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Transcript
TGA4022 K Band High Power Amplifier Key Features • • • • • • • Frequency Range: 18 - 23 GHz 26 dB Nominal Gain 32.5 dBm Nominal P1dB 15dB Nominal Return Loss Bias 7.0 V, 840 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 3.65 x 3.14 x 0.10 mm (0.144 x 0.124 x 0.004 in) Primary Applications • • • Point-to-Point Radio Point-to-Multipoint Communications K-Band Sat-Com Product Description The TGA4022 nominally provides 32.5dBm of Output Power @ 1dB Gain Compression from 18 - 23GHz. The MMIC also provides 26dB Gain and 15dB typical Return Loss. The part is ideally suited for markets such as Point-to-Point Radio, Point-to-Multipoint Communications, and K-Band Satellite Communications both commercial and military. Measured Fixtured Data Bias Conditions: Vd =7.0 V, Id =840 mA 30 20 S-parameter (dB) The TriQuint TGA4022 is a compact High Power Amplifier MMIC for K-band applications. The part is designed using TriQuint’s proven standard 0.25 um power pHEMT production process. GAIN 10 0 IRL -10 -20 -30 -40 ORL -50 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) The TGA4022 is 100% DC and RF tested onwafer to ensure performance compliance. 35 Lead-Free & RoHS compliant. P1dB (dBm) 34 33 32 31 30 19.5 20 20.5 21 21.5 22 www.BDTIC.com/TriQuint/ 22.5 23 Frequency (GHz) Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 1 TGA4022 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 8V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 1.5 A 2/ 3/ ⏐Ig⏐ Gate Current 56 mA 3/ PIN Input Continuous Wave Power 26 dBm PD Power Dissipation TCH TSTG -1 TO + 0 V 12 W 2/ 4/ Operating Channel Temperature 200 °C 5/ 6/ Mounting Temperature (30 Seconds) 320 °C Storage Temperature -65 to 150 °C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of 70 °C, the median life is 2.3E4 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TABLE II DC PROBE TESTS (Ta = 25 °C, Nominal) SYMBOL PARAMETER MIN. TYP. MAX. UNITS IDSS,Q1 Saturated Drain Current 120 180 240 mA GM,Q1 Transconductance 162 240 318 mS VBVGS Breakdown Voltage Gate_Source -30 -15 -12 V VBVGD Breakdown Voltage Gate_Drain -30 -16 -12 V VP Pinch-off Voltage -1.35 -1 -0.65 V www.BDTIC.com/TriQuint/ Q1 is 600 um FET TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 2 TGA4022 TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Frequency Range 18 - 23 GHz Drain Voltage, Vd 7.0 V Drain Current, Id 840 mA Small Signal Gain, S21 26 dB Input Return Loss, S11 15 dB Output Return Loss, S22 20 dB 32.5 dBm Pout @ 1dB Gain Compression, P1dB Note: Temperature coefficient on Gain -0.036 dB/0C www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 3 TGA4022 TABLE IV THERMAL INFORMATION PARAMETER θJC Thermal Resistance (channel to backside of Carrier) TEST CONDITIONS TCH (°C) θJC (°C/W) Tm (HRS) Vd = 7 V Id = 1 A Pdiss = 7 W 146 10.8 1.5 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70 °C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Median Lifetime (Tm) vs. Channel Temperature www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 4 TGA4022 Preliminary Measured Data Bias Conditions: Vd = 7.0 V, Id = 840 mA, Room Temperature 28 26 24 22 Gain (dB) 20 18 16 14 12 10 8 6 16 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 35 P1dB (dB m ) 34 33 32 31 30 19.5 20 20.5 21 21.5 22 22.5 23 Frequency (GHz) www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 5 TGA4022 Preliminary Measured Data Bias Conditions: Vd = 7.0 V, Id = 840 mA, Room Temperature 0 -5 Input Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 16 17 18 19 20 21 22 23 24 25 26 27 23 24 25 26 27 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 16 17 18 19 20 21 22 Frequency (GHz) www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 6 TGA4022 Preliminary Measured Data Bias Conditions: Vd = 7.0 V, Id = 840 mA, Room Temperature 45 20GHz 40 21GHz 22GHz 35 23GHz IMD3 (dBc) 30 25 20 15 10 5 0 19 20 21 22 23 24 25 26 27 28 29 Output Pow er per Tone (dBm) www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 7 TGA4022 Mechanical Drawing 2.635 (0.104) 0.992 (0.040) 3.140 (0.124) 2 3.522 (0.139) 3 3.011 (0.119) 2.077 (0.082) 1 1.063 (0.042) 4 0.129 (0.005) 0.129 (0.005) 5 6 0 0 0.128 (0.005) 2.635 (0.104) 0.992 (0.040) 3.650 (0.144) Units: Millimeters (inches) Thickness: 0.100 (0.004) Chip size to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF Ground is backside of MMIC Bond pad #1: Bond pad #2, #6: Bond pad #3, #5: Bond pad #4: (RF In) (Vg) (Vd) (RF Out) 0.100 X 0.125 0.100 X 0.100 0.200 X 0.100 0.100 X 0.125 (0.004 X 0.005) (0.004 X 0.004) (0.008 X 0.004) (0.004 X 0.005) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 8 TGA4022 Recommended Chip Assembly Diagram 100uF 100uF Vg 10 Ohm 10 Ohm .01uf .01uf 100pf 100pf Vd RF IN RF OUT 100pf 100pf .01uf .01uf 100uF Vg 10 Ohm 100uF Vd 10 Ohm GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 9 TGA4022 Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. www.BDTIC.com/TriQuint/ TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - 10