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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54525AGP is seven-circuit Darlington transistor array with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES
● High breakdown voltage (BVCEO ≥ 50V)
● High-current driving (IC(max ) = 500mA )
● With clamping diodes
● Driving available with PMOS IC output of 24V
● Wide operating temperature range (Ta = –40 to +85°C)
IN1→ 1
16 → O1
IN2→ 2
15 → O2
IN3→ 3
14 → O3
IN4→ 4
13 → O4
IN5→ 5
12 → O5
IN6→ 6
11 → O6
IN7→ 7
10 → O7
GND
9
8
OUTPUT
COM COMMON
Package type 16P2S-A
CIRCUIT DIAGRAM
COM
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT
INPUT
10.5k
Vz=7V
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5k
3k
GND
FUNCTION
The M54525AGP has seven circuits consisting of NPN
Darlington transistors. This IC has resistance of 10.5kΩ and
Zener diode between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor
emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum. The M54525AGP is enclosed in
molded small flat package, enabling space-saving design.
The seven circuits share COM and GND.
The diode, indicated with the dotted line, parasitic, and cannot
be used.
Unit: Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
0.80
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Limits
Parameter
VO
VIH
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
“H” input voltage
VIL
“L” input voltage
IC
min
0
typ
—
max
50
Duty Cycle no more
than 4%
0
—
400
Duty Cycle no more
than 15%
0
—
200
17
—
—
25
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
II
VF
IR
hFE
6
V
V
(Unless otherwise noted, Ta = 25°C)
Symbol
VCE(sat)
V
mA
0
ELECTRICAL CHARACTERISTICS
Unit
Limits
Test conditions
min
50
—
—
—
—
—
—
1000
ICEO = 100µA
II = 500µA, IC = 350mA
Collector-emitter saturation voltage II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 17V
Input current
Clamping diode forward voltage
IF = 350mA
VR = 50V
Clamping diode reverse current
DC amplification factor
VCE = 2V, IC = 350mA
typ
—
1.2
1.0
0.9
0.8
1.3
—
2000
Unit
max
—
1.6
1.3
1.1
1.3
2.0
100
—
V
V
mA
V
µA
—
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SWITCHING CHARACTERISTICS
Symbol
ton
Parameter
Turn-on time
Turn-off time
toff
(Unless otherwise noted, Ta = 25°C)
Limits
Test conditions
CL = 15pF (note 1)
min
—
typ
5
max
—
—
100
—
Unit
ns
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
INPUT
Vo
50%
Measured device
50%
RL
OPEN
OUTPUT
PG
50Ω
CL
OUTPUT
50%
ton
50%
toff
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VIH = 17V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
1.0
500
0.8
Collector current Ic (mA)
Power dissipation Pd (W)
II = 500µA
0.6
0.416
0.4
0.2
400
300
200
Ta = 25°C
100
Ta = 85°C
0
0
25
50
0
75 85 100
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Output saturation voltage VCE(sat) (V)
Duty Cycle-Collector Characteristics
Duty Cycle-Collector Characteristics
500
400
Collector current Ic (mA)
500
Collector current Ic (mA)
0
Ta = –40°C
400
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1
300
2
200
100
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
20
40
60
3
4
5
6
7
2
100
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit. •Ta = 85°C
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
DC amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
500
VCE = 2V
VCE = 2V
3
Ta = 85°C
2
103
7
5
Ta = 25°C
3
Ta = –40°C
Collector current Ic (mA)
DC amplification factor hHE
200
0
104
7
5
1
0
100
80
300
400
300
200
Ta = 85°C
Ta = 25°C
100
Ta = –40°C
2
102 1
10
2
3
5 7 102
2
3
Collector current Ic (mA)
5 7 103
0
0
2
4
6
8
10 12
14 16
Input voltage VI (V)
Feb.2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54525AGP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Input Characteristics
Clamping Diode Characteristics
500
2
Ta = –40°C
Ta = 25°C
1
Ta = 85°C
0
0
5
10
15
20
Input voltage VI (V)
25
30
Forward bias current IF (mA)
Input current II (mA)
3
400
300
200
Ta = 25°C
100
Ta = 85°C
0
0
0.5
Ta = –40°C
1.0
1.5
2.0
Forward bias voltage VF (V)
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Feb.2003