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STN1NF20
N-channel 200 V, 1.1 Ω, 1 A SOT-223
STripFET™ II Power MOSFET
Features
Order code
VDSS
RDS(on) max
ID
STN1NF20
200 V
< 1.5 Ω
1A
■
100% avalanche tested
■
Low gate charge
■
Exceptional dv/dt capability
4
1
2
3
SOT-223
Applications
■
Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET™ process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STN1NF20
1NF20
SOT-223
Tape and reel
November 2011
Doc ID 022321 Rev 1
1/12
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12
Contents
STN1NF20
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
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STN1NF20
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 20
V
ID
Drain current continuous Tamb = 25 °C
1
A
ID
Drain current continuous Tamb = 100 °C
1
A
IDM (1)
Drain current pulsed
4
A
PTOT
Total dissipation at Tamb = 25 °C
2
W
Peak diode recovery voltage slope
10
V/ns
-55 to 150
°C
Value
Unit
62.50
°C/W
dv/dt
(2)
Tj
Tstg
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area.
2. Isd ≤1 A, di/dt ≤200 A/µs, VDD ≤80% V(BR)DSS.
Table 3.
Thermal data
Symbol
Rthj-amb
Table 4.
Parameter
Thermal resistance junction to ambient
Thermal data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive(1)
1
A
EAS
Single pulse avalanche energy (2)
70
mJ
1. Pulse width limited by TJMAX.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
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Electrical characteristics
2
STN1NF20
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
VDS = 200 V
Zero gate voltage
drain current (VGS = 0) VDS = 200 V, TC=125 °C
IGSS
Gate-body leakage
current
Gate threshold voltage VGS = VDS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Symbol
Min.
Typ.
Max.
200
Unit
V
1
50
µA
µA
±100
nA
3
4
V
1.1
1.5
Ω
Min.
Typ.
Max.
Unit
-
pF
pF
pF
VGS = ± 20 V, VDS=0
VGS(th)
Table 6.
2
VGS = 10 V, ID = 0.5 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
90
30
4
Rg
Instrinsic gate
resistance
f=1 MHz open drain
-
4.8
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 160 V, ID = 1 A,
VGS = 10 V
(see Figure 14)
-
5.7
1.1
3.0
-
nC
nC
nC
Ciss
Coss
Crss
4/12
On /off states
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STN1NF20
Electrical characteristics
Table 7.
Symbol
td(v)
tr
tf
tc(off)
Switching times
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 8.
Symbol
Parameter
ISDM (1)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
VDD = 100 V, ID = 0.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
Min.
Typ.
Max
Unit
-
4
5.6
12.4
15.8
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
-
1
4
A
A
-
1.6
V
Source drain diode
Source-drain current
Source-drain current
(pulsed)
ISD
trr
Qrr
Test conditions
Test conditions
ISD = 1 A, VGS = 0
Reverse recovery time
ISD = 1 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 20 V
Reverse recovery current (see Figure 15)
-
51.8
90.7
3.5
ns
nC
A
Reverse recovery time
ISD = 1 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 20 V, Tj = 150 °C
Reverse recovery current (see Figure 15)
-
58.0
106.7
3.7
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
STN1NF20
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM10378v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
is
ea )
ar S(on
D
R
ax
1
s
i
th
in
n m
io
at by
r
pe ed
O mit
Li
0.1
10µs
100µs
1ms
10ms
0.01
0.001
0.1
Figure 4.
10
1
VDS(V)
100
Output characteristics
AM10379v1
ID
(A)
VGS=10V
5
7V
4
VDS=20V
5
4
3
6V
3
2
2
1
5V
0
0
Figure 6.
AM10380v1
ID
(A)
4
8
12
16
VDS(V)
Normalized BVDSS vs temperature
AM10381v1
BVDSS
(norm)
ID=1mA
1.10
1
0
0
Figure 7.
RDS(on)
(Ω)
2
4
8
6
VGS(V)
Static drain-source on resistance
AM10382v1
VGS=10V
1.16
1.06
1.14
1.02
1.12
0.98
1.10
0.94
0.90
-50 -25
6/12
0
25
50
75
100
TJ(°C)
1.08
0
0.5
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1
ID(A)
STN1NF20
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM10383v1
VGS
(V)
VDS (V)
VDS
12
VDD=160V
ID=1A
Capacitance variations
C
(pF)
AM10384v1
100
Ciss
10
Coss
160
140
10
120
8
100
6
80
60
4
40
2
Crss
20
0
0
2
1
4
3
5
Figure 10. Normalized gate threshold voltage
vs temperature
AM10385v1
VGS(th)
(norm)
1
0.1
0
Qg(nC)
6
1
10
100
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM10386v1
RDS(on)
(norm)
ID=250µA
1.05
2.0
1.00
1.6
0.95
0.90
1.2
0.85
0.8
0.80
0.75
-50 -25
0
25
50
75 100
TJ(°C)
0.4
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
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Test circuits
3
STN1NF20
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
8/12
0
10%
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AM01473v1
STN1NF20
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Package mechanical data
Table 9.
STN1NF20
SOT-223 mechanical data
mm
Dim.
Min.
Typ.
A
Max.
1.80
A1
0.02
0.1
B
0.60
0.70
0.85
B1
2.90
3.00
3.15
c
0.24
0.26
0.35
D
6.30
6.50
6.70
e
2.30
e1
4.60
E
3.30
3.50
3.70
H
6.70
7.00
7.30
V
10°
Figure 19. SOT-223 mechanical data drawing
0046067_M
10/12
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STN1NF20
5
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
04-Nov-2011
1
Changes
First release.
Doc ID 022321 Rev 1
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11/12
STN1NF20
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