES FOR IC/IB ≤ hFE/3
0
-0.8
-1.6
25°C to 150°C
*qVC for VCE(sat)
-55°C to 25°C
-2.4
25°C to 150°C
-3.2
-4.0
qVC for VBE
-4.8
0.04 0.06
-55°C to 25°C
0.1
IC, COLLECTOR CURRENT (AMP)
0.2
0.4 0.6
1.0
2.0
4.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
105
REVERSE
104
103
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
VCE = 30 V
102
100
100°C
103
VCE = 30 V
102
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TJ = 150°C
101
25°C
10-1
-0.6 -0.4 -0.2
0
101
100
TJ = 150°C
100°C
25°C
10-1
-0.6 -0.4 -0.2
+0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
TEST CIRCUIT
tw ≈ 3.5 ms (SEE NOTE A)
100 mH
RBB1
TUT
2kW
50 W
VBB1 = 10 V
+
-
+
-
RBB2
100 W
50 W
VBB2 = 0
+0.2 +0.4 +0.6 +0.8 +1.0 +1.2 +1.4
Figure 12. Collector Cut‐Off Region
VOLTAGE AND CURRENT WAVEFORMS
INPUT
VOLTAGE
MJE254
0
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
VCE MONITOR
INPUT
FORWARD
104
0V
-5 V
100 ms
VCC = 20 V
IC
MONITOR
COLLECTOR
CURRENT
RS =
0.1 W
0.71 A
0V
VCER
COLLECTOR
VOLTAGE
20 V
VCE(sat)
Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.
Figure 13. Inductive Load Switching
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7
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
-TB
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
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