Download M54566FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION







INPUT 







FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Ic(max) = 400mA)
Á Active L-level input
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
IN1→ 1
16 →O1 
IN2→ 2
15 →O2 

IN3→ 3
14 →O3 
IN4→ 4
13 →O4  OUTPUT
IN5→ 5
12 →O5 
IN6→ 6
11 →O6 
IN7→ 7
10 →O7 
GND







9
8
VCC
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
VCC
20K
OUTPUT
2.7K
INPUT
8K
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7.2K
FUNCTION
The M54566 is produced by adding PNP transistors to
M54222 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and PNP
transistor base. The input emitters are connected to VCC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
The M54566FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Symbol
VCC
Supply voltage
VCEO
IC
Collector-emitter voltage
Collector current
Output, H
Current per circuit output, L
VI
Pd
Input voltage
Power dissipation
Ta = 25°C, when mounted on board
Topr
Operating temperature
Storage temperature
Tstg
Parameter
3K
Conditions
Ratings
10
Unit
V
–0.5 ~ +50
V
mA
400
–0.5 ~ VCC
V
W
1.47(P)/1.00(FP)
–20 ~ +75
°C
–55 ~ +125
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VO
(Unless otherwise noted, Ta = –20 ~ +75°C)
min
Limits
typ
4
0
5
—
8
V
50
V
0
—
350
0
—
200
VCC –0.2
—
0
—
VCC
VCC –3
Parameter
Supply voltage
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
IC
VIH
VCC = 5V, Duty Cycle
P : no more than 10%
FP : no more than 6%
VCC = 5V, Duty Cycle
P : no more than 30%
FP : no more than 20%
“H” input voltage
“L” input voltage
VIL
ELECTRICAL CHARACTERISTICS
Unit
max
mA
V
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
Limits
Test conditions
VCE (sat)
Collector-emitter saturation voltage
II
Input current
ICC
h FE
Supply current (one circuit coming on)
DC amplification factor
min
50
ICEO = 100µA
VI = VCC –3V, IC = 350mA
typ+
—
Unit
max
—
V
VI = VCC –3V, IC = 200mA
—
—
1.1
0.9
2.2
1.6
VI = VCC –3.5V
VCC = 5V, V I = VCC –3.5V
—
—
–0.38
1.4
–0.58
3.0
mA
mA
2000
10000
—
—
VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C
V
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
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SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
ton
Parameter
Turn-on time
Turn-off time
toff
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
INPUT
Limits
Test conditions
min
—
typ
95
max
—
—
2500
—
Unit
ns
ns
TIMING DIAGRAM
VCC
VO
INPUT
Measured
device
50%
50%
RL
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 1 to 4V
(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
400
2.0
Collector current Ic (mA)
Power dissipation Pd (W)
VCC = 4V
VI = 1V
M54566P
1.5
M54566FP
1.0
0.5
0
0
25
50
75
Ta = 75°C
Ta = –20°C
200
Ta = 25°C
100
0
100
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Collector Characteristics
(M54566P)
Duty-Cycle-Collector Characteristics
(M54566P)
500
400
➀
➁
300
➂
➃
➄
➅
➆
Collector current Ic (mA)
500
Collector current Ic (mA)
300
➀
400
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200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•VCC = 5V
•Ta = 25°C
100
0
0
20
40
60
80
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•VCC = 5V
•Ta = 75°C
100
0
20
40
60
80
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54566FP)
Duty-Cycle-Collector Characteristics
(M54566FP)
100
500
➀
300
➁
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•VCC = 5V
•Ta = 25°C
0
20
40
60
Duty cycle (%)
80
➂
➃
➄
➅
➆
100
Collector current Ic (mA)
Collector current Ic (mA)
➂
➃
➄➅
➆
200
Duty cycle (%)
400
0
➁
0
100
500
100
300
400
➀
300
200
100
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•VCC = 5V
•The value in the circle represents the
value of the simultaneously-operated circuit. •Ta = 75°C
0
20
40
60
80
➁
➂
➃
➄
➅
➆
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DC Amplification Factor
Collector Current Characteristics
104
5
Ta = 25°C
Ta = 75°C
3
Ta = –20°C
2
103
7
5
3
Collector current Ic (mA)
Vcc = 4V
VCE = 4V
7
DC amplification factor hFE
Grounded Emitter Transfer Characteristics
400
Vcc = 4V
VCE = 4V
Ta = 75°C
300
Ta = 25°C
Ta = –20°C
200
100
2
102 1
10
2
3
5 7 102
2
0
5 7 103
3
Collector current Ic (mA)
0
0.8
1.2
1.6
Supply voltage-Input voltage VCC–VI (V)
Input Characteristics
–1.0
0.4
Supply Current Characteristics
5
Vcc = 8V
Supply current Icc (mA)
–0.8
VI = 0V
4
Input current II (mA)
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–0.6
Ta = –20°C
Ta = 25°C
–0.4
Ta = 75°C
–0.2
0
0
1
2
3
4
5
Supply voltage-Input voltage VCC–VI (V)
Ta = –20°C
3
Ta = 25°C
Ta = 75°C
2
1
0
0
2
4
6
8
10
Supply voltage VCC (V)
Aug. 1999