Download Bipolar Transistor 50V, 2A PNP TP/TP-FA

2SB1201/2SD1801
Ordering number : EN2112C
SANYO Semiconductors
DATA SHEET
2SB1201/2SD1801
PNP/NPN Epitaxial Planar Silicon Transistor
High-Current Switching
Applications
Applications
•
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
•
•
•
• Large current capacitance and wide ASO
Adoption of FBET, MBIT processes
• Fast switching speed
Low collector-to-emitter saturation voltage
Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller
Specifications ( ): 2SB1201
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Unit
(--)60
V
(--)50
V
(--)6
V
(--)2
A
(--)4
A
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
1.5
5.5
4
0.5
1
2
2.3
0.8
1
7.5
0.8
1.6
0.6
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2.3
2
3
0 to 0.2
0.6
0.5
3
2.5
0.85
0.85
0.7
2SB1201S-TL-E
2SB1201T-TL-E
2SD1801S-TL-E
2SD1801T-TL-E
1.2
1.5
7.0
5.5
4
2.3
6.5
5.0
2SB1201S-E
2SB1201T-E
2SD1801S-E
2SD1801T-E
0.5
7.0
2.3
6.5
5.0
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
SANYO : TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
Packing Type (TP-FA) : TL
Electrical Connection
2,4
B1201
RANK
LOT No.
2,4
D1801
RANK
1
LOT No.
1
TL
2SB1201
3
2SD1801
3
http://semicon.sanyo.com/en/network
60612 TKIM TB-00000906, TA-4180/10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112-1/10
2SB1201/2SD1801
Continued from preceding page.
Parameter
Symbol
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Tc=25°C
Unit
0.8
W
15
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE1
Emitter Cutoff Current
DC Current Gain
hFE2
Gain-Bandwidth Product
fT
Cob
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Ratings
Conditions
min
typ
VCB=(--)50V, IE=0A
(--)100
nA
VEB=(--)4V, IC=0A
(--)100
nA
VCE=(--)2V, IC=(--)100mA
100*
VCE=(--)2V, IC=(--)1.5A
VCE=(--)10V, IC=(--)50mA
40
560*
150
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
VCE(sat)
VBE(sat)
Unit
max
MHz
(22)12
pF
(--0.3)0.15
(--0.7)0.4
V
(--)0.9
(--)1.2
V
VCE=(--)1A, IC=(--)50mA
IC=(--)10μA, IE=0A
(--)60
V
IC=(--)1mA, RBE=∞
(--)50
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
(--)6
tstg
tf
See specified Test Circuit.
V(BR)CBO
V(BR)CEO
V
60
ns
(450)550
ns
30
ns
* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
IB1
PW=20μs
D.C.b1%
INPUT
OUTPUT
IB2
VR
RB
RL
25Ω
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=25V
IC=10IB1= --10IB2=500mA, VCC=25V
For PNP, the polarity is reversed.
Ordering Information
Package
Shipping
2SB1201S-E
Device
TP
500pcs./bag
2SB1201T-E
TP
500pcs./bag
2SD1801S-E
TP
500pcs./bag
2SD1801T-E
TP
500pcs./bag
2SB1201S-TL-E
TP-FA
700pcs./reel
2SB1201T-TL-E
TP-FA
700pcs./reel
2SD1801S-TL-E
TP-FA
700pcs./reel
2SD1801T-TL-E
TP-FA
700pcs./reel
memo
Pb Free
No.2112-2/10
2SB1201/2SD1801
IC -- VCE
--2.4
Collector Current, IC -- A
--5
0m
A
Collector Current, IC -- A
--20
--10mA
--1.2
--8mA
--6mA
--0.8
--4mA
--2mA
--0.4
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE -- V
--2mA
--1mA
--200
0
0.8
4mA
2mA
IB=0
0
IB=0
0
--2
--4
--6
--8
--10
2.0
2.4
ITR09145
2SD1801
5mA
4mA
3mA
600
2mA
400
1mA
IB=0
0
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE -- V ITR09147
IC -- VBE
IC -- VBE
2.4
2SB1201
VCE= --2V
2SD1801
VCE=2V
--1.6
--1.2
--0.8
--0.4
0
--0.2
--0.4
--0.6
1.2
0.8
0.4
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
1.6
Ta=
7
25° 5°C
C
--25°
C
Collector Current, IC -- A
2.0
Ta=
75
25°C °C
--25°
C
Collector Current, IC -- A
1.6
7mA
6mA
800
0
--12
--2.0
0
--1.2
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
ITR09148
2SD1801
VCE=2V
7
5
Ta=75°C
3
2
DC Current Gain, hFE
5
1.2
ITR09149
hFE -- IC
1000
2SB1201
VCE= --2V
7
DC Current Gain, hFE
1.2
200
--2.4
25°C
--25°C
100
7
3
100
7
5
3
3
5 7 --0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
ITR09150
Ta=75°C
25°C
--25°C
2
5
2
0.8
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V ITR09146
0
0.4
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
--3mA
--400
8mA
1000
--4mA
--600
1.2
1200
--5mA
--800
15mA
ITR09144
2SB1201
--7mA
--6mA
--1000
1.6
0
--2.4
IC -- VCE
--1200
25mA
0.4
IB=0
0
0mA
4
2.0
mA
--1.6
2SD1801
A
50m
--2.0
0
IC -- VCE
2.4
2SB1201
2
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
ITR09151
No.2112-3/10
2SB1201/2SD1801
f T -- IC
1000
5
3
2
100
7
5
3
2
10
--10
2
3
5
7 --100
2
3
5
7 --1000
2
Collector Current, IC -- A
5
3
2
2
3
5
7 100
2
3
5
7 1000
3
2
10
2
3
ITR09153
Cob -- VCB
2SD1801
f=1MHz
7
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7
100
5
5
3
2
10
7
5
--1.0
2
3
5
7
2
--10
3
5
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
--100
7
25
5
°C
C
75°
Ta=
°C
--25
3
2
5
7 --0.01
2
3
5
7 --0.1
2
3
5
Collector Current, IC -- A
VBE(sat) -- IC
--10
2
25°C
7
75°C
5
5
7 --0.01
2
3
5
7 --0.1
2
3
5
Collector Current, IC -- A
7 --1.0
2
7
2
10
3
3
ITR09158
5
7 100
ITR09155
VCE(sat) -- IC
5
3
2
100
7
5
25
3
°C
C
Ta=75°
2
--25°
5
7 0.01
2
3
5
C
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
ITR09157
VBE(sat) -- IC
2SD1801
IC / IB=20
7
3
Ta= --25°C
5
10
5
--1.0
3
2SD1801
IC / IB=20
7
10
7 --1.0
2 3
ITR09156
2SB1201
IC / IB=20
7
2
Collector-to-Base Voltage, VCB -- V
1000
2SB1201
IC / IB=20
7
5
1.0
7 --100
ITR09154
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
100
Collector Current, IC -- A
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
10
2SB1201
f=1MHz
7
3
3
10
3
100
--10
5
ITR09152
Cob -- VCB
2
2SD1801
VCB=10V
7
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, f T -- MHz
7
f T -- IC
1000
2SB1201
VCB=10V
5
3
2
1.0
25°C
Ta= --25°C
7
75°C
5
3
5
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
ITR09159
No.2112-4/10
2SB1201/2SD1801
ASO
5
tio
°C
25
nT
a=
25
°C
0.1
7
5
ms
op
era
2
10 0
3
c=
nT
tio
DC
era
op
Collector Current, IC -- A
s
10m
DC
1.0
7
5
2SB1201 / 2SD1801
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
3
2
2
3
5
1.0
2
3
5
7
10
Collector Dissipation, PC -- W
14
2
0.01
2SB1201 / 2SD1801
15
s
3
PC -- Ta
16
1m
12
Id
ea
lh
10
ea
td
iss
8
ip
2
3
5 7 100
ITR09160
io
6
n
4
2
Collector-to-Emitter Voltage, VCE -- V
at
0.8
0
No heat sink
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR09161
No.2112-5/10
2SB1201/2SD1801
Taping Specification
2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E
No.2112-6/10
2SB1201/2SD1801
Outline Drawing
Land Pattern Example
2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E
Mass (g) Unit
0.282 mm
* For reference
Unit: mm
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No.2112-7/10
2SB1201/2SD1801
Bag Packing Specification
2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E
No.2112-8/10
2SB1201/2SD1801
Outline Drawing
2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E
Mass (g) Unit
0.315 mm
* For reference
No.2112-9/10
2SB1201/2SD1801
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No.2112-10/10