Download M54530FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION







INPUT 







FEATURES
Á High breakdown voltage (BV CEO ≥ 40V)
Á High-current driving (Ic(max) = 400mA)
Á With clamping diodes
Á Driving available with PMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 →O1 
IN2→ 2
15 →O2 

IN3→ 3
14 →O3 
IN4→ 4
13 →O4  OUTPUT
IN5→ 5
12 →O5 
IN6→ 6
11 →O6 
IN7→ 7
10 →O7 
GND
9 →COM COMMON







8
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
OUTPUT
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
INPUT
20K
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20K
2K
GND
The seven circuits share the COM and GND.
FUNCTION
The M54530P and M54530FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54530FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +40
Unit
V
400
mA
–0.5 ~ +40
400
V
mA
40
1.47(P)/1.00(FP)
V
W
–20 ~ +75
–55 ~ +125
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
VO
Limits
Parameter
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
IC
(Unless otherwise noted, Ta = –20 ~ +75°C)
VIH
“H” input voltage
VIL
“L” input voltage
min
typ
max
0
—
40
0
—
400
200
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more thn 30%
FP : no more than 25%
IC ≤ 400mA
0
—
8
—
IC ≤ 200mA
5
—
—
ELECTRICAL CHARACTERISTICS
Unit
V
mA
0
35
V
0.5
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE (sat)
VI = 8V, I C = 400mA
Collector-emitter saturation voltage
VI = 5V, I C = 200mA
II
Input current
VI = 17V
VI = 35V
VF
Clamping diode forward voltage
IF = 400mA
IR
h FE
Clamping diode reverse current
DC amplification factor
VR = 40V
VCE = 4V, IC = 300mA, Ta = 25°C
Limits
Test conditions
typ+
—
max
—
—
—
1.3
1.0
2.4
1.6
—
0.85
1.8
—
—
2.0
1.5
3.8
2.4
—
3500
100
—
min
40
ICEO = 100µA
—
1000
Unit
V
V
mA
V
µA
—
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+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
Limits
typ
max
—
35
—
ns
—
760
—
ns
min
Unit
TIMING DIAGRAM
VO
INPUT
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VP = 8VP-P
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
400
VI = 5V
Collector current Ic (mA)
Power dissipation Pd (W)
2.0
M54530P
1.5
M54530FP
1.0
0.5
300
200
100
Ta = 25°C
Ta = 75°C
Ta = –20°C
0
0
25
50
75
0
100
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Collector Characteristics
(M54530P)
Duty-Cycle-Collector Characteristics
(M54530P)
500
500
➀
400
Collector current Ic (mA)
Collector current Ic (mA)
0
400
➀
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➁
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
➂
➃
➄
➅
➆
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
100
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54530FP)
Duty-Cycle-Collector Characteristics
(M54530FP)
➂
➃
➄
➅
➆
100
500
➀
400
300
➁
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
Duty cycle (%)
80
➂
➃
➄
➅
➆
100
Collector current Ic (mA)
Collector current Ic (mA)
➁
200
0
100
500
0
300
400
➀
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
100
0
0
20
40
60
➁
➂
➃
➄
➅
➆
•Ta = 75°C
80
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54530P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
104
400
Ta = 75°C
5
Ta = 25°C
3
Ta = –20°C
2
103
7
5
3
Collector current Ic (mA)
DC amplification factor hFE
VCE = 4V
VCE = 4V
7
300
200
Ta = 75°C
100
Ta = 25°C
2
Ta = –20°C
102 1
10
2
3
5 7 102
2
0
5 7 103
3
0
Collector current Ic (mA)
1
2
3
4
Input voltage VI (V)
Clamping Diode Characteristics
Input Characteristics
400
Forward bias current IF (mA)
2.0
Input current II (mA)
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1.5
Ta = –20°C
1.0
Ta = 25°C
Ta = 75°C
0.5
300
200
100
Ta = 25°C
Ta = 75°C
Ta = –20°C
0
0
5
10
15
Input voltage VI (V)
20
25
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Aug. 1999