Download PM800HSA120

MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA120
FLAT-BASE TYPE
INSULATED PACKAGE
A
D
TYP
DD
BB
C
E
R (2 REQD)
AA E
B
X
1 2 3 4 5
W
Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
TYP
Q
Sφ
(4 HOLES)
T
F
φK
CC
φL
V SQ.(5 PLACES)
TYP
φM
H
P
J
G
C
Features:
u Complete Output Power
Circuit
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VI
C
1
Rref
VCC
1.5 OHM
Rfo
TEMP
FO 5
FO
OUT1
SR 2
SR
OUT2
CI
IN
3
VC 4
u Gate Drive Circuit
SENS
GND
C1
300 pf
Tm
AMP
u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
SINK
E
Outline Drawing and Circuit Diagram
Dimensions
A
Inches
Millimeters
Dimensions
Inches
Millimeters
3.94
100.0
Q
0.10
B
5.20
132.0
R
M8 Metric
M8
C
1.33
33.7
S
φ 6.5
φ 6.5
D
3.23±0.010
82.0±0.25
T
0.24
26.0
E
4.33±0.010
110.0±0.25
U
0.26
6.5
F
G
2.84
1.42+0.04/-0.02
2.54
72.0
V
0.25
0.64
36.0+1/-0.5
W
0.20
5.0
H
0.53
13.5
X
1.97
50.0
J
0.06
1.5
AA
0.71
18.0
K
0.17
4.4
BB
0.55
14.0
L
0.15
3.8
CC
0.39
10.0
DD
1.14.
29.0
M
0.06
1.5
N
0.35
9.0
P
0.53
13.5
Applications:
u Inverters
u UPS
u Motion/Servo Control
u Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM800HSA120 is a 1200V,
800 Ampere Intelligent Power Module.
Type
PM
Current Rating
Amperes
VCES
Volts (x 10)
800
120
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol
Ratings
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Case Operating Temperature
TC
-20 to 100
°C
Mounting Torque, M6 Mounting Screws
—
3.92 ~ 5.88
N·m
Mounting Torque, M8 Main Terminal Screws
—
8.83 ~ 10.8
N·m
Power Device Junction Temperature
Module Weight (Typical)
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
—
1170
Grams
VCC(prot.)
800
Volts
Viso
2500
Vrms
Control Sector
Supply Voltage Applied between (V 1-VC)
Input Voltage Applied between (C 1-VC)
Fault Output Supply Voltage (Applied between Fo-Vc)
Fault Output Current (Fault Current of FO Terminal)
VD
20
Volts
VCIN
10
Volts
VFO
20
Volts
IFO
20
mA
VCES
1200
Volts
IC
800
Amperes
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 5V)
Collector Current, (TC = 25°C)
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Peak Collector Current, (TC = 25°C)
ICP
1600
Amperes
Collector Dissipation
PC
4630
Watts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Over Current Trip Level Inverter Part
OC
-20°C ≤ Tj ≤ 125°C, VD = 15V
1060
1300
—
Amperes
Short Circuit Trip Level Inverter Part
SC
-20°C ≤ Tj ≤ 125°C, VD = 15V
1350
1700
—
Amperes
t off(OC)
VD = 15V
—
5
—
µs
OT
Trip Level
100
110
120
°C
OTr
Reset Level
85
95
105
°C
UV
Trip Level
11.5
12.0
12.5
Volts
Control Sector
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under Voltage Protection
Supply Voltage
Circuit Current
UV r
Reset Level
—
12.5
—
Volts
VD
Applied between V1-VC
13.5
15
16.5
Volts
ID
VD = 15V, VCIN = 5V, V1-VC
—
23
40
mA
Input ON Threshold Voltage
VCIN(on)
Applied between C1-VC
1.2
1.5
1.8
Volts
Input OFF Threshold Voltage
VCIN(off)
Applied between C1-VC
1.7
2.0
2.3
Volts
PWM Input Frequency
f PWM
3-φ Sinusoidal
—
15
20
kHz
Fault Output Current
IFO(H)
VD = 15V, VFO = 15V
—
—
0.01
mA
IFO(L)
VD = 15V, VFO = 15V
—
10
15
mA
Minimum Fault Output Pulse Width
tFO
VD = 15V
1.0
1.8
—
ms
SR Terminal Output Voltage
VSR
-20°C ≤ Tj ≤ 125°C, Rin = 6.8kΩ
4.5
5.1
5.6
Volts
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Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector Cutoff Current
Emitter-Collector Voltage
Collector-Emitter Saturation Voltage
ICES
VCE = VCES, Tj = 25°C
—
—
1.0
mA
VCE = VCES, Tj = 125°C
—
—
10
mA
VEC
-IC = 800A, VD = 15V, VCIN = 5V
—
2.6
3.5
Volts
VCE(sat)
VD = 15V, VCIN = 0V, IC = 800A,
—
2.5
3.5
Volts
—
2.3
3.3
Volts
0.5
1.4
2.5
µs
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 800A,
Tj = 125°C
Inductive Load Switching Times
ton
trr
VD = 15V, VCIN = 0 ↔ 5V
—
0.2
0.4
µs
tC(on)
VCC = 600V, IC = 800A
—
0.4
1.0
µs
toff
Tj = 125°C
—
3.0
4.0
µs
—
0.6
1.1
µs
tC(off)
Thermal Characteristics
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Units
Junction to Case Thermal Resistance
Rth(j-c)Q
Each IGBT
—
—
0.027
°C/Watt
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Contact Thermal Resistance
Rth(j-c)F
Each FWDi
—
—
0.045
°C/Watt
Rth(c-f)
Case to Fin Per Module,
—
—
0.022
°C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Symbol
Condition
Value
Units
Supply Voltage
VCC
Applied across C1-E2 Terminals
0 ~ 800
Volts
VD
Applied between V1-VC
15 ± 1.5
Volts
Input ON Voltage
VCIN(on)
Applied between C1-VC
0 ~ 0.8
Volts
Input OFF Voltage
VCIN(off)
Applied between C1-VC
4.0 ~ VSR
Volts
PWM Input Frequency
f PWM
Using Application Circuit
5 ~ 20
kHz
Minimum Dead Time
tdead
Input Signal
≥ 4.0
µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA120
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR-EMITTER
SATURATON VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
1.0
VD = 15V
VCIN = 0V
Tj = 25°C
Tj = 125°C
0
2.0
1.0
IC = 800A
VCIN = 0V
Tj = 25°C
Tj = 125°C
200
400
600
800
1000
Tj = 25oC
VCIN = 0V
VD = 17V
15
600
13
400
200
0
0
0
0
13
15
0
17
1.0
2.0
3.0
COLLECTOR CURRENT, IC, (AMPERES)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCEsat, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
101
101
VCC = 600V
VD = 15V
Inductive Load
Tj = 25°C
Tj = 125°C
103
Irr
REVERSE RECOVERY TIME, trr, (µs)
toff
SWITCHING TIMES, tc(on), tc(off), (µs)
101
SWITCHING TIMES, ton, toff, (µs)
800
COLLECTOR CURRENT, IC, (AMPERES)
2.0
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
SATURATION VOLTAGE, VCE(sat), (VOLTS)
3.0
OUTPUT CHARACTERISTICS
(TYPICAL)
102
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ton
100
VCC = 600V
VD = 15V
Inductive Load
Tj = 25°C
Tj = 125°C
10-1
102
103
103
COLLECTOR CURRENT, IC, (AMPERES)
100
tc(off)
tc(on)
10-1
101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
100
trr
10-1
10-2
102
VCC = 600V
VD = 15V
Inductive Load
Tj = 25°C
Tj = 125°C
103
101
100
104
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
SATURATON VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
COLLECTOR REVERSE CURRENT,-IE, (AMPERES)
103
VD = 15V
VCIN = 5V
Tj = 25°C
Tj = 125°C
102
101
0
1.0
2.0
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM800HSA120
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.027°C/W
10-3
10-3
10-2
10-1
100
10 1
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
101
100
10-1
10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.045°C/W
10-3
10-3
10-2
TIME, (s)
100
10 1
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OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
1.4
OVER CURRENT TRIP LEVEL % (NORMALIZED)
Tj = 25°C
1.0
0.8
0
0
13
15
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE DEPENDENCY (TYPICAL)
1.2
OVER CURRENT TRIP LEVEL % (NORMALIZED)
10-1
TIME, (s)
17
SUPPLY VOLTAGE, VD, (VOLTS)
1.2
1.0
0.8
VD = 15V
0
20
100
JUNCTION TEMPERATURE, Tj, (°C)
180
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
1.2
1.0
0.8
VD = 15V
0
20
100
180
JUNCTION TEMPERATURE, Tj, (°C)
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDANCY
(TYPICAL)
UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS)
15
VD = 15V
UVt
UVr
13
11
0
20
100
180
JUNCTION TEMPERATURE, Tj, (°C)
Sep.2000