Download MJH11017G

MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Preferred Device
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
•
•
•
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
Pb−Free Packages are Available*
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15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
NPN
PNP
COLLECTOR 2
COLLECTOR 2
BASE
1
BASE
1
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EMITTER 3
MJH11018
MJH11020
MJH11022
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCEO
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
15
30
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
150
1.2
W
W/_C
TJ, Tstg
–65 to
+150
_C
Symbol
Max
Unit
ORDERING INFORMATION
RqJC
0.83
_C/W
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Collector Current
− Continuous
− Peak (Note 1)
Operating and Storage Junction Temperature
Range
Max
EMITTER 3
MJH11017
MJH11019
MJH11021
Unit
Vdc
150
200
250
MARKING
DIAGRAM
Vdc
150
200
250
1
2
SOT−93
(TO−218)
CASE 340D
STYLE 1
AYWWG
MJH110xx
3
A
Y
WW
G
MJH110xx
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Device Code
xx = 17, 19, 21, 18, 20, 22
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 7
1
Publication Order Number:
MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
200
250
−
−
−
−
−
−
1.0
1.0
1.0
−
−
0.5
5.0
−
2.0
400
100
15,000
−
−
−
2.5
4.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 0.1 Adc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
Collector Cutoff Current
(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
(VCE = 125 Vdc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
VCEO(sus)
ICEO
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
VCE(sat)
Vdc
Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
−
2.8
Vdc
Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
VBE(sat)
−
3.8
Vdc
fT
3.0
−
−
Cob
−
−
400
600
pF
hfe
75
−
−
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Typical
Characteristic
Delay Time
Rise Time
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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2
Symbol
NPN
PNP
Unit
td
150
75
ns
tr
1.2
0.5
ms
ts
4.4
2.7
ms
tf
2.5
2.5
ms
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
VCC
100 V
RC
SCOPE
TUT
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB ≈ 100 mA
MSD6100 used below IB ≈ 100 mA
V2
APPROX
+12 V
0
V1
APPROX
-8.0 V
tr, tf ≤ 10 ns
Duty Cycle = 1.0%
RB
51
D1
+4.0 V
25 ms
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
0.01
0.01
t1
t2
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SINGLE PULSE
0.02
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
Figure 3. Thermal Response
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
TC = 25°C SINGLE PULSE
30
20
10
5.0
2.0
1.0
0.5
0.2
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
20 30 50
100 150 250
2.0 3.0 5.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
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3
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
REVERSE BIAS
IC, COLLECTOR CURRENT (AMPS)
30
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
L = 200 mH
IC/IB1 ≥ 50
TC = 100°C
VBE(off) = 0-5.0 V
RBE = 47 W
DUTY CYCLE = 10%
20
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
60
100
180
220
140
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
260
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
PNP
NPN
10,000
000
000
000
VCE = 5.0 V
hFE , DC CURRENT GAIN
000
TC = 150°C
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000
TC = 150°C
000
25°C
500
-55°C
200
100
VCE = 5.0 V
5000
2000
25°C
1000
500
-55°C
200
100
0.2
0.3
0.5 0.7
1.0
3.0
5.0
10
0.2
15
0.3
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7 1.0
3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
http://onsemi.com
4
10
15
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
NPN
4.5
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
PNP
TJ = 25°C
4.0
3.5
3.0
2.5
IC = 15 A
2.0
IC = 10 A
1.5
1.0
1.0
IC = 5.0 A
2.0 3.0 5.0
20 30
10
50
100 200 300 500
1000
4.5
TJ = 25°C
4.0
3.5
3.0
IC = 15 A
2.5
2.0
IC = 10 A
1.5
IC = 5.0 A
1.0
1.0
2.0 3.0 5.0
10
20 30
50
100 200 300 500 1000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
3.5
TJ = 25°C
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
TJ = 25°C
3.0
2.5
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VBE(sat) @ IC/IB = 100
VBE(sat) @ IC/IB = 100
2.0
1.5
VBE @ VCE = 5.0 V
VBE @ VCE = 5.0 V
1.0
1.0
VCE(sat) @ IC/IB = 100
0.5
0.2 0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
0.5
0.2
20
VCE(sat) @ IC/IB = 100
0.5 0.7 1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
PNP
NPN
MJH11017
MJH11019
MJH11021
MJH11018
MJH11020
MJH11022
COLLECTOR
BASE
COLLECTOR
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
http://onsemi.com
5
20
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
ORDERING INFORMATION
Device Order Number
MJH11017
MJH11017G
MJH11018
MJH11018G
MJH11019
MJH11019G
MJH11020
MJH11020G
MJH11021
MJH11021G
MJH11022
MJH11022G
Package Type
Shipping
SOT−93
30 Units / Rail
SOT−93
(Pb−Free)
30 Units / Rail
SOT−93
30 Units / Rail
SOT−93
(Pb−Free)
30 Units / Rail
SOT−93
30 Units / Rail
SOT−93
(Pb−Free)
30 Units / Rail
SOT−93
30 Units / Rail
SOT−93
(Pb−Free)
30 Units / Rail
SOT−93
30 Units / Rail
SOT−93
(Pb−Free)
30 Units / Rail
SOT−93
30 Units / Rail
SOT−93
(Pb−Free)
30 Units / Rail
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http://onsemi.com
6
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
K
2
3
D
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 1:
PIN 1.
2.
3.
4.
V
G
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
BASE
COLLECTOR
EMITTER
COLLECTOR
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Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJH11017/D