Download STL51N3LLH5

STL51N3LLH5
N-channel 30 V, 0.0105 Ω, 51 A, PowerFLAT™ 5x6
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on)
max
ID
STL51N3LLH5
30 V
< 0.0145 Ω
51 A (1)
1. The value is rated according Rthj-pcb
1
■
RDS(on) * Qg industry benchmark
■
Extremely low on-resistance RDS(on)
■
Very low switching gate charge
■
High avalanche ruggedness
■
Low gate drive power losses
2
3
4
PowerFLAT™ 5x6
Applications
■
Figure 1.
Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class.
Internal schematic diagram
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STL51N3LLH5
51N3LLH5
PowerFLAT™ 5x6
Tape and reel
July 2011
Doc ID 022062 Rev 1
1/13
www.st.com
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13
Contents
STL51N3LLH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 8
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STL51N3LLH5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
± 22/-22
V
Drain current (continuous) at TC = 25 °C
51
A
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
ID
(1)
ID (1)
Drain current (continuous) at TC = 100 °C
32.5
A
ID
(2)
Drain current (continuous) at TC = 25 °C
12.6
A
ID
(2)
Drain current (continuous) at TC=100 °C
7.9
A
(3)
Drain current (pulsed)
50.4
A
PTOT (1)
Total dissipation at TC = 25 °C
62.5
W
(2)
Total dissipation at TC = 25 °C
4
W
0.03
W/°C
-55 to 150
°C
Value
Unit
IDM
PTOT
Derating factor
TJ
Operating junction temperature
Storage temperature
Tstg
1. The value is rated according to Rthj-c
2. The value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Table 3.
Thermal resistance
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
2
°C/W
Thermal resistance junction-pcb
31.3
°C/W
Rthj-pcb
(1)
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
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Electrical characteristics
2
STL51N3LLH5
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
Symbol
Parameter
Test conditions
Drain-source breakdown
voltage (VGS= 0)
ID = 250 µA
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 30 V
VDS = 30 V TC=125 °C
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±22/-20 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 6.3 A
VGS= 4.5 V, ID= 6.3 A
V(BR)DSS
Table 5.
Symbol
4/13
On/off states
Min.
Typ.
Max.
30
Unit
V
1
1
10
µA
µA
±100
nA
2.5
V
0.0105 0.0145
0.0145 0.0175
Ω
Ω
Dynamic
Parameter
Test conditions
Min.
Typ.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-
724
132
20
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 12.6 A
VGS =4.5 V
Figure 14
-
5
2
2
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Max.
Unit
-
pF
pF
pF
-
nC
nC
nC
STL51N3LLH5
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7.
Symbol
ISD
Test conditions
VDD=15 V, ID= 6.3 A,
RG=4.7 Ω, VGS= 4.5 V
Figure 13
Min.
Typ.
Max.
Unit
-
4
4.2
2.1
3.5
-
ns
ns
ns
ns
Min
Typ.
Max
Unit
Source drain diode
Parameter
Test conditions
Source-drain current
-
12.6
A
ISDM(1)
Source-drain current (pulsed)
-
50.4
A
VSD(2)
Forward on voltage
ISD = 12.6 A, VGS=0
-
1.1
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12.6 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
-
trr
Qrr
IRRM
21
10
1
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
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Electrical characteristics
STL51N3LLH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM05435v1
ID
(A)
Tj=150°C
Tc=25°C
is
100
on
ti
ra
pe d
O mite
Li
10
ea
ar S(on)
is
th RD
in ax
m
by
Sinlge
pulse
10ms
100ms
1
1s
0.1
0.01
0.1
Figure 4.
10
1
VDS(V)
100
Output characteristics
AM05436v1
ID
(A)
VGS=10V
100
AM05437v1
ID
(A)
VDS=4V
100
80
80
5V
60
60
4V
40
40
20
20
3V
0
0
Figure 6.
1
2
3
4
VDS(V)
Normalized BVDSS vs temperature
AM05438v1
BVDSS
(norm)
0
0
Figure 7.
2
4
8
10 VGS(V)
Static drain-source on resistance
AM05439v1
RDS(on)
(mΩ)
ID=6.3A
VGS=10V
25
1.10
6
20
1.05
15
1.00
10
0.95
0.90
-50 -25
6/13
5
0
25 50
75 100 125 150 TJ(°C)
0
0
2
4
6
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8
10
ID(A)
STL51N3LLH5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM05440v1
VGS
(V)
VDD=15V
ID=12.6A
12
Capacitance variations
AM05441v1
C
(pF)
10000
10
1000
8
6
100
Ciss
Coss
4
10
2
0
0
2
4
6
8
10
1 Crss
0
Qg(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
AM05442v1
VGS(th)
(norm)
1.2
10
100
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM05443v1
RDS(on)
(norm)
2.0
1.0
1.5
0.8
1.0
0.6
0.4
-50 -25
25
0
50 75 100 125 150 TJ(°C)
0.5
-50 -25
0
25 50 75 100 125 150 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM05444v1
VSD
(V)
TJ=-55°C
1.0
0.9
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.5
0.4
0
10
20
30
40
50 ISD(A)
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Test circuits
3
STL51N3LLH5
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
8/13
0
10%
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AM01473v1
STL51N3LLH5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Package mechanical data
Table 8.
STL51N3LLH5
PowerFLAT 5x6 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
1.00
A1
0.02
0.05
A2
b
0.25
0.30
0.50
D
5.20
E
6.15
D2
4.11
4.31
E2
3.50
3.70
e
1.27
L
0.50
0.80
K
1.275
1.575
Figure 19. PowerFLAT 5x6 drawing
Bottom View
Top View
Side View
8231817_Rev_D
10/13
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STL51N3LLH5
Package mechanical data
Figure 20. Recommended footprint
5.35
0.95
0.98
6.26
3.86
4.33
4.41
1.27
0.62
Footprint
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Revision history
5
STL51N3LLH5
Revision history
Table 9.
12/13
Document revision history
Date
Revision
28-Jul-2011
1
Changes
First release
Doc ID 022062 Rev 1
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STL51N3LLH5
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