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CPH5517 Ordering number : EN8205A SANYO Semiconductors DATA SHEET CPH5517 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP/NPN transistor contained in package, facilitating high-density mounting The CPH5517 consists of two chips which are equivalent to the CPH3116 and the CPH3216, respectively Ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Ratings Unit (--50)60 V (--)50 V VEBO IC (--)5 V (--)1.0 A Collector Dissipation ICP IB PC Junction Temperature Tj Storage Temperature Tstg Base Current Conditions VCBO VCEO (--)3 Mounted on a ceramic board (600mm2×0.8mm) 1unit 0.9 W °C --55 to +150 °C • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 4 CPH5517-TL-E 0.15 3 Packing Type : TL Marking LOT No. EM 0.05 1.6 2.8 0.2 0.6 Product & Package Information unit : mm (typ) 7017A-008 2.9 mA 150 Package Dimensions 5 A (--)200 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Collector1 2 : Collector2 3 : Emitter2 4 : Base Common 5 : Emitter1 Electrical Connection 5 4 3 SANYO : CPH5 1 2 http://semicon.sanyo.com/en/network 62012 TKIM/21505 TSIM TB-00001151 No. 8205-1/8 CPH5517 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob VCB=(--)10V, f=1MHz Emitter Cutoff Current DC Current Gain Ratings min Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time V(BR)CEO V(BR)EBO ton tstg tf Fall Time μA (--)0.1 μA 560 MHz (9)6 (--280) VCE(sat) VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage (--)0.1 420 IC=(--)300mA, IB=(--)6mA Base-to-Emitter Saturation Voltage Unit max 200 IC=(--)500mA, IB=(--)10mA Collector-to-Emitter Saturation Voltage typ IC=(--)500mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ See specified Test Circuit. mV mV 130 190 (--145) (--220) mV 90 135 mV (--)0.81 (--)1.2 (--50)60 IE=(--)10μA, IC=0A pF (--430) V V (--)50 V (--)5 V (36)38 ns (173)332 ns (28)40 ns Switching Time Test Circuit IB1 PW=20μs DC≤1% IB2 OUTPUT INPUT VR RB 24Ω + 50Ω 100μF + 470μF VBE= --5V VCC=25V 20IB1= --20IB2= IC=500mA For PNP, the polarity is reversed. Ordering Information Device CPH5517-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No. 8205-2/8 CPH5517 IC -- VCE A 40mA --1 0mA Collector Current, IC -- mA --800 --8mA --6mA --600 --4mA --400 --2mA --200 IB=0mA 0 0 --0.2 --0.4 --0.6 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --1.0 IB=0mA 0.2 [PNP] Collector Current, IC -- A --0.6 --0.5 --0.4 0.6 0.8 1.0 IC -- VBE 1.0 0.8 --0.7 0.4 Collector-to-Emitter Voltage, VCE -- V IT01643 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 200 --0.8 IT01644 [NPN] VCE=2V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 5 5 DC Current Gain, hFE --25°C 100 7 5 2 3 5 7 --1.0 2 IT01647 f T -- IC [PNP] [NPN] VCE=2V Ta=75°C --25°C 25°C 2 3 5 7 0.1 2 3 5 7 Gain-Bandwidth Product, f T -- MHz 1000 7 5 3 2 100 7 5 2 3 IT01648 f T -- IC 5 [NPN] VCE=10V 3 2 1.0 Collector Current, IC -- A VCE= --10V 3 3 2 --0.01 10 0.01 3 Collector Current, IC -- A 5 hFE -- IC 5 2 2 1.2 IT01646 7 3 7 --0.1 1.0 100 2 5 0.8 3 3 3 0.6 7 Ta=75°C 2 0.4 Base-to-Emitter Voltage, VBE -- V 1000 VCE= --2V 25°C 10 --0.01 0.2 IT01645 3 2 0 --1.2 [PNP] 7 DC Current Gain, hFE 2mA 0 0 Gain-Bandwidth Product, f T -- MHz 4mA 400 0.9 --0.1 6mA 600 --0.9 --0.2 8mA 0 VCE= --2V --0.3 30mA 800 --1.0 --0.8 [NPN] 10mA Ta=7 5°C 25°C --25°C m --20 IC -- VCE 1000 20mA --30 [PNP] mA 50mA 0 --4 mA --5 0 Collector Current, IC -- mA mA --1000 2 1000 7 5 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 IT01649 2 0.01 2 3 5 7 0.1 2 3 5 7 Collector Current, IC -- A 1.0 2 3 IT01650 No. 8205-3/8 CPH5517 Cob -- VCB 100 100 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 3 2 10 7 5 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1.0 2 10 7 5 5 7 0.1 5 7 --100 IT01651 2 --0.1 7 Ta 5 3 °C =75 C 2 5° C --25° 2 --0.01 --0.01 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A VCE(sat) -- IC --1.0 --1.0 IT01653 5°C --0.1 7 Ta= 7 C 25° 5 C --25° 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A VBE(sat) -- IC --10 --1.0 IT01655 2 Ta= --25°C 7 75°C 25°C 3 2 2 [NPN] 2 0.1 7 5 5°C 7 Ta= 3 2 °C 25 C --25° 2 3 5 7 2 0.1 3 3 5 7 --0.1 2 3 Collector Current, IC -- A 5 7 --1.0 IT01657 5 VCE(sat) -- IC 7 1.0 IT01654 [NPN] IC / IB=50 5 3 2 0.1 5°C 7 7 Ta= 5 C 25° C --25° 3 2 2 3 5 7 2 0.1 3 5 VBE(sat) -- IC 10 7 1.0 IT01656 [NPN] IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 7 100 IT01652 IC / IB=20 Collector Current, IC -- A [PNP] 5 3 3 0.01 0.01 7 IC / IB=50 7 --0.1 --0.01 2 VCE(sat) -- IC 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 5 5 7 10 7 3 --1.0 3 Collector Current, IC -- A [PNP] 5 2 2 5 0.01 0.01 7 IC / IB=50 --0.01 --0.01 5 7 1.0 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 3 1.0 IC / IB=20 5 2 Collector-to-Base Voltage, VCB -- V [PNP] 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 5 7 --0.1 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V [NPN] f=1MHz 7 7 7 Cob -- VCB [PNP] f=1MHz 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 IT01658 No. 8205-4/8 CPH5517 ASO 5 [PNP / NPN] Collector Current, IC -- A s IC=1A 1.0 7 5 10 m DC 3 0.1 7 5 2 10 s s op ati on Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) For PNP, minus sign is omitted 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V [PNP / NPN] 1.2 0m er 2 3 s s 0μ 0μ 10 50 1m 2 Collector Dissipation, PC -- W 3 PC -- Ta 1.4 ICP=3A 1.0 M ou 0.9 nte do 0.8 na ce ram ic 0.6 bo ard (60 0m 0.4 m2 ×0 .8m 0.2 m) 1u nit 0 3 5 7 IT09272 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01660 No. 8205-5/8 CPH5517 Embossed Taping Specification CPH5517-TL-E No. 8205-6/8 CPH5517 Outline Drawing CPH5517-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. 8205-7/8 CPH5517 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. 8205-8/8