Download M63850FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
M63850P/FP
IMIN
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4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63850P/FP is a inverter input power DMOS transistor
array that consists of 4 independent output N-channel
DMOS transistors.
PIN CONFIGURATION
COM 1
16 →O4
O1← 2
15 ←IN4
IN1→ 3
14 VDD
GND
FEATURES
4 circuits of N-channels DMOS
High breakdown voltage (VDS ≥ 80V)
High-current driving (IDS(max) = 1.5A)
With clamping diodes
Drain-source on-state low resistance
(RON = 0.72Ω, @ = 1.25A)
Wide operating temperature range (Ta = –40 to +85°C)



4
13
5
12
 GND


IN2→ 6
11 ←IN3
NC 7
10 →O3
O2← 8
9 COM
NC : No connection
Package type 16P4(P)
16P2N(FP)
CIRCUIT DIAGRAM
VDD
COM
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps)
OUTPUT
30k
INPUT
4.2k
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GND
The four circuits share the COM and GND.
FUNCTION
The M63850P/FP is consists of 4 independent N-channel
DMOS transistors. Each DMOS transistor is connected in a
common-source with GND PIN. The clamp diodes for spike
killers are connected between the output pin and the COM
pin of each DMOS transistor. The maximum of Drain current
is 1.5A. The maximum Drain-Source voltage is 80V.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
VDS
IDS
VI
VR
IF
Pd
Topr
Tstg
Unit : Ω
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Supply voltage
Drain-source voltage
Drain current
Input voltage
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
7
–0.5 ~ +80
1.5
–0.5 ~ VDD
80
1.5
1.47(P)/1.00(FP)
–40 ~ +85
–55 ~ +125
Unit
V
V
A
V
V
A
W
°C
°C
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
M63850P/FP
IMIN
PREL
.
ation
nge.
pecific to cha
final s subject
a
t
o
re
is is nic limits a
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tr
Notice parame
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4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Limits
Conditions
VDD
VDS
Supply voltage
Drain-source voltage
IDS
Drain current
(Current per 1 circuit when 4
circuits are coming on simultaneously)
VIH
VIL
(Unless otherwise noted, Ta = –40 ~ +85°C)
min
max
4.5
0
—
80
VDD = 5V, Duty Cycle
P : no more than 4%
FP : no more than 2%
0
—
1.25
VDD = 5V, Duty Cycle
P : no more than 36%
FP : no more than 15%
0
—
0.7
—
—
VCC-3.0
Symbol
VCC-1.0
0
VON
Output on voltage
RON
IIH
IIL
IR
VF
Output on resistance
“H” input current
“L” input current
Clamping diode reverse current
Clamping diode forward voltage
VCC
Limits
Test conditions
On supply current
Off supply current
Output leak current
V
V
V
V
(Unless otherwise noted, Ta = 25°C)
Parameter
IDD(ON)
IDD(OFF)
IO(LEAK)
5.5
A
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS
Unit
typ
5.0
min
—
—
—
—
—
—
—
—
—
—
VDD = 5.5V, VI = 0V, 1 circuit only
VDD = 5.5V, VI = 5.5V
VDD = 5.5V, VI = 5.5V, VDS = 80V
VI = 4.5V, IDS = 0.7A
VI = 4.5V, IDS = 1.25A
VI = 4.5V, IDS = 1.25A
VDD = 5.5V, VI = 5.5V
VDD = 5.5V, VI = 0V
VR = 80V
IF = 1.25A
typ
130
—
—
0.45
0.9
0.72
—
–130
—
1.3
Unit
max
300
10
10
0.72
1.44
1.15
10
–300
10
2.0
µA
µA
µA
V
Ω
µA
µA
µA
V
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SWITCHING CHARACTERISTICS
Symbol
ton
Parameter
Turn-on time
Turn-off time
toff
(Unless otherwise noted, Ta = 25°C)
min
CL = 15pF (Note 1)
typ
max
—
45
—
—
125
—
Unit
ns
ns
TIMING DIAGRAM
Note 1 : TEST CIRCUIT
INPUT
Limits
Test conditions
VO
VDD
INPUT
50%
Measured
device
50%
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 5V
(2)Input-output conditions : RL = 8.3Ω, Vo = 10V, VDD = 4.5V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes.
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
M63850P/FP
IMIN
PREL
.
ation
nge.
pecific to cha
final s subject
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Input Characteristics
Thermal Derating Factor Characteristics
2.0
–160
1.5
1.0
M63850P
Input current II (µA)
Power dissipation Pd (W)
VDD = 5V
M63850FP
0.744
0.520
0.5
–120
–80
Ta = 85°C
–40
Ta = –40°C
Ta = 25°C
0
0
25
50
75 85
0
100
0
1
2
3
4
5
Input voltage VDD - VI (V)
Ambient temperature Ta (°C)
Duty Cycle - Drain Current Characteristics
(M63850P)
2.0
Duty Cycle - Drain Current Characteristics
(M63850P)
2.0
•The drain current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents
the value of the simultaneouslyoperated circuit.
•Ta = 85°C, VDD = 5V
1.5
1
1.0
2
•The drain current values represent the
current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
•Ta = 25°C, VDD = 5V
0.5
0
0
20
40
60
80
3
4
Drain current IDS (A)
Drain current IDS (A)
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1.5
1.0
1
0
100
2
3
4
0.5
0
20
Duty cycle (%)
1
2
3
4
0.5
0
20
40
60
Duty cycle (%)
80
100
Duty Cycle - Drain Current Characteristics
(M63850FP)
2.0
80
100
Drain current IDS (A)
Drain current IDS (A)
•The drain current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents
the value of the simultaneouslyoperated circuit.
•Ta = 25°C, VDD = 5V
1.0
0
60
Duty cycle (%)
Duty Cycle - Drain Current Characteristics
(M63850FP)
2.0
1.5
40
•The drain current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents
the value of the simultaneouslyoperated circuit.
•Ta = 85°C, VDD = 5V
1.5
1.0
1
2
3
4
0.5
0
0
20
40
60
80
100
Duty cycle (%)
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
M63850P/FP
IMIN
PREL
.
ation
nge.
pecific to cha
final s subject
a
t
o
re
is is nic limits a
e: Th
tr
Notice parame
Som
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
Supply Voltage - On Supply Current
Characteristics
Input Voltage - Drain Current
Characteristics
1.6
On-state supply current IDD(ON) (µA)
160
Drain current IDS (A)
VDD = 5V
VDS = 2V
1.2
Ta = –40°C
0.8
Ta = 85°C
Ta = 25°C
0.4
0
0
1
2
3
4
VI = 0.5V
One circuit only
120
80
Ta = 85°C
40
Ta = –40°C
Ta = 25°C
0
5
0
1
2
3
4
Input voltage VI (V)
Supply voltage VDD (V)
Output On Voltage - Drain Current
Characteristics
Output On Voltage - Drain Current
Characteristics
1.6
5
200
VDD = 4.5V
VI = 0.5V
VDD = 4.5V
VI = 0.5V
160
Ta = –40°C
Drain current IDS (A)
Drain current IDS (A)
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1.2
0.8
Ta = 85°C
Ta = 25°C
0.4
0
Ta = –40°C
120
Ta = 85°C
80
40
0
0.4
0.8
1.2
0
1.6
0
0.05
0.10
0.15
0.20
Output on voltage VON (V)
Output on voltage VON (V)
Clamping Diode Characteristics
Switching Characteristics
103
1.6
7
5
1.2
Switching time (nsec)
Clamping diode forward current IF (A)
Ta = 25°C
Ta = 85°C
0.8
Ta = 25°C
0.4
Ta = 25°C
3
2
toff
102
7
5
ton
3
2
Ta = –40°C
0
0
0.4
0.8
1.2
1.6
Clamping diode forward voltage VF (V)
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Drain current IDS (mA)
Apr. 2005
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ARY
M63850P/FP
IMIN
PREL
4-UNIT 1.5A DMOS ARRAY WITH CLAMP DIODE
Drain Current - Output On Resistance
Characteristics
1.0
Ta = 25°C
Vcc = 4.5V
0.8
Vcc = 5.0V
0.6
0.4
Vcc = 5.5V
0.2
0 1
10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Drain current IDS (mA)
Drain-source on-state resistance RON (Ω)
Drain-source on-state resistance RON (Ω)
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Output On Resistance - Ambient Temperature
Characteristics
1.6
VDD = 4.5V
1.2
0.8
0.4
0
–40 –20
0
20
40
60
80
100
Ambient temperature Ta (°C)
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Apr. 2005