Download MGF0846G 数据资料DataSheet下载

PRELIMINARY
< High-power GaN HEMT (small signal gain stage) >
MGF0846G
L to C BAND / 40W
non - matched
DESCRIPTION
OUTLINE DRAWING
The MGF0846G, GaN HEMT with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
Unit : m illim eters
FEATURES
①
4.4+0/-0.3
2MIN
 High voltage operation
VDS=47V
 High output power
Po=46.5dBm(TYP.) @f=2.6GHz,P3dB
 High efficiency
d=60%(TYP.) @f=2.6GHz,P3dB
 Designed for use in Class AB linear amplifiers
②
2MIN
②
φ2.2
0.6±0.2
APPLICATION
 MMDS/UMTS/WiMAX
③
QUALITY
 GG
Packaging
5.0
0.1
 4 inch Tray (25 pcs)
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 Rg=30
Absolute maximum ratings
Symbol
VDS
VGS
IGR
IGF
PT*1
Tch
Tstg
9.0±0.2
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
14.0
(Ta=25C)
Parameter
Drain to Source Voltage
Gate to source voltage
0.65
 Ids=340mA
Ratings
Unit
120
-10
-6
120
64
230
-65 to +175
V
V
mA
mA
W
C
C
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-7
*1:Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
-1
-
-5
V
45.5
46.5
-
dBm
f=2.6GHz
-
45.5
-
dBm
*2 : @P3dB
-
60
-
%
VGS(off)
P3dB
Gate to source cut-off voltage
VDS=47V,ID=12mA
3dB gain compression power
VDS=47V,ID(RF off)=340mA
P1dB
1dB gain compression power
d *2
Drain efficiency
GLP *3
Linear power gain
*3 : Pin=20dBm
Rth(ch-c) *4
Thermal resistance
ΔVf method
12
13
-
dB
-
2.5
3.2
C/W
*4 :Channel-case
Specification are subject to change without notice.
Note
DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C)
 Bias conditions Vds=47V , Ids=340mA
 Time 10hrs
Publication Date : Sep., 2011
1
1.9±0.4
 Vds=47V
1.65
RECOMMENDED BIAS CONDITIONS
< High-power GaN HEMT (small signal gain stage) >
PRELIMINARY
MGF0846G
L to C BAND / 40W
non - matched
1.5
1.0
0.5
0.0
100
Po 90
80
70
Effi
60
50
40
Gp 30
20
10
0
f=2.6GHz
VD=47V
IDQ=350mA
Ta=25deg.
Efficiency(%)
Po(dBm),Gp(dB)
50
45
40
35
30
25
20
15
10
5
0
IDRF(A)
MGF0846G Example of Circuit Schematic and Charactreistics : f = 2.6 GHz
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10 15 20 25 30 35 40
Pin(dBm)
Publication Date : Sep., 2011
2
< High-power GaN HEMT (small signal gain stage) >
PRELIMINARY
MGF0846G
L to C BAND / 40W
non - matched
MGF0846G S-parameters( Ta=25deg.C , VDS=47(V),IDS=350(mA) )
S Parameters(Typ.)
f
(GHz)
S11
S21
S12
S22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
0.6
0.966
-173.6
5.549
85.5
0.029
30.5
0.660
Angle(deg.)
-173.7
1.0
0.910
-176.4
3.379
74.4
0.028
3.6
0.643
-179.5
1.4
0.893
176.6
2.433
66.6
0.027
9.1
0.632
178.5
1.8
0.903
174.0
1.992
59.5
0.029
6.7
0.632
178.4
2.2
0.897
168.3
1.675
52.0
0.033
-1.2
0.648
175.2
2.6
0.909
163.9
1.402
42.0
0.026
4.1
0.664
173.0
3.0
0.875
157.0
1.293
34.7
0.031
-1.7
0.628
168.0
3.4
0.905
151.1
1.206
25.6
0.034
11.6
0.635
162.8
3.8
0.894
144.3
1.051
15.3
0.048
1.3
0.644
158.0
4.2
0.907
140.7
0.945
7.4
0.036
-19.0
0.666
152.3
4.6
0.911
136.7
0.853
1.2
0.038
-22.2
0.682
147.7
5.0
0.908
134.5
0.793
-4.8
0.035
-5.2
0.702
144.5
5.4
0.901
130.9
0.728
-10.9
0.039
-3.8
0.715
142.1
5.8
0.894
126.8
0.695
-18.1
0.041
-9.1
0.740
139.3
6.2
0.891
119.4
0.658
-25.5
0.046
-12.4
0.742
137.2
6.6
0.887
110.9
0.630
-33.8
0.049
-14.7
0.751
133.2
7.0
0.894
99.5
0.600
-43.6
0.049
-22.0
0.735
127.9
7.4
0.899
91.5
0.570
-51.5
0.056
-25.4
0.731
120.9
7.8
0.902
83.8
0.530
-60.5
0.052
-32.9
0.733
113.1
8.2
0.906
78.8
0.500
-68.5
0.058
-36.3
0.756
103.9
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Publication Date : Sep., 2011
3
< High-power GaN HEMT (small signal gain stage) >
PRELIMINARY
MGF0846G
L to C BAND / 40W
non - matched
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Publication Date : Sep., 2011
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