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STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Very fast soft recovery antiparallel diode ■ Lead free package 2 3 1 TO-247 Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching frequency converters Figure 1. Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW60H65DF GW60H65DF TO-247 Tube July 2012 Doc ID 023011 Rev 3 This is information on a product in full production. www.bdtic.com/ST 1/13 www.st.com 13 Electrical ratings 1 STGW60H65DF Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 120 A IC Continuous collector current at TC = 100 °C 60 A Pulsed collector current 240 A Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 120 A IF Continuous forward current at TC = 100 °C 60 A IFP (1) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 °C 360 W 6 µs - 55 to 150 °C VCES ICP (1) VGE Short-circuit withstand time at VCC = 400 V, VGE = 15 V tSC TSTG Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Symbol 2/13 Storage temperature range Operating junction temperature TJ 1. Parameter Thermal data Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.35 °C/W RthJC Thermal resistance junction-case diode 1.38 °C/W RthJA Thermal resistance junction-ambient 50 °C/W Doc ID 023011 Rev 3 www.bdtic.com/ST STGW60H65DF 2 Electrical characteristics Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Symbol Static Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Typ. Max. 650 Unit V VGE = 15 V, IC = 60 A Collector-emitter saturation VGE = 15 V, IC = 60 A voltage TJ = 150 °C 1.9 VCE(sat) VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 6.0 ICES Collector cut-off current (VGE = 0) VCE = 650 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Symbol Cies Coes Cres Qg Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 60 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge Symbol V Dynamic Total gate charge Table 6. V 2.1 Min. Typ. Max. Unit - 7150 345 125 - pF pF pF - 206 - nC - 60 - nC - 70 - nC Min. Typ. Max. Unit - ns ns A/µs Switching on/off (inductive load) Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 67 46 1043 td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 150 °C - 64 49 990 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 41 165 34 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 150 °C - 49 169 78 - ns ns ns Doc ID 023011 Rev 3 www.bdtic.com/ST 3/13 Electrical characteristics Table 7. Symbol 1. STGW60H65DF Switching energy (inductive load) Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V - 1.5 1.1 2.6 - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V TJ = 150 °C - 2.7 1.5 4.2 - mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 23. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 °C and 125 °C). 2. Turn-off losses include also the tail of the collector current. Table 8. Symbol 4/13 Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 60 A IF = 60 A, TJ = 150 °C - 1.75 1.4 - V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 60 A, VR = 400 V, di/dt = 1700 A/µs - 62 930 30 - ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 60 A, VR = 400 V, di/dt = 1630 A/µs TJ = 150 °C - 100 2800 58 - ns nC A Doc ID 023011 Rev 3 www.bdtic.com/ST STGW60H65DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics (TJ = -40 °C) Figure 3. AM11847v1 IC (A) V GE = 15V 220 200 Output characteristics (TJ = 25 °C) AM11848v1 IC (A) V GE = 15V 220 13V V GE = 20V 180 13V V GE = 20V 200 180 11V 160 160 140 140 120 120 100 100 80 80 60 60 40 11V 40 9V 20 9V 20 0 0 0 Figure 4. 1 2 3 VCE (V) 4 0 Output characteristics (TJ = 150 °C) Figure 5. AM11849v1 IC (A) V GE = 15V 220 2 3 VCE (V) 4 Transfer characteristics AM11850v1 IC (A) 220 13V V GE = 20V 200 1 200 V CE = 10V 180 180 160 160 11V 140 140 120 120 100 100 80 80 TJ = 150°C 60 60 9V 40 20 0 0 0 Figure 6. 1 2 3 VCE(SAT) vs. junction temperature AM11851v1 VCE (V) 2.8 TJ = -40°C 6 VCE (V) 4 TJ = 25°C 40 20 Figure 7. 7 9 10 11 TJ = 150°C V GE = 15V 2.6 2.4 2.4 2.2 2.2 TJ = -40°C 1.8 1.6 IC = 30A 1.4 1.4 1.2 -50 TJ = 25°C 2.0 IC = 60A 1.8 1.6 VGE (V) AM11852v1 VCE (V) IC = 120A 2.0 12 VCE(SAT) vs. collector current 2.8 2.6 8 1.2 -25 0 25 50 75 100 125 TJ (ºC) 30 40 50 60 70 80 Doc ID 023011 Rev 3 www.bdtic.com/ST 90 100 110 IC (A) 5/13 Electrical characteristics Figure 8. STGW60H65DF Normalized VGE(th) vs. junction temperature AM11853v1 VGE(th) norm (V) Figure 9. Gate charge vs. gate-emitter voltage AM11854v1 VGE (V) I C = 1 mA 16 14 1.0 12 10 0.9 8 6 0.8 4 2 0.7 -50 0 -25 0 25 50 75 100 125 0 TJ (ºC) Figure 10. Capacitance variations (f = 1 MHz, VGE = 0) 100 150 Figure 11. Switching losses vs. collector current 10000 AM12728v1 E (µJ) Cies Qg (nC) 200 AM11855v1 C (pF) V CC = 400V, V GE = 15V, RG = 10 Ω 5000 Coes TJ = 25 °C TJ = 125 °C 4000 Cres 1000 50 --- EON 3000 2000 100 EOFF 1000 0 10 0.1 1 10 20 VCE (V) Figure 12. Switching losses vs. gate resistance 40 60 80 100 IC (A) Figure 13. Switching losses vs. temperature AM12729v1 E (μJ) AM12730v1 E (μJ) V CC = 400V, V GE = 15V, IC = 60A, TJ = 125°C 4000 VCC = 400V, VGE = 15 V, IC = 60 A, RG = 10 Ω 2250 2000 3500 1750 3000 EON 1500 EOFF 2500 1250 EON 2000 1000 1500 750 500 1000 0 6/13 EOFF 10 20 30 40 RG (Ω) 25 50 75 100 Doc ID 023011 Rev 3 www.bdtic.com/ST 125 TJ (°C) STGW60H65DF Electrical characteristics Figure 14. Turn-OFF SOA Figure 15. Short circuit time & current vs. VGE AM11859v1 IC (A) AM11860v1 tsc (μs) ISC (A) V CC = 400V, TC = 25°C 20 100 17.5 350 tSC 15 10 12.5 V GE = 15 V, RG = 10Ω TC = 150 °C 1 250 10 7.5 150 0.1 5 0.01 0.1 1 10 Figure 16. Diode forward current vs. forward voltage AM12731v1 VF (V) Tj =- 40°C 2.4 2.5 VCE (V) 100 ISC 9 10 11 12 13 14 Figure 17. Diode forward current vs. junction temperature AM12732v1 VF (V) 2.4 Tj = 25°C 2.2 50 VGE (V) 15 IF = 15 A 2.2 Tj = 150°C IF = 30 A IF = 60 A 2.0 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 10 15 20 25 30 35 40 45 50 55 60 IF (A) Figure 18. Reverse recovery current as a function of diode current slope AM12733v1 Irm (A) V CC = 400 V, VGE = 15 V, I C = 60 A 0.8 -50 -25 0 30 50 75 100 125 150 TJ (ºC) Figure 19. Reverse recovery time as a function of diode current slope AM12734v1 trr (ns) VCC = 400 V, VGE = 15 V, IC = 60 A 120 35 TJ = 25 °C TJ = 125 °C 25 TJ = 25°C TJ = 125°C 110 --- --- 100 90 25 80 20 70 60 15 50 10 250 750 1250 1750 di/dt (A/μs) 40 250 750 1250 Doc ID 023011 Rev 3 www.bdtic.com/ST 1750 di/dt (A/μs) 7/13 Electrical characteristics STGW60H65DF Figure 20. Reverse recovery charge as a function of diode current slope AM12735v1 Qrr (µC) 2 1.8 Figure 21. Maximum normalized Zth junction to case (IGBT) AM11861v1 K VCC = 400 V, VGE = 15 V, IC = 60 A TJ = 25 °C TJ = 125 °C --- Single Pulse 1.6 D=0.01 1.4 D=0.02 1E-01 1.2 D=0.05 1 D=0.1 0.8 D=0.2 0.6 D=0.5 0.4 0.2 250 750 1250 1750 di/dt (A/μs) 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 Figure 22. Maximum normalized Zth junction to case (Diode) 8/13 Doc ID 023011 Rev 3 www.bdtic.com/ST 1.E-01 tP (s) STGW60H65DF 3 Test circuits Test circuits Figure 23. Test circuit for inductive load switching Figure 24. Gate charge test circuit AM01504v1 Figure 25. Switching waveform AM01505v1 Figure 26. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 Doc ID 023011 Rev 3 www.bdtic.com/ST AM01507v1 9/13 Package mechanical data 4 STGW60H65DF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/13 Typ. 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 023011 Rev 3 www.bdtic.com/ST 5.70 STGW60H65DF Package mechanical data Figure 27. TO-247 drawing 0075325_G Doc ID 023011 Rev 3 www.bdtic.com/ST 11/13 Revision history 5 STGW60H65DF Revision history Table 10. 12/13 Document revision history Date Revision Changes 28-Mar-2012 1 Initial release. 06-Jun-2012 2 Document status promoted from preliminary data production data. Added: Section 2.1: Electrical characteristics (curves) on page 5. 26-Jul-2012 3 Updated: Figure 8 on page 6. Doc ID 023011 Rev 3 www.bdtic.com/ST STGW60H65DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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